Three-electrode system and two-electrode system

Three-electrode system and two-electrode system, Total:166 items.

The international standard classification for "Three-electrode system and two-electrode system" includes: Capacitors , Materials and components for shipbuilding , Motors , Generators .

The Chinese standard classification for "Three-electrode system and two-electrode system" includes: Electrical system and equipment , Electronic components , Technical management , Microwave and millimeter wave diode and triode , Technical management , Technical Management , Technical management , Vessel materials and their inspection methods , Asynchronous machine , Synchronous machine .

Professional Standard - Aviation

HB 5659-1981 Liquid Electric Switch for Tripolar Glass
HB 5831-1983 Technical Requirements of Semiconductor Diode and Triode for Aviation
HB 5658-1981 Liquid Electric Switch for Dipolar Glass
HB 5832-1983 Technical Specifications of Semiconductor Diode and Triode Screening for Aviation

Professional Standard - Electron

SJ 50033/69-1995 Semiconductor discrete device-Detail specification for Type PIN30 series for PIN diode
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
SJ 20644.1-2001 Semiconductor optoelectronic devices Detail specification for type GD3550Y PIN photodiode
SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes
SJ 50033/112-1996 Semiconductor optoelectronic devices-Detail specification for Type GD3251Y photodiodes
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
SJ 1385-1978 General specification for noise-generator diodes and gas discharge noise tubes
SJ 50033.49-1994 Semiconductor discrete device-Detail specification for step recovery diodes for 2CJ4220 series
SJ 50033/113-1996 Semiconductor optoelectronic devices - Detail specification for Type GD3252Y photodiodes
SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
SJ 50033/70-1995 Semiconductor discrete device - Detail specification for Type PIN35 series for PIN diode
SJ 20644.2-2001 Semiconductor optoelectronic devices Detail specification for type GD101 PIN photodiode
SJ/T 11401-2009 Series program for semiconductor light emitting diodes

工业和信息化部

XB/T 702-2022 Three-electrode system test method for testing the electrochemical properties of rare earth hydrogen storage alloy powder for metal hydride-nickel battery negative electrodes

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 3108-1999 Impressed current cathodic protection system for ship hull
GB/T 15651.7-2024 Semiconductor devices—Part 5-7: Optoelectronic devices—Photodiodes and phototransistors

Group Standards of the People's Republic of China

T/ZGTS 002-2022 Oil-based needle coke for graphite electrode body

Professional Standard - Military and Civilian Products

WJ 1807-2000 Technical screening conditions of semiconductor diodes and triodes for use of ordnance
WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes

Taiwan Provincial Standard of the People's Republic of China

CNS 8105-1981 Test Method for Transistor Collector - Emitter Saturation Voltage
CNS 7011-1981 Numbering of Electrodes in Multiple Electrode Semiconductor Devices and Designation of Units in Multiple Unit Semiconductor Devices

Xizang Provincial Standard of the People's Republic of China

DB54/T 0274.1-2023 The Third Pole Brand Evaluation System on Earth Part 1: General Principles

Professional Standard - Machinery

JB/T 6741-1993 YSD Series Pole Change Double Speed Three-phase Asynchronous Motors
JB/T 6741-2013 YSD Series two-speed pole-changing three-phase asynchronous motors
JB/T 10747-2007 Specification for integrated salient pole brushless three - Phase synchronous generator

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04026-1989 BJ2985 type crystal triode maintenance voltage tester verification regulations

Military Standard of the People's Republic of China-General Armament Department

GJB/Z 41.1-1993 Military semiconductor discrete device series spectrum microwave diodes

Fujian Provincial Standard of the People's Republic of China

DB35/T 1193-2011 Semiconductor LED chip

RU-GOST R

GOST 21107.13-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for pulsed thyratrons and gas-filled rectifiers
GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
GOST 29210-1991 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes
GOST 26169-1984 Radioelectronic equipment electromagnetic compatibility. High-power bipolar high-frequency linear transistors intermodulation component coefficient standards
GOST 18986.3-1973 Semiconductor diodes. Method of measuring of direct forward voltage and direct forward current
GOST 18604.3-1980 Transistors bipolar. Methods for measuring collector and emitter capacitances
GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge
GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
GOST 18986.0-1974 Semiconductor diodes. Measuring methods for electrical parameters. General requirements
GOST 17792-1972 Standarde reference silver-silver cloride saturate electrode of second class
GOST 19656.1-1974 Semiconductor UHF mixer and detector diodes. Measurement method of voltage standing-wave ratio
GOST 21107.9-1976 Gas-discharge devices. Methods of measurement of electrial parameters of pulse thyratrons
GOST 18986.1-1973 Semiconductor diodes. Method for measuring direct reverse current
GOST 18604.27-1986 Power high-voltage bipolar transistors. Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current
GOST 21107.8-1976 Gas discharge devices. Measuring methods of electrical characteristics of impulsive diodes
GOST 17465-1980 Semiconductor diodes. Basic parameters
GOST 20398.13-1980 Field-effect transistors. Drain source resistance measurement technique
GOST 18604.14-1977 Bipolar microwave oscillator transistors. Techniques for measuring coefficient modulus of inverse transmission of voltage in the circuit with general base at high frequency
GOST 19656.15-1984 Semiconductor UHF diodes. Measurement methods of thermal resistance and pulse thermal resistance
GOST 19656.0-1974 Semiconductor UHF diodes. Measurement methods of electrical parameters. General conditions

