Total dose effect testing

Total dose effect testing, Total:160 items.

The international standard classification for "Total dose effect testing" includes: Chemical reagents , Medical Sciences and health care facilities in general , Laboratory medicine .

The Chinese standard classification for "Total dose effect testing" includes: Chemical reagent in general , Medical science , Medical laboratory equipment .

Group Standards of the People's Republic of China

T/CNS 82-2022 Test method for total ionizing dose effect of static random-access memory in space application

Professional Standard - Aerospace

QJ 10004-2008 Total dose radiation testing method of semiconductor devices for space applications

未注明发布机构

JEDEC JESD22-B121-2023 Test Method for Total Ionizing Dose (TID) from X-ray Exposure in Terrestrial Applications
DIN 52018 E:2016-03 Bitumens and bituminous binders - Thermal effect in an oven and determination of change in mass by thermal effect

Professional Standard - Agriculture

GB/T 609-2018(XG1-2024) Chemical Reagents General Method for Determination of Total Nitrogen
GB 609-1988 General method for the determination of total nitrogen content of chemical reagents

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 609-1988 Chemical reagent-General method for the determination of total nitrogen
GB/T 609-2018 Chemical reagent—General method for the determination of total nitrogen
GB/T 609-2006 Chemical Reagent - General Method for the Determination of Total Nitrogen
GB/T 27784-2011 Field efficacy test methods and criterions of public health insecticides - General principles

Military Standard of the People's Republic of China-General Armament Department

GJB 5814-2006 Testing method of X-ray dose enhancement effect for military electronic devices
GJB 8670.1-2015 Special bullet effect test methods Part 1: General principles

工业和信息化部

QB/T 2623.9-2020 Test methods of soaps- -Determination of total effctive matter content in soaps

Professional Standard - Medicine

YY/T 1444-2016 Total protein test reagent

American Society for Testing and Materials (ASTM)

ASTM F1892-12(2018) Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-98 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-06 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F1892-04 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
ASTM F526-97 Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
ASTM F526-11 Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
ASTM F526-97(2003) Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
ASTM F526-16 Standard Test Method for Using Calorimeters for Total Dose Measurements in Pulsed Linear Accelerator or Flash X-ray Machines
ASTM C1171-05(2011) Standard Test Method for Quantitatively Measuring the Effect of Thermal Shock and Thermal Cycling on Refractories
ASTM C1171-15 Standard Test Method for Quantitatively Measuring the Effect of Thermal Shock and Thermal Cycling on Refractories
ASTM C1171-05 Standard Test Method for Quantitatively Measuring the Effect of Thermal Shock and Thermal Cycling on Refractories

German Institute for Standardization

DIN 54402:2009 Testing of ion exchangers - Determination of the total capacity of anion exchangers
DIN 54403:2009 Testing of ion exchangers - Determination of the total capacity of cation exchangers
DIN 52018:2016 Bitumens and bituminous binders - Thermal effect in an oven and determination of change in mass by thermal effect
DIN 52018:2005 Bitumens and bituminous binders - Thermal effect in an oven and determination of change in mass by thermal effect
DIN 52018:2016-08 Bitumens and bituminous binders - Thermal effect in an oven and determination of change in mass by thermal effect
DIN 54402:2009-04 Testing of ion exchangers - Determination of the total capacity of anion exchangers

