Crystalline detection

Crystalline detection, Total:83 items.

The international standard classification for "Crystalline detection" includes: Advanced ceramics , Semiconducting materials .

The Chinese standard classification for "Crystalline detection" includes: Radio Measurement , Optical Measurement , Thermal Measurement , Special ceramics , Semimetal and semiconductor material in general .

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04018-1988 BJ2901 Bipolar Transistor Reverse Breakdown Voltage Standard Instrument Trial Verification Regulations
JJG(电子) 04015-1988 QZ3, QZ4 type high-frequency low-power transistor NF tester trial verification regulations
JJG(电子) 04048-1995 QG-29 high-frequency transistor Gf (Kf), F (Nf), AGC tester verification regulations
JJG(电子) 04010-1987 BJ2961 Transistor Integrated Circuit Dynamic Parameter Tester Trial Verification Regulations
JJG 28-2000 Verification Regulation of plane Optical Flat
JJG(电子) 04026-1989 BJ2985 type crystal triode maintenance voltage tester verification regulations
JJG(电子) 04012-1987 BJ3022 (QJ30) type low-frequency high-power transistor F _t tester trial verification regulations
JJG(电子) 04004-1987 BJ2911 (HQ-1B) Transistor Comprehensive Parameter Tester Trial Verification Regulations
JJG(电子) 04047-1995 QG-6, QG-16 high-frequency low-power transistor ft parameter tester verification regulations
JJG(电子) 310007-2006 Speciation for verification of DC parameter testing system for isolated gate bipolar transistors
JJG(电子) 04007-1987 BJ2950A (JS-4A) Transistor Working Voltage Tester Trial Verification Regulations
JJG(电子) 04056-1995 QO5-C type transistor switch safe working area device verification regulations
JJG(电子) 04001-1987 Trial specification for verification of JS-2C model transistor reverse cut-off current testers
JJG(电子) 04016-1988 BJ2984 (QR-3) Trial Verification Regulations for Transient Thermal Resistance Tester of Crystal Transistor
JJG 516-1987 Model BJ2920 (HQ2) Digital DC Characterization Tester for Bipolor Transiste
JJG(电子) 04045-1995 Verification Regulations for JS-7B Transistor Tester
JJG(电子) 04011-1987 Trial specification for verification of QG21-QG25 high frequency low-power transistor F testers
JJG(电子) 04052-1995 Verification rules for PTQ-2 transistor rapid screening instrument
JJG(电子) 04003-1987 BJ2952A (JS-3A) Transistor Reverse Breakdown Voltage Tester Trial Verification Regulations
JJG(电子) 04005-1987 JSS-4A Transistor Low Frequency H Parameter Tester Trial Verification Regulations
JJG(电子) 04046-1995 Verification regulations for QC-13 type field effect transistor transconductance parameter tester
JJG(电子) 04009-1987 BJ2983 type crystal triode forward-biased secondary breakdown tester trial verification regulations
JJG 809-1993 Digital Temperature Indicators with Quarze Crystal Sensors
JJG(电子) 15003-1988 3280 type radio frequency crystal marker signal generator trial verification regulations

Professional Standard - Electron

SJ 20230-1993 Verification regulation of model BJ2951A(JS-5A) transistor Hfe tester
SJ/T 11832.3-2022 Thin LCD Box Part 3: Detection Method
SJ/T 11501-2015 Test method for determining crystal type of monocrystalline silicon carbide
SJ/T 31108-1994 Requirements of readiness and methods of inspection and assessment for CG3000 mono-crystal furnaces
SJ/T 31065-1994 Requirements of readiness and methods of inspection and assessment for Type 24 NC wafer buffing machines

Group Standards of the People's Republic of China

T/CZSBDTHYXH 001-2023 Wafer defects Automatic optical inspection equipment
T/IAWBS 008-2019 Experimental method for residual stress in SiC wafers
T/ZSA 38-2020 Experimental method for residual stress in SiC wafers
T/SCBDIF 002-2023 LCD panel manufacturing process defect detection method
T/SZBSIA 007-2022 Semiconductor die bonder test specification
T/SZBSIA 005-2022 LED Die bonder test
T/CRRA 1313-2023 Technical specification for reuse testing of retired liquid crystal display cell
T/XAI 12-2021 The method for electrical testing of COF tape

