cathode anode
cathode anode, Total:63 items.
The international standard classification for "cathode anode" includes: Other products of non-ferrous metals , Materials for aluminium production , Corrosion of metals , Other treatments and coatings , Reaction vessels and their components , Conducting materials .
The Chinese standard classification for "cathode anode" includes: Rare light metals and their alloys , Carbon material , Metal chemical property test method , Rare refractory metals and their compounds , Material Protection , Chemical equipment , Graphite material .
Professional Standard - Non-ferrous Metal
- YS/T 63.2-2006 Carbonaceous materials used in the production of aluminium Part 2
- YS/T 828-2012 Titanium Anodes for Use in Cathodic Protection of Soils or Natural Waters
- YS/T 828-2022 Titanium anodes for cathodic protection
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 41493.1-2022 Accelerated life test method of mixed metal oxide anodes for cathodic protection—Part 1: Application in concrete
- GB/T 41493.2-2022 Accelerated life test method of mixed metal oxide anodes for cathodic protection—Part 2: Application in soils and natural waters
- GB/T 26295-2010 Carbonaceous materials used in the production of aluminium—Prebaked anodes and cathode blocks—Determination of flexural strength by the four-point method
- GB/T 34498-2017 Tungsten cathode materials for laser lamps
- GB/T 33637-2017 Cathodicprotection-MMO/Ti flexible anode
Professional Standard - Petroleum
- SY/T 0047-2012 Technical Specification for Sacrificial Anode Cathodic Protection of Internal Surfaces of Oil & Gas Treating Vessels
Professional Standard - Chemical Industry
- HG/T 2951-2001 metal anode cells used diaphragm method
- HG/T 4593-2014 Dimensionally stable anode electrolyzer for chlorate
- HG/T 2951-2012 Metal anode cells used diaphragm method
Professional Standard - Ferrous Metallurgy
- YB/T 5288-1999 Test methods for corrosion resistance of graphite anode
Swedish Institute for Standards
- SS-EN 12496:2013 Galvanic anodes for cathodic protection in seawater and saline mud
Gosstandart of Russia
- GOST 11612.3-1975 Photomultipliers. Measuring method of non-uniformity of light anode sensitivity over the photocatode area
European Committee for Standardization (CEN)
- FprEN ISO 9351 Galvanic anodes for cathodic protection in seawater and saline sediments (ISO/FDIS 9351:2024)
- EN ISO 15257:2017 Cathodic protection - Competence levels of cathodic protection persons - Basis for certification scheme
Magyar Szabványügyi Testület
- MSZ 10906/10.lap-1964 Electric tube power mark measurement mode. Cathode to anode current rises to the time of measurement
International Organization for Standardization (ISO)
- ISO 15257:2017 Cathodic protection - Competence levels of cathodic protection persons - Basis for a certification scheme
Underwriter Laboratories of Canada (ULC)
- ULC-S618-2008 STANDARD FOR ANODES AND REFERENCE ELECTRODES FOR CATHODIC PROTECTION OF STEEL UNDERGROUND TANKS
British Standards Institution (BSI)
- BS EN ISO 15257:2017 Cathodic protection. Competence levels of cathodic protection persons. Basis for a certification scheme
Military Standards (MIL-STD)
- MIL MIL-PRF-19500/642-1997 SEMI. DEVICE DIODE SILICON POWER RECTIFIER DUAL COMMON CATHODE ANODE CENTER TAP ULTRAFAST TYPES 1N6762 -1N6765 & 1N6762R-1N6765R JANTX, JANTXV, AND JANS (S/S BY MIL-PRF-19500/642A)
- MIL MIL-PRF-19500/616G-2009 Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6657 through 1N6659 JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/616H-2017 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST (SUPERSEDING MIL-PRF-19500/616G)
- MIL MIL-PRF-19500/671-2000 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, NN6828U3 AND 1N6833U3 JAN, JANTX, JANTXV, JANS
- MIL MIL-PRF-19500/645D-2013 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6772, 1N6773, 1N6772R and 1N6773R JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/645C-2007 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6772, 1N6773, 1N6772R and 1N6773R JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/645E-2018 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6772, 1N6773, 1N6772R and 1N6773R JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/616F-2008 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6657 through 1N6659 and 1N6657R through 1N6659R, JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/616A-1997 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST (SUPERSEDING MIL-S-19500/616) (S/S BY MIL-PRF-19500/616B)
