Avalanche Diode UV

Avalanche Diode UV, Total:71 items.

The international standard classification for "Avalanche Diode UV" includes: Optoelectronics. Laser equipment , Electrical and electronic equipment , Diodes , Other standards related to insulation .

The Chinese standard classification for "Avalanche Diode UV" includes: Optical communication equipment , Technical management , Electronic and electrical equipment , Power semiconductor device and parts , Lightning arrester , Semiconductor diode .

Professional Standard - Post and Telecommunication

YD/T 0835-1996 Avalanche photodiode detection method
YD/T 835-1996 Test Method of Avalanche Photodiodes

Professional Standard - Military and Civilian Products

WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes
WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes

Professional Standard - Electron

SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
SJ 2354.8-1983 Method of measurement for pulse rise time and fall time of PIN and avalanche photodiodes
SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes

Guizhou Provincial Standard of the People's Republic of China

DB52/T 861-2013 Detail specification for 2CB003 type silicon avalanche rectifier diode

Professional Standard - Automobile

QC/T 706-2004 Technical specification of silicon avalanche rectification for motor vehicles

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A
GB/T 18802.321-2007 Components for low-voltage surge protective devices—Part 321:Specifications for avalanche breakdown diode(ABD)
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle

Fujian Provincial Standard of the People's Republic of China

DB35/T 2107-2022 Ultraviolet light-emitting diode evaluation method

Group Standards of the People's Republic of China

T/JSQA 198-2024 Ultraviolet diode (UV-LED) drinking water steriliser

Professional Standard - Light Industry

QB/T 5478-2020 LED-UV curing offset ink

British Standards Institution (BSI)

BS 9300 C476:1973 Detail specification for silicon avalanche rectifier diode
BS 9300 C667-668:1971 Detail specification for silicon avalanche rectifier diodes
BS EN 61643-321:2002 Low voltage surge protective devices - Specifications for avalanche breakdown diode (ABD)
BS QC 750001:1986 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes

Gosstandart of Russia

GOST R 70786-2023 Avalanche pulse semiconductor diodes. Parameter system

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD210-2007 Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors
JEDEC JESD210A-2017 Avalanche Breakdown Diode (ABD) Transient Voltage Suppressors

International Electrotechnical Commission (IEC)

PQC 75-1991 Semiconductor Devices - Discrete Devices - Rectifier Diodes Blank Detail Specification: Rectifier Diodes (Including Avalanche Rectifier Diodes)@ Ambient and Case-Rated@ Greater Than 100 A
IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
IEC 61643-321:2001 Components for low-voltage surge protection devices - Part 321: Specifications for Avalanche Breakdown Diode (ABD)
IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

Bureau of Indian Standards

IS/QC 750108-1992 Semiconductor Devices - Discrete Devices Rectifier Diodes Blank Detail Rectifier Diodes ( Including Avalanche Recti6er Diodes ), Ambient and Case-Rated, Up to 100 A

Japanese Industrial Standards Committee (JISC)

JIS C 5381-321:2004 Components for low-voltage surge protective devices -- Specifications for avalanche breakdown diode (ABD)

Association Francaise de Normalisation

NF EN 61643-321:2002 Components for low-voltage surge arresters - Part 321: Specifications for avalanche diodes (ABD)
NF C61-743-321*NF EN 61643-321:2002 Components for low-voltage surge protective devices - Part 321 : specifications for avalanche breackdown diode (ABD)

Korean Agency for Technology and Standards (KATS)

KS C IEC 61643-321-2006(2019) Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)
KS C IEC 60747-3-1:2006 Semiconductor devices － Discrete devices － Part 3: Signal (including switching) and regulator diodes － Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 61643-321-2006(2024) Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)
KS C IEC 60747-2-1-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 60747-2-1-2006(2021) Semiconductor devices － Discrete devices － Part 2: Rectifier diodes － Section one: Blank detail specification for rectifier diodes(including avalanche rectifier diodes), ambient and case-rated, up to 100 A
KS C IEC 61643-321-A-2015 Components for low-valtage surge protective devices — Part 321: Specification for avalanche breakdown diode(ABD)
KS C IEC 61643-321-A:2014 Components for low-valtage surge protective devices — Part 321: Specification for avalanche breakdown diode(ABD)
KS C IEC 61643-321-A-2014 Components for low-valtage surge protective devices — Part 321: Specification for avalanche breakdown diode(ABD)
KS C IEC 61643-321-2019 Components for low－voltage surge protective devices－Part 321：Specifications for avalanche breakdown diode(ABD)
KS C IEC 60747-2-2-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2-2006(2016) Semiconductor devices － Discrete devices － Part 2: Rectifier diodes － Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-1-2021 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C IEC 60747-3-1-2021 Semiconductor devices － Discrete devices － Part 3: Signal (including switching) and regulator diodes － Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3-1-2006(2021) Semiconductor devices － Discrete devices － Part 3: Signal (including switching) and regulator diodes － Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C IEC 60747-3-1-2006(2016) Semiconductor devices － Discrete devices － Part 3: Signal (including switching) and regulator diodes － Section one: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod

Danish Standards Foundation

DS/EN 61643-321:2007 Components for low-voltage surge protective devices -- Part 321: Specifications for avalanche breakdown diode (ABD)
DANSK DS/EN 61643-321:2007 Components for low-voltage surge protective devices -- Part 321: Specifications for avalanche breakdown diode (ABD)

GB-REG

REG NASA-LLIS-1840--2006 Lessons Learned - CALIPSO Avalanche Photodiode (APD) Detector Assembly Electrical Failure

Spanish Association for Standardization (UNE)

UNE-EN 61643-321:2003 Components for low-voltage surge protective devices -- Part 321: Specifications for Avalanche Breakdown Diode (ABD).
AENOR UNE-EN 61643-321:2003 Components for low-voltage surge protective devices — Part 321: Specifications for Avalanche Breakdown Diode (ABD).

South African Bureau of Standard

SANS 61643-321:2004 Components for low-voltage surge protective devices Part 321: Specification for avalanche breakdown diode (ABD)

Comitato Elettrotecnico Italiano

CEI EN 61643-321:2003 Components for low-voltage surge protection devices - Part 321: Specifications for Avalanche Breakdown Diode (ABD)

The Directorate General of Specifications and Metrology (DGSM)

OS GSO IEC 61643-321:2014 Components for low-voltage surge protective devices - Part 321: Specifications for avalanche breakdown diode (ABD)

German Institute for Standardization

DIN EN 61643-321:2003 Components for low-voltage surge protection devices - Part 321: Specifications for avalanche breakdown diodes (ABD) (IEC 61643-321:2001); German version EN 61643-321:2002

Swedish Institute for Standards

SS-EN 61643-321:2002 Components for low-voltage surge protection devices - Part 321: specifications for avalanche breakdown diode (ABD)

Thai Industrial Standards Institute (TISI)

TIS 1970-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section one-blank detail specification for signal diodes,switching diodes and controlled-avalanchediodes
TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a

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