National Metrological Technical Specifications of the People's Republic of China

JJF(电子) 21-1982 Verification Method of JT-l Transistor Characteristic Graphic Instrument
JJF(电子) 20-1982 Verification method of CR1A transistor digital ohmmeter

Professional Standard - Ferrous Metallurgy

YB/T 4290-2012 Test Methods for Estimating the Largest Grain Observed in a Metallographic Section (ALA Grain Size)

Professional Standard - Building Materials

JC/T 2151-2012 Test method for ceramic whiskers morphology

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 26066-2010 Practice for shallow etch pit detection on silicon

Hubei Provincial Standard of the People's Republic of China

DB42/ 204-2001 Ultrasonic examination for in-service man-made crystal autoclave

Shaanxi Provincial Standard of the People's Republic of China

DB61/T 1163-2018 Eddy current inspection rules for in-service artificial crystal kettles
DB61/T 450-2017 Ultrasonic testing rules for artificial crystal kettles in service

Taiwan Provincial Standard of the People's Republic of China

CNS 3997-1989 Method of Test for Transistors

未注明发布机构

DIN 51798 E:2017-10 Testing of liquid fuels - Determination of the crystallization point of pure benzene

Yunnan Provincial Standard of the People's Republic of China

DB53/T 419-2012 Ultrasonic testing rules for in-use ultra-high pressure crystal kettles

中国石油化工总公司

SH/T 2003-1991 Ammonia evaporation type tube crystallizer quality grade assessment and inspection details

Korean Agency for Technology and Standards (KATS)

KS M 1936-2002 Benzene-Determination of crystallizing point
KS D 0261-2012(2017) Visual inspection for silicon wafers with specular surfaces
KS C IEC 61747-6:2005 Liquid crystal display devices－Part 6：Measuring methods for liquid crystal modules－Transmissive type

International Organization for Standardization (ISO)

IWA 43:2023 Glass types — Crystal glass, crystal and lead crystal — Specifications and test methods
PRF IWA 43:2023 Glass types — Crystal glass, crystal and lead crystal — Specifications and test methods

YU-JUS

JUS C.A5.062-1989 Metals tests. Determination of resistance to intergranular conosion by Monypenny Strauss test

HU-MSZT

MSZ 8626-1966 Detection method of austenite grain boundaries in steel

British Standards Institution (BSI)

BS EN 61747-30-1:2012 Liquid crystal display devices. Measuring methods for liquid crystal display modules. Transmissive type

German Institute for Standardization

DIN 51798:2005 Testing of liquid fuels - Determination of the crystallization point of pure benzene
DIN EN 13925-3:2005-07 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments; German version EN 13925-3:2005
DIN 51798:2018 Testing of liquid fuels - Determination of the crystallization point of pure benzene
DIN EN 13925-2:2003-07 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 2: Procedures; German version EN 13925-2:2003
DIN EN 13925-1:2003-07 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 1: General principles; German version EN 13925-1:2003

Danish Standards Foundation

DS/EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
DS/EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
DS/EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles
DS/EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials

SCC

DANSK DS/EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
DANSK DS/EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
NS-EN 13925-2:2003 Non-destructive testing — X-ray diffraction from polycrystalline and amorphous materials — Part 2: Procedures
AENOR UNE-EN 13925-3:2006 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
NS-EN 13925-3:2005 Non destructive testing — X ray diffraction from polycrystalline and amorphous materials — Part 3: Instruments
NS-EN 1330-11:2007 Non-destructive testing — Terminology — Terms used in X-ray diffraction from polycrystalline and amorphous materials
AENOR UNE-EN 1330-11:2008 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
DANSK DS/EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
AENOR UNE-EN 13925-1:2006 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles

AENOR

UNE-EN 13925-2:2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
UNE-EN 13925-3:2006 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments

Lithuanian Standards Office

LST EN 13925-3-2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
LST EN 13925-2-2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
LST EN 1330-11-2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials

Association Francaise de Normalisation

NF EN 1330-11:2007 Non-destructive testing - Terminology - Part 11: X-ray diffraction of polycrystalline and amorphous materials

European Committee for Standardization (CEN)

EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures

RU-GOST R

GOST 27264-1987 Power bipolar transistors. Measurement methods