Insulated Gate Bipolar Transistor
Insulated Gate Bipolar Transistor, Total:25 items.
The international standard classification for "Insulated Gate Bipolar Transistor" includes: Semiconductor devices in general , Transistors .
The Chinese standard classification for "Insulated Gate Bipolar Transistor" includes: Power semiconductor device and parts , Semiconductor triode .
工业和信息化部
- QC/T 1136-2020 Environmental test requirements and test methods of insulated-gate bipolar transistors (IGBT) module for electric vehicles
Professional Standard - Machinery
- JB/T 8951.2-1999 Insulated Gate Bipolar Transistor Modules Arm and Pair of Arms
- JB/T 8951.1-1999 Insulated Gate Bipolar Transistor
Group Standards of the People's Republic of China
- T/CES 084-2021 Test specification for application reliability of insulated-gate bipolar transistor (IGBT) modules for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
- T/CEC 155-2018 General requirements for crimp-type insulated-gate bipolar transistor (IGBT) devices for flexible power transmission
- T/ZSA 237-2024 Technical specification for insulated-gate bipolar transistors (IGBT) for electric vehicles
- T/CES 085-2021 Test specification of high temperature reverse bias for press pack insulated-gate bipolar transistor modules
- T/FSI 121-2023 Silicone Gels for Insulated Gate Bipolar Transistors
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 17008-1997 Terminology and letter symbols for insulated-gate bipolar transistor
- GB/T 29332-2012 Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT)
- GB/T 17007-1997 Measuring methods for insulated-gate bipolar transistor
SCC
- BS IEC 60747-9:1998 Semiconductor devices. Discrete devices-Insulated-gate bipolar transistors (IGBTs)
- IEC 60747-9:1998+AMD1:2001 CSV Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- IEC 60747-9:1998/AMD1:2001 Amendment 1 - Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- 04/30113287 DC IEC 60747-9 ED.2. Semiconductor devices. Discrete devices. Part 9. Insulated gate bipolar transistors (IGBTS)
- 05/30135225 DC IEC 60749-9 ED 2. Semiconductor devices. Discrete devices. Part 9. Insulated-gate bipolar transistors (IGBTs)
British Standards Institution (BSI)
- BS IEC 60747-9:2019 Semiconductor devices - Discrete devices. Insulated-gate bipolar transistors (IGBTs)
- BS IEC 60747-9:2007 Semiconductor devices - Discrete devices - Insulated-gate bipolar transistors (IGBTs)
International Electrotechnical Commission (IEC)
- IEC 60747-9:2019 Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
- IEC 60747-9:2007 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- IEC 60747-9:1998 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- IEC 60747-9/AMD1:2001 Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1
KR-KS
- KS C IEC 60747-9-2024 Semiconductor devices — Part 9: Discrete devices — Insulated-gate bipolar transistors(IGBTs)
GSO
- GSO IEC 60747-9:2014 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
- OS GSO IEC 60747-9:2014 Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors (IGBTs)