SCC

MIL MIL-PRF-19500/707C-2015 Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR
MIL MIL-PRF-19500/707B-2011 Transistor, Field Effect Radiation Hardened (Total Dose and Single Event Effects) N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR
MIL MIL-PRF-19500/707-2002 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7500U5 2N7501U5 2N7502U5 JANTXVR JANSR
MIL MIL-PRF-19500/633C-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, P-Channel Silicon, Types 2N7403 and 2N7404, JANSD and JANSR
MIL MIL-PRF-19500/659-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR
MIL MIL-PRF-19500/658-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
MIL MIL-PRF-19500/684-2000 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR
MIL MIL-PRF-19500/684H-2016 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
MIL MIL-PRF-19500/701-2001 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE AND SINGLE EVENT EFFECTS)TRANSISTOR, N-CHANNEL SILICON TYPES 2N7491T2 2N7492T2 2N7493T2 JANTXVR F G H JANSR F G H
MIL MIL-PRF-19500/707A-2007 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7500U5, 2N7501U5, and 2N7502U5, JANTXVR and JANSR
MIL MIL-PRF-19500/749-2008 Semiconductor Device, Field Effect Transistor, P-Channel Radiation Hardened (Total Dose and Single Event Effects), Silicon, Types 2N7506U8 and 2N7506U8C, JANTXVR, JANTXVF, JANSR and JANSF
MIL MIL-PRF-19500/752-2010 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Type 2N7608T2, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/689-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R
MIL MIL-PRF-19500/752A-2017 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Type 2N7608T2, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/712-2003 SEMICONDUCTOR DEVICE FIELD EFF. RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTORS -CHANNEL SILICON TYPES 2N7545U3 2N7546U3 2N7547T3 & 2N7548T3 JANTXVR F G H & JANSR F G H
MIL MIL-PRF-19500/603-1992 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANS, N-CHANNEL, SILICON TYPES 2N7268, ETC
MIL MIL-PRF-19500/638B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/638A)
MIL MIL-PRF-19500/675D-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel, Silicon Types 2N7463T2, 2N7464T2, 2N7463U5 and 2N7464U5 JANTXVR and JANSR
MIL MIL-PRF-19500/666-1999 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R (NO S/S DOCUMENT)
MIL MIL-PRF-19500/661-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7444, 2N7434, 2N7391 AND 2N7392 JANTXVR; AND JANSR
MIL MIL-PRF-19500/753B-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7580T1, 2N7582T1, 2N7584T1, and 2N7586T1, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/631C-2019 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7396, 2N7397 AND, 2N7398, JANSD AND JANSR
MIL MIL-PRF-19500/713-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/639A-1998 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR (SUPERSEDING MIL-S-19500/639)
MIL MIL-PRF-19500/713E-2018 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/753A-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7580T1, 2N7582T1, 2N7584T1, and 2N7586T1, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/744-2008 Semiconductor Device, Field Effect Transistor, N-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/713F-2018 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/654-2000 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N430T1 JANTXVD, JANTXVR, AND JANSR(NO S/S DOCUMENT)
MIL MIL-PRF-19500/685D-2007 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR(SUPERSEDING MIL-PRF-19500/685B)
MIL MIL-PRF-19500/745-2008 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/753-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7580T1, 2N7582T1, 2N7584T1, and 2N7586T1, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/741-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
MIL MIL-PRF-19500/685H-2016 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/685G)
MIL MIL-PRF-19500/745E-2018 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/684D-2007 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684C)
MIL MIL-PRF-19500/745C-2011 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/755A-2017 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF
MIL MIL-PRF-19500/676D-2007 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel, Silicon, Types 2N7465T3 and 2N7466T3 and U3 Suffixes, JANTXVR and JANSR
MIL MIL-PRF-19500/633B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON TYPES 2N7403 AND 2N7404, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/633A)
MIL MIL-PRF-19500/741B-2018 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
MIL MIL-PRF-19500/703-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE & SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7479U3 - 2N7481U3 JANTXVR F G & H & JANSR F G & H
MIL MIL-PRF-19500/745A-2009 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/733A-2007 Semiconductor Device, Field Effect Radiation Hardened(Total Dose and Single Event Effects)Transistors, P-Channel, Silicon, Types 2N7523T1, 2N7523U2, 2N7524T1, and 2N7524U2,JANTXVR, F and JANSR, F
MIL MIL-PRF-19500/745D-2012 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/683-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F,G, AND H AND JANSR, F, G, AND H
MIL MIL-PRF-19500/684B-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684A)
MIL MIL-PRF-19500/733-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/683C-2008 Semiconductor Device, Transistor, Field Effect, N-Channel, Radiation Hardened (Total Dose and Single Event Effects) Type 2N7467U2, JANTXVR, F, G, and H and JANSR, F, G, and H
MIL MIL-PRF-19500/745B-2010 Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic-Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF
MIL MIL-PRF-19500/706-2002 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED(TOTAL DOSE & SINGLE EVENT EFFECTS)TRANSISTOR N-CHANNEL SILICON TYPE 2N7497T2 2N7498T2 2N7499T2 JANTXVR JANSR (S/S BY MIL-PRF-19500/706A)
MIL MIL-PRF-19500/741A-2009 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
MIL MIL-PRF-19500/755-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF
MIL MIL-PRF-19500/684C-2006 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684B)
HOLDEN HN 0285-2016 Purge Solvent Efficiency Test
MIL MIL-PRF-19500/699-2001 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOATL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7527U3, 2N7528U3, 2N7529U3 JANTXVD, R & JANSD, R(NO S/S DOCUMENT)
DIN 52018 E:2016 Draft Document - Bitumens and bituminous binders - Thermal effect in an oven and determination of change in mass by thermal effect
MIL MIL-PRF-19500/705A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/705)
MIL MIL-PRF-19500/634B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/634A)
MIL MIL-PRF-19500/632B-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND JANSR (SUPERSEDING MIL-PRF-19500/632A)
MIL MIL-PRF-19500/706A-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/706)
MIL MIL-PRF-19500/743-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7503U8 and 2N7503U8C, JANTXVR, F and G and JANSR, F and G
MIL MIL-PRF-19500/732A-2008 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, P-Channel, Silicon, Types 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, and 2N7520T3, JANTXVR, F and JANSR, F
MIL MIL-PRF-19500/732-2005 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3 AND T3, 2N7520U3 AND T3, JANTXVR, F AND JANSR, F
MIL MIL-PRF-19500/739-2006 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F
MIL MIL-PRF-19500/684A-2003 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2, AND 2N7474U2 JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/684)
MIL MIL-PRF-19500/704A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR (SUPERSEDING MIL-PRF-19500/704)
MIL MIL-PRF-19500/667-2000 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7456U1, 2N457U1, AND 2N7459U1, JANTXVD, JANTXVR, JANSD, AND JANSR(NO S/S DOCUMENT)
MIL MIL-PRF-19500/687A-2004 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R (SUPERSEDING MIL-PRF-19500/687)

