Depth Analysis Method in Electron Spectroscopy
Depth Analysis Method in Electron Spectroscopy, Total:25 items.
The international standard classification for "Depth Analysis Method in Electron Spectroscopy" includes: Chemical analysis .
The Chinese standard classification for "Depth Analysis Method in Electron Spectroscopy" includes: Basic standards and general methods .
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 32495-2016 Surface chemical analysis—Secondary-ion mass spectrometry—Method for depth profiling of arsenic in silicon
- GB/T 40109-2021 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
- GB/T 41064-2021 Surface chemical analysis—Depth profiling—Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
- GB/T 34326-2017 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
Professional Standard - Electron
- SJ/T 10457-1993 Standard guide for depth profiling in auger electron spectroscopy
International Organization for Standardization (ISO)
- ISO 16531:2013 Surface chemical analysis - Depth profiling - Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
- ISO 17109:2015 Surface chemical analysis - Depth profiling - Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
- ISO 12406:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of arsenic in silicon
- ISO 17109:2022 Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth p
- ISO 17109:2015/DAmd 1 Surface chemical analysis — Depth profiling — Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films — A...
British Standards Institution (BSI)
- BS ISO 17109:2015 Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films
- BS ISO 16531:2013 Surface chemical analysis. Depth profiling. Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
- BS ISO 17109:2022 Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter dept profiling using single and multi-layer thin…
- 21/30433862 DC BS ISO 17109 AMD1. Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy, Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and…
- BS ISO 12406:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
- 10/30199169 DC BS ISO 12406. Surface chemical analysis. Secondary ion mass spectrometry. Method for depth profiling of arsenic in silicon
- 12/30241146 DC BS ISO 16531. Surface chemical analysis. Depth profiling. Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
- BS ISO 16531:2020 Surface chemical analysis. Depth profiling. Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
- 19/30399949 DC BS ISO 16531. Surface chemical analysis. Depth profiling. Methods for ion beam alignment and the associated measurement of current or current density for depth profiling in AES and XPS
- BS ISO 22415:2019 Surface chemical analysis. Secondary ion mass spectrometry. Method for determining yield volume in argon cluster sputter depth profiling of organic materials
American Society for Testing and Materials (ASTM)
- ASTM E1127-24 Standard Guide for Depth Profiling in Auger Electron Spectroscopy
- ASTM E1127-03 Standard Guide for Depth Profiling in Auger Electron Spectroscopy
GCC Standardization Organization
- GSO ISO 11505:2015 Surface chemical analysis -- General procedures for quantitative compositional depth profiling by glow discharge optical emission spectrometry
Japanese Industrial Standards Committee (JISC)
- JIS K 0164:2023 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon
Kingdom of Bahrain Testing and Metrology Directorate
- BH GSO ISO 17560:2016 Surface chemical analysis -- Secondary-ion mass spectrometry -- Method for depth profiling of boron in silicon
