gb/t 24581-2009 Test method for measuring the content of group III and V impurities in silicon single crystals by low-temperature Fourier transform infrared spectroscopy
gb/t 24581-2009 Test method for measuring the content of group III and V impurities in silicon single crystals by low-temperature Fourier transform infrared spectroscopy, Total:4 items.
The international standard classification for "gb/t 24581-2009 Test method for measuring the content of group III and V impurities in silicon single crystals by low-temperature Fourier transform infrared spectroscopy" includes: Testing of metals , Semiconducting materials .
The Chinese standard classification for "gb/t 24581-2009 Test method for measuring the content of group III and V impurities in silicon single crystals by low-temperature Fourier transform infrared spectroscopy" includes: Semimetal and semiconductor material analysis method , Semimetal and semiconductor material in general .
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
- GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon―Low temperature fourier transform infrared spectrometry