- MIL MIL-PRF-19500/671A-2012 Semiconductor Device, Diode, Silicon, Schottky Power Rectifier, Common Cathode or Anode Center Tap, Types 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3 and 1N6833U3 JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/643D-2020 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6766 and 1N6767, 1N6766R and 1N6767R, JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/642E-2018 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/642D-2007 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/656C-2020 Diode, Silicon, Schottky, Power Rectifier, Common Cathode or Common Anode Center Tap, Types 1N6785 and 1N6785R, JAN, JANTX, JANTXV and JANS
- MIL MIL-PRF-19500/656B-2015 Diode, Silicon, Schottky, Power Rectifier, Common Cathode or Common Anode Center Tap, Types 1N6785 and 1N6785R, JAN, JANTX, JANTXV and JANS
- MIL MIL-PRF-19500/608D-2009 Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, and 1N6660DT1, JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/608E-2018 Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, and 1N6660DT1, JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/645B-2005 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS(SUPERSEDING MIL-PRF-19500/645A)
- MIL MIL-PRF-19500/617D-2009 Semiconductor Devices, Unitized, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6672 through 1N6674 and 1N6672R through 1N6674R, JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/617F-2020 Semiconductor Devices, Unitized, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6672 through 1N6674 and 1N6672R through 1N6674R, JAN, JANTX, JANTXV, and JANS
- MIL MIL-PRF-19500/617E-2014 Semiconductor Devices, Unitized, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6672 through 1N6674 and 1N6672R through 1N6674R, JAN, JANTX, JANTXV, and JANS
Korean Agency for Technology and Standards (KATS)
- KS M ISO 11713:2004 Carbonaceous materials used in the production of aluminium-Cathode blocks and baked anodes-Determination of electrical resistivity at ambient temperature
- KS M ISO 11713:2013 Carbonaceous materials used in the production of aluminium-Cathode blocks and baked anodes-Determination of electrical resistivity at ambient temperature
- KS D 7031-2012(2022) Magnesium galvanic anodes for cathodic protection
German Institute for Standardization
- DIN EN ISO 15257 E:2016-06 Fundamentals of a scheme for certification of competency levels for cathodic and anode protection personnel (draft)
- DIN EN ISO 15257 E:2015-04 Fundamentals of a scheme for certification of competency levels for cathodic and anode protection personnel (draft)
- DIN EN ISO 15257:2017 Cathodic protection - Competence levels of cathodic protection persons - Basis for a certification scheme (ISO 15257:2017); German version EN ISO 15257:2017
PL-PKN
- PN E05030-10-1990 Corrosion protection Electrochemical cathodic and anodic protection Terms and definitions
Defense Logistics Agency
- DLA MIL-PRF-19500/643 C (1)-2012 SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS
- DLA MIL-PRF-19500/642 D VALID NOTICE 1-2012 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6762 Through 1N6765 and 1N6762R Through 1N6765R JANTX, JANTXV, and JANS
- DLA MIL-PRF-19500/671 A-2012 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3, AND 1N6833U3, JAN, JANTX, JANTXV, AND JANS
- DLA MIL-PRF-19500/608 D-2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
- DLA MIL-PRF-19500/608 D (1)-2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
- DLA MIL-PRF-19500/644 A VALID NOTICE 2-2011 Semiconductor Device, Diode, Silicon, Power Rectifier, Dual, Common Cathode or Anode Center Tap, Ultrafast, Types 1N6768 Through 1N6771 and 1N6768R Through 1N6771R JAN, JANTX, JANTXV, and JANS
- DLA MIL-PRF-19500/656 A-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS
US-FCR
- FCR UFGS-26 42 13.00 20-2006 CATHODIC PROTECTION BY GALVANIC ANODES
- FCR COE MOGS-16640-1983 CATHODIC PROTECTION SYSTEM (SACRIFICIAL ANODE)
- FCR UFGS-26 42 14.00 10-2008 CATHODIC PROTECTION SYSTEM (SACRIFICIAL ANODE)
BR-ABNT
- ABNT NBR 9241-2012 Graphite anodes for cathodic protection
U.S. Military Regulations and Norms
- ARMY UFGS-26 42 14.00 10-2006 CATHODIC PROTECTION SYSTEM (SACRIFICIAL ANODE)
Japanese Industrial Standards Committee (JISC)
- JIS H 6125:1995 Magnesium galvanic anodes for cathodic protection
Standard Association of Australia (SAA)
- AS 2239:2003(R2016) Galvanic (sacrificial) anodes for cathodic protection
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