Molybdenum telluride phototransistor
Molybdenum telluride phototransistor, Total:33 items.
The international standard classification for "Molybdenum telluride phototransistor" includes: Metalliferous minerals , Other non-ferrous metals and their alloys .
The Chinese standard classification for "Molybdenum telluride phototransistor" includes: Technical management , Rare metals and their alloys analysis method , Heavy metal ore , Heavy metals and their alloys analysis method .
Professional Standard - Electron
- SJ 20719-1998 Method of determination X value for mercury cadmium telluride for use in X-ray fluorimetry
- SJ/T 2217-2014 Technical specification for phototransistor of silicon
- SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
- SJ 50033/111-1996 Semiconductor optoelectronic devices - Detail specification for Type GT16 Si. NPN phototransistor
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 15651.7-2024 Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors
- GB/T 14352.17-1993 Methods for chemical analysis of tungsten ores and molybdenum ores. Determination of tellurium content-butyl-Rhodamine B photometric method
- GB/T 14353.16-1993 Methods for chemical analysis of copper ores lead ores and zinc ores. Determination of tellurium content. Graphite furnace atomic absorption spectrometric method
Professional Standard - Non-ferrous Metal
- YS/T 227.11-2010 Methods for chemical analysis of tellurium - Part 11: Determination of silicon content - N-butanol extraction molybdenum blue spectrophotometry
Professional Standard - Aviation
- HBm 66.33-1989 Minivan Transistor Flasher Relay
ES-UNE
- UNE-EN 120003:1992 BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
SE-SIS
- SIS SS CECC 20003-1988 Blank detail specification: Phototransistors, photodar/ington transistors, phototransistor arrays
German Institute for Standardization
- DIN EN 120003:1996 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
- DIN EN 120003:1996-11 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
European Standard for Electrical and Electronic Components
- EN 120003:1992 Blank detail specification: phototransistors, photodarlington transistors, phototransistor arrays
Association Francaise de Normalisation
- NF EN 120003:1992 Special framework specification: phototransistors, photodarlington transistors, phototransistor networks
- NF C93-120-003*NF EN 120003:1992 Blank detail specification : phototransistors, photodarlington transistors, phototransistor arrays
- NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.
Lithuanian Standards Office
- LST EN 120003-2001 Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
SCC
- DANSK DS/EN 120003:2016 Blank Detail Specification: Phototransistors, photodarlington transistors, phototransistor arrays
British Standards Institution (BSI)
- BS EN 120003:1986 Specification for harmonized system of quality assessment for electronic components - Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays
- BS EN 120003:1993 Specification for harmonized system of quality assessment for electronic components. Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
- BS EN IEC 63202-1:2019 Photovoltaic cells - Measurement of light-induced degradation of crystalline silicon photovoltaic cells
CZ-CSN
- CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
- CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
U.S. Military Regulations and Norms
- ARMY QPL-46320-30-1992 POWER SUPPLY, 10516158 (TRANSISTORIZED)
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification
GSO
- BH GSO IEC 60747-5-7:2022 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- GSO IEC 60747-5-7:2021 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
International Electrotechnical Commission (IEC)
- IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
- IEC 60293:1968 Supply voltages for transistorized nuclear instruments
RO-ASRO
- STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics
- STAS SR ISO 1620:1995 Cryolite, natural and artificial — Determination of silica content — Reduced molybdosilicate spectrophotometric method
BE-NBN
- NBN C 71-458-1985 Lighting appliances and similar apparatus, transistorized ballasts for fluorescent tube lamps
Molybdenum Telluride Thermal Conductivity,Molybdenum telluride transfer,td molybdenum telluride,Properties of Molybdenum Telluride,Properties of Molybdenum Telluride,Molybdenum Telluride Interstitial,molybdenum selenium telluride,hq molybdenum telluride,Molybdenum telluride annealing,Molybdenum telluride base,molybdenum selenium telluride,Molybdenum telluride hybrid,Molybdenum telluride phototransistor,Molybdenum telluride strain,Molybdenum telluride melting point,Molybdenum Telluride Stock,Molybdenum telluride potential,Molybdenum telluride base,monolayer molybdenum telluride,Molybdenum telluride bandwidth
