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Database: 365,228(8 Aug 2026)
single crystal silicon low temperature fourier transform low temperature fourier transform single crystal room temperature resistivity low temperature conditions polysilicon enterprise scopethis standard electric measuring instruments eutectic alsi-re alloy scopethis standard
GB/T 35306-2023 in English

GB/T 35306-2023 in English

VALID

Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method

  • Issued on:2023-08-06
  • Implemented on:2024-03-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $170.00
$165.00
Standard No: GB/T 35306-2023
Document status: VALID
Title in English: Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method
Title in Chinese: 硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2023-08-06
Implemented on: 2024-03-01
Superseding: GB/T 35306-2017 Test method for carbon and oxygen content of single crystal silicon―Low temperature fourier transform infrared spectrometry
ICS Classification: 77.040-Testing of metals
Chinese Classification: H17-Semimetal and semiconductor material analysis method
Professional Classification: GB-National Standard
Related Keywords: single crystal silicon low temperature fourier transform
low temperature fourier transform
single crystal
room temperature resistivity
low temperature conditions
Related Topics: carbon oxygen
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oxygen content
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gb/t 35306

《GB/T 35306-2023硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC2(全国半导体设备和材料标准化技术委员会材料分会)执行,主管部门为国家标准委。


Introduction

1. Background and significance of standard formulation

GB/T 35306-2023 is the latest national standard for the determination of carbon and oxygen content in silicon single crystals, replacing the original GB/T 35306-2017. The new standard has been comprehensively optimized in terms of method principles, scope of application and technical requirements to meet the increasingly stringent demand of the semiconductor industry for high-purity silicon materials.

2. Comparison of standard frameworks

Standard items GB/T 35306—2017 GB/T 35306—2023
Scope of application n-type silicon single crystal with room temperature resistivity greater than $1\Omega\cdot\mathrm{cm}$ n-type silicon single crystal with room temperature resistivity greater than $1\Omega\cdot\mathrm{cm}$ and p-type silicon single crystal with room temperature resistivity greater than $3\Omega\cdot\mathrm{cm}$
Method principle Based on Fourier transform infrared spectroscopy Optimized the spectrum acquisition and processing technology under low temperature conditions
Lower detection limit $2.5\times10^{14}~\mathrm{cm}^{-3}$ By improving the reference sample preparation method, the lower detection limit was reduced to $1\times10^{14}~\mathrm{cm}^{-3}$

3. Practical application case analysis

Take a semiconductor company as an example, the application of the new standard has significantly improved the detection accuracy. By using a low temperature Fourier transform infrared spectrometer, the company has achieved real-time monitoring of the carbon and oxygen content in silicon single crystals during the production process to ensure that product quality meets international standards.

4. Analysis of Technological Evolution

From GB/T 35306—2017 to GB/T 35306—2023, the main technical improvements include:

  • Wavenumber range expansion: from $270~\mathrm{cm}^{-1}$ to $1250~\mathrm{cm}^{-1}$ to $270~\mathrm{cm}^{-1}$ to $1250~\mathrm{cm}^{-1}$
  • Improved sample preparation requirements: emphasizing double-sided mirror polishing technology to reduce the impact of surface defects on test results
  • Data processing optimization: introducing area method calculation to effectively reduce baseline noise interference

5. Implementation Suggestions

To ensure the effective implementation of the new standard:

  1. Equipment selection: Select a low-temperature Fourier transform infrared spectrometer that meets the requirements to ensure that its resolution and wavenumber range meet the test requirements.
  2. Sample preparation: Double-sided polishing is carried out in strict accordance with the standard requirements to avoid oxide layer and surface damage.
  3. Data processing: The area method is used to calculate the substitutional carbon and interstitial oxygen content to ensure the accuracy and reliability of the results.
  4. Quality control: Establish an internal quality control system, calibrate the instrument regularly and verify the accuracy of the test method.

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