GB/T 31225-2014 in English
VALIDTest method for the thickness of silicon oxide on Si substrate by ellipsometer
- Issued on:2014-09-30
- Implemented on:2015-04-15
- File Format:PDF
- Delivery:Via email within 1~3 business days
$127.00
《GB/T 31225-2014椭圆偏振仪测量硅表面上二氧化硅薄层厚度的方法》由TC279(全国纳米技术标准化技术委员会)归口,主管部门为中国科学院。
本标准给出了使用连续变波长、变角度的光谱型椭圆偏振仪测量硅表面上二氧化硅薄层厚度的方法。
本标准适用于测试硅基底上厚度均匀、各向同性、10nm~1000nm 厚的二氧化硅薄层厚度,其他对测试波长处不透光的基底上单层介电薄膜样品厚度测量可以参考此方法。
Scope
This standard provides a method for measuring the thickness of a thin silicon dioxide layer on a silicon surface using a spectral ellipsometer with continuously variable wavelength and variable angle. This standard is suitable for testing the thickness of silicon dioxide thin layer with uniform thickness, isotropy, 10nm~1000nm thick on the silicon substrate. Other single-layer dielectric film samples on the substrate that are opaque at the test wavelength can be measured. Refer to this method.

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