Defense Logistics Agency

DLA MIL-PRF-19500/634 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR
DLA MIL-PRF-19500/685 D (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/685 E-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/684 D (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/685 F-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR
DLA MIL-PRF-19500/704 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/658 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
DLA MIL-PRF-19500/706 A VALID NOTICE 1-2010 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR
DLA MIL-PRF-19500/633 C-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR
DLA MIL-PRF-19500/704 C-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/705 C-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR
DLA MIL-PRF-19500/749-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/752-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/704 B (1)-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR
DLA MIL-PRF-19500/687 B VALID NOTICE 1-2013 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon, Types 2N7509, 2N7510, and 2N7511, JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/689 VALID NOTICE 2-2011 Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel Silicon Types 2N7512, 2N7513, and 2N7514 JANTXVD, R and JANSD, R
DLA MIL-PRF-19500/744-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/683 C-2008 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/745-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/687 B-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R
DLA MIL-PRF-19500/745 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/747-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH
DLA MIL-PRF-19500/741 A-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC
DLA MIL-PRF-19500/733 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/755-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF
DLA MIL-PRF-19500/713 B-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/683 C (1)-2009 SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/741 A VALID NOTICE 1-2013 Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC
DLA MIL-PRF-19500/753 B-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/757 A-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/753-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/746 B-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 D-2011 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/732 A-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F
DLA MIL-PRF-19500/655 E-2012 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F
DLA MIL-PRF-19500/697 E-2013 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
DLA MIL-PRF-19500/743-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/758-2010 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G
DLA MIL-PRF-19500/746-2008 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF
DLA MIL-PRF-19500/697 C (1)-2009 SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

CZ-CSN

CSN ON 44 1349-1962 Determine the potency of reagents
CSN 68 4124-1980 Determination of small mounts of total nitrogen
CSN 68 1145-1994 Testing methods for surfactans and detergents. Analysis of soaps — Determination of total alkali content and total fatty atter content
CSN 68 1155-1994 Testing methods for surfactants and detergents. Determination of total phosphorus oxide content

YU-JUS

JUS H.G8.435-1990 Reaqents. Potassium iodide. Determination of total nitroaen content. Colorimetric method
JUS H.G8.083-1983 Reagents. Sodium chloride. Determination of total nitrogen content. Colorimetric method
JUS H.G8.457-1991 Reagents. Potassium sulpbate. Determination of total nltrogen content. Colorlmetrlc metho?
JUS H.G8.104-1984 Reagents. Potassium chloride. Determination of total nitrogen content. Colorimetric method
JUS H.G8.290-1987 Reagents. Copper(ll) oxide. Determination of total nitrogen content. Colorimetric method
JUS H.G8.055-1983 Reagents. Hydrogen peroxide. Determination of total nitrogen content. Colorimetric method
JUS H.G8.343-1988 Reagents. Zine chloride. Determination of total nitrogen content. Colorinetcic metbod
JUS H.G8.415-1991 Reagents. So?ium hydroxide. Determination of total nitrogen content. Colorimetric method
JUS H.G8.447-1990 Reagents. Zine sulphate heptahydrate. Determination of total nitrogen content. Colorimetric method
JUS H.G8.489-1991 Reagents. Potassium permanganate. Determination of total nitrogen content. Colorimetric method
JUS H.G8.514-1991 Reagents. Potassium hydroxide. Determination of total nitrogen content. Colorimetric method

Indonesia Standards

SNI 13-6175-1999 Determination of total iron content as the impurities substances of mined goods sample 1,10-phenanthroline

SAE - SAE International

SAE AIR5925A-2013 Measurement Uncertainty Applied to Cost-Effective Testing

IN-BIS

IS 6120-1971 Test method for total dye content in food colorants