GOST

GOST R 70873-2023 Semiconductor rectifier diodes and poles. Parameters system
GOST R 70999-2023 Semiconductor diodes. Parameters system
GOST R 70744-2023 Semiconductor tunnel diodes. Parameter system
GOST R 71081-2023 Microwave semiconductor diodes. Parameters system
GOST R 70786-2023 Avalanche pulse semiconductor diodes. Parameter system
GOST R 71067-2023 Zener diodes and semiconductor voltage limiters. Parameters system
GOST R 70899-2023 Gas-discharge devices. Hot cathode thyratrons. Parameters system
GOST R 71054-2023 Bipolar transistors. Parameters system

CZ-CSN

CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
CSN 35 8760-1973 Seraiconductors. Stabilizing diodes. Measurement of voltage temperature coefficient
CSN 35 8785-1975 Semiconductor devices. Varicaps. Measurement of thermal capacitance coefflcient.
CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
CSN 35 8761-1973 Semiconductor devices. Phototransistors photodíodes. Measurement of photoelectric current
CSN 35 8762-1973 Semiconductor devices. Phototransistors photodiodes. Measurement of dark current
CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
CSN 35 8757 Cast.1-1985 Transistors. Measuring method of collector-base and emitterbase breakdown voltage
CSN 35 8767-1982 Semiconductor diodes Methods of electrical parameters measurement
CSN 35 8737-1975 Semiconductor devices. Diodes. Measurement of differential rosistanoe
CSN 01 4202-1989 Unified system of limits and fits CMEA. Tolerance zones and recom-mended fits
CSN 01 4202-1976 Unified aystem of limits and fits CMEA. Tolerance zones and recommended fits.
CSN 35 8741-1964 Transistore. Measurement of colleotor emitter residual voltage
CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods
CSN 35 8757 Cast.12-1989 Blpolar transistors. Impuls measuring method of break-down voltage collector-emltter
CSN 35 8769-1983 Semiconductor Zener diodes. Electric parameters measurement methods
CSN 35 8733-1975 Semiconductor devices. Diodes. Measurement of reverse voltago (working voltago)
CSN 35 8763-1973 Semiconductor devices. Diodes. Measurement o? reverse breakdown voltage
CSN 35 8731-1975 Semiconductor devices. Diodes Measurement of d. c. forward voltage
CSN 35 8757 Cast.4-1985 Transistors. Methods of measuring collector cut-off current, emitter cut-off current and collector-emitter cut-off current
CSN 35 8757 Cast.8-1985 Transistors. Measuring methods of base-emitor voltage
CSN 35 8766-1976 Semieonductor devices. Switching diodes. Measurement cf forward volíage.
CSN 01 4201-1989 Unified system of limits and fits CMEA. General regulations, tole-rances, fundamental deviations

SCC

BS EN 20286-2:1993 ISO system of limits and fits-ISO system of limits and fits. Tables of standard tolerance grades and limit deviations for holes and shafts
BS CECC 20001:1983 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes, light emitting diode arrays
BS PD CEN ISO/TR 9241-309:2015 Ergonomics of human-system interaction-Organic light-emitting diode (OLED) displays
DIN EN 4728 E:2014 Draft Document - Aerospace series - Circuit breakers, single and three poles dummies - Product standard; German and English version FprEN 4728:2014
BS EN 120008:1995 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes and infrared emitting diodes for fibre optic system or sub-system
BS IEC 60747-7:2000 Discrete semiconductor devices and integrated circuits-Bipolar transistors
BS EN 150009:1993 Harmonized system of quality assessment for electronic components. Blank detail specification: case-rated rectifier diodes

Association Francaise de Normalisation

NF C86-505:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Photodiodes. Photodiodes-arrays. Blank detail specification CECC 20 005.
NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
NF C86-815:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.
NF L58-533*NF EN 4728:2015 Aerospace series - Circuit breakers, single and three poles dummies - Product standard
NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
NF C86-816:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : variable capacitance diodes.
NF C96-832:1981 Semiconductors. Microwave diodes. Schottky diodes. General requirements.
NF EN ISO 20168:2021 Resistance welding - Clamping cones for electrode holders and electrode tips
NF C85-211:1982 Harmonized system of quality assessment for electronic components. Blank detail specification. Industrial heating triodes.
NF C96-007:1989 Semiconductor devices. Discrete devices and integrated circuits. Part 7 : bipolar transistors.

