Sign In |Help & Support
ALL SECTORS
  • ALL SECTORS
  • GB(National Standard)
  • CB(Shipping)
  • CECS(Engineering Construction)
  • CJ(Urban Construction)
  • CY(News and Publication)
  • DB(Provincial Standard)
  • DL(Electricity & Power)
  • DZ(Geology & Mineralogy)
  • FZ(Spinning & Textile)
  • GA(Public Security)
  • HB(Aviation)
  • HG(Chemical Industry)
  • HJ(Environmental Protection)
  • JB(Machinery)
  • JC(Building Materials)
  • JG(Building & Construction)
  • JJ(Metering)
  • JT(Highway & Transportation)
  • LY(Forestry)
  • MT(Coal)
  • NB(Energy)
  • NY(Agriculture)
  • QB(Light Industry)
  • QC(Automobile & Vehicle)
  • QJ(Aerospace)
  • SH(Petrochemical)
  • SJ(Electronics)
  • SL(Water Resources)
  • SN(Commodity Inspection)
  • SY(Oil & Gas)
  • TB(Railway & Train)
  • YB(Ferrous Metallurgy)
  • YC(Tobacco)
  • YD(Telecommunication)
  • YY(Medical Device)
Database: 365,228(8 Aug 2026)

Amorphous preparation method

Amorphous preparation method, Total:37 items.

The international standard classification for "Amorphous preparation method" includes: Semiconducting materials , Testing of metals , Optics and optical measurements in general , Measurement of electrical and magnetic quantities .

The Chinese standard classification for "Amorphous preparation method" includes: Metal physical property test method , Semimetal and semiconductor material in general , Material and component for instrument and meter .


Group Standards of the People's Republic of China

  • T/CSAE 58-2017 Test method for estimating average grain size of microalloying non-quenched and tempered steel and its products

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
  • GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
  • GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
  • GB/T 16863-1997 Method for testing refractive index of crystals

国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 19346.3-2021 Methods of measurement of amorphous and nanocrystalline alloys-Part 3:AC magnetic properties of Fe-based amorphous strip using a single sheet specimen

Japanese Industrial Standards Committee (JISC)

  • JIS H 7151:1991 Method of determining the crystallization temperatures of amorphous metals
  • JIS H 7153:1991 Measuring method for high frequency core loss in amorphous magnetic cores
  • JIS C 8934:1995 Measuring method of output power for amorphous solar cells
  • JIS C 8935:1995 Measuring method of output power for amorphous solar modules
  • JIS H 7152:1996 Methods of measurement of the magnetic properties of amorphous metals by means of a single sheet tester
  • JIS C 7030:1993 Measuring methods for transistors
  • JIS C 8936:1995 Measuring methods of spectral response for amorphous solar cells and modules
  • JIS C 8935 AMD 1:2005 Measuring method of output power for amorphous solar modules (Amendment 1)
  • JIS C 8934 AMD 1:2005 Measuring method of output power for amorphous solar cells (Amendment 1)
  • JIS C 8940:1995 Outdoor measuring method of output power for amorphous solar cells and modules
  • JIS C 8938:1995 Environmental and endurance test methods for amorphous solar cell modules

Korean Agency for Technology and Standards (KATS)

  • KS D 0069-2002(2022) Method of determining the crystallization temperatures of amorphous metals
  • KS D 0069-2022 Method of determining the crystallization temperatures of amorphous metals
  • KS D 0069-2002(2017) Method of determining the crystallization temperatures of amorphous metals
  • KS D 0069-2002 Method of determining the crystallization temperatures of amorphous metals
  • KS C 6024-2002 MEASURING METHODS FOR TRANSISTORS

GOST

  • GOST 25734-1983 Alumina. Method for the crystallooptic determination of monocrystals in non metallurgical alumina

RO-ASRO

  • STAS 11437-1980 UNI.IONCTION TRANSISTORS Methods de test
  • STAS 6693/2-1975 Semiconductor devices TRANSISTORS Methods for measuring electrical properties
  • STAS 12124/1-1982 Semiconductor devices BIPOLAR TRANZISTORS Methods for measuring electrical static parameters
  • STAS 12124/3-1983 Semiconductor devices FIFL D-EFFECT TRANZISTORS Methods for measuring electrical static parameters
  • STAS 12124/4-1983 Semiconductor devices FIELD-EFECT TRANZISTORS Methods for measuring electrical static parameters

CZ-CSN

  • CSN 35 8759-1977 Semiconductor devices. Transistors. Methods of measurement of switching times
  • CSN 35 8752-1976 Semiconductor devices. Transistors. Measuring methods for common base output capacitance.
  • CSN 64 0209-1974 Preparation of test specimens of amorphous crmoplastic materials with a defined levcl l shrinkage
  • CSN 35 8757 Cast.9-1986 Transistors. Methods for measurement of thermal resistance

PL-PKN

European Committee for Standardization (CEN)

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

SCC

  • BS 2782-9 METHOD 940B:1981 Methods of testing plastics. Sampling and test specimen preparation-Preparation of test specimens of amorphous thermoplastic moulding material with a defined level of shrinkage in the form of rectangular plates by injection moulding