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Database: 365,228(8 Aug 2026)
single crystal silicon ― low temperature fourier transform oxygen content low-temperature fourier transform test method single crystals narrow band orthogonal frequency division multiplexing power line methyl chlorpyrifos [ max bit rate depending
GB/T 35306-2017 in English

GB/T 35306-2017 in English

SUPERSEDED

Test method for carbon and oxygen content of single crystal silicon―Low temperature fourier transform infrared spectrometry

  • Issued on:2017-12-29
  • Implemented on:2018-07-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00
Standard No: GB/T 35306-2017
Document status: SUPERSEDED
Superseded by: GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method
Superseded on: 2024-03-01
Title in English: Test method for carbon and oxygen content of single crystal silicon―Low temperature fourier transform infrared spectrometry
Title in Chinese: 硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2017-12-29
Implemented on: 2018-07-01
ICS Classification: 77.040-Testing of metals
Chinese Classification: H17-Semimetal and semiconductor material analysis method
Professional Classification: GB-National Standard
Related Keywords: single crystal silicon ― low temperature fourier transform
oxygen content
low-temperature fourier transform
test method
single crystals
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gb/t 35306

《GB/T 35306-2017硅单晶中碳、氧含量的测定 低温傅立叶变换红外光谱法》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC2(全国半导体设备和材料标准化技术委员会材料分会)执行,主管部门为国家标准化管理委员会。


Introduction

This standard provides a method for determining the carbon and oxygen content in silicon single crystals using low-temperature Fourier transform infrared spectroscopy. The procedure outlines the principles, equipment requirements, and operational steps necessary for accurate measurement. It specifies the conditions under which the analysis should be conducted to ensure consistency and reliability. The standard also includes details on sample preparation, calibration procedures, and data interpretation. It serves as a reference for laboratories involved in the analysis of silicon materials, ensuring that measurements are performed in a standardized manner. The method is applicable to silicon single crystals used in semiconductor manufacturing and related industries.

*** Please note: This description may not be accurate, please refer to the official documentation.

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