GB/T 32999-2016 in English

《GB/T 32999-2016表面化学分析 深度剖析 用机械轮廓仪栅网复型法测量溅射速率》由TC38（全国微束分析标准化技术委员会）归口，TC38SC2（全国微束分析标准化技术委员会表面化学分析分会）执行，主管部门为国家标准化管理委员会。

Scope

This standard specifies the method for determining the ion sputtering rate of deep profiling by using Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). The ion sputtering area of the sample ranges from 0.4 mm² to 3.0 mm². This standard is only applicable to laterally uniform non-phase materials or single-layer materials. The ion sputtering rate is determined by the sputtering depth and sputtering time. The sputtering depth is measured by a mechanical probe profiler. This standard provides a method for converting ion sputtering time to sputtering depth in depth profiling, assuming a constant sputtering rate. This method was not designed for scanning probe microscopy and therefore the method cannot be evaluated with scanning probe microscopy. This method is not suitable for the case where the sputtered area is less than 0.4 mm ², nor is it suitable for the case where the sputter-induced surface roughness is significant compared with the sputtered depth of the measured area.