Korean Agency for Technology and Standards (KATS)

KS B ISO 4400:2002 Fluid power systems and components-Three-pin electrical plug connectors with earth contact-Characteristics and requirements
KS C IEC 60747-3-2:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
KS C IEC 60747-3:2006 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
KS C IEC 60747-3:2016 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes

RO-ASRO

STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes
STAS 12258/2-1984 Optoelectronic semiconductor devices PIIOTODIODES Terminology and essentia] characteristics
STAS 12123/2-1983 Semiconductor devices LOW POWER SIGNAL DIODES, INCLUDING SWITCHING DIODES Measuring methods for electrical characteristics

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE 256-1963 SEMICONDUCTOR DIODES

British Standards Institution (BSI)

BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS E9375:1975 Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS EN 150014:1995 Harmonized system of quality assessment for electronic components. Blank detail specification: Thyristor diodes, transient overvoltage suppressors
BS EN IEC 62561-2:2018 Lightning protection system components (LPSC). Requirements for conductors and earth electrodes
BS EN 150014:1997 Harmonized system of quality assessment for electronic components - Blank detail specification: Thyristor diodes, transient overvoltage suppressors
BS EN 62561-2:2012 Lightning Protection System Components (LPSC). Requirements for conductors and earth electrodes

Defense Logistics Agency

DLA SMD-5962-97561 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, TRIPLE 3-INPUT POSITIVE AND GATES, MONOLITHIC SILICON
DLA A-A-55428 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55426 D-2012 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55429 D-2012 FUSEHOLDER, BLOCK, CLASS H, 100 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55168 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55427 D-2012 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
DLA SMD-5962-97581 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, TRIPLE 3-INPUT POSITIVE AND GATE, MONOLITHIC SILICON
DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
DLA MIL-PRF-19500/656 A-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS
DLA DSCC-DWG-05017 REV B-2012 CAPACITORS, FIXED ELECTROLYTIC (NONSOLID ELECTROLYTE), TANTALUM ANODE AND CATHODE
DLA DSCC-DWG-91011 REV B-2003 SEMICONDUCTOR DEVICE, DIODE, ULTRA FAST
DLA A-A-51187 B-2001 WELDING TORCHES AND COMPONENT PARTS, GAS TUNGSTEN ARC WELDING (GTAW)

Standard Association of Australia （SAA）

AS 2203.1:1990(R1992) Cored electrodes for arc welding Part 1: Ferritic steel electrodes
AS 2203.1:1990 Cored electrodes for arc welding Part 1: Ferritic steel electrodes

Australian/New Zealand Standard (AU-AS/NZS)

AS/NZS 2717.1:1996 Welding - Electrodes - Gas metal arc - Ferritic steel electrodes

PL-PKN

PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
PN T01504-22-1987 Transistors Measuring methods Collector-base and emitter-base capacitances Ccbo and Cebo

Society of Automotive Engineers (SAE)

SAE AMS2685E-2007 Welding, Tungsten Arc, Inert Gas, (GTAW Method)
SAE AMS2685B-1985 WELDING, TUNGSTEN ARC, INERT GAS Non-Consumable Electrode (GTAW Method)

International Electrotechnical Commission (IEC)

IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
IEC 60747-5-7:2016 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IECQ 03-8-2018 IEC Quality Assessment System for Electronic Components (IECQ System) - Rules of Procedure - Part 8: IECQ Scheme for LED Lighting
IEC 60747-3:2013 Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
IEC 60747-3:1985 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes

GSO

GSO IEC 60747-5-7:2021 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
BH GSO IEC 60747-5-7:2022 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
GSO IEC 62088:2014 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures

International Organization for Standardization (ISO)

ISO 24598:2019 Welding consumables — Solid wire electrodes, tubular cored electrodes and electrode-flux combinations for submerged arc welding of creep-resisting steels — Classification

YU-JUS

JUS A.A4.302-1990 Tabular layouts ofarticle characteristics for semiconductor diodes

IECQ - IEC: Quality Assessment System for Electronic Components

QC 750101/SU 0004-1990 Detail Specification for Electronic Components Semiconductor Diodes@ Ambient-Rated Designated for Circuits in TV Receivers Switching Diodes (Sw)@ Type KD805A

German Institute for Standardization

DIN 45980-1002:1977 Harmonized system of quality assessment for electronic components; blank detail specification: industrial heating triodes

(U.S.) Ford Automotive Standards

FORD BFX-2-1983 ELECTROCOATING SYSTEM, CATHODIC

Danish Standards Foundation

DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

CH-SNV

VSM 18656-1964 System rules for limit values of electronic ears and analog semiconductor components

Japanese Industrial Standards Committee (JISC)

JIS C 7233:1978 Reliability assured bi-directional triode thyristors (low current)

AIA/NAS - Aerospace Industries Association of America Inc.

NAS717-1963 Semiconductor Diodes (Rev 1)

SE-SIS

SIS SS 06 05 21-1990 Welding electrodes — Wire electrodes and tubular wires for gas metal arc welding and metal arc welding — Standard dimensions for electrodes andspools

Others: Two-electrode three-electrode system,Two-electrode system potential and three-electrode system potential,Two-electrode and three-electrode systems,Three-electrode system and two-electrode system,Three-electrode system and two-electrode system