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silicon tetrachloride indicators semiconductor indicators test methods sicl4purity electronic industry introduction analysis standard test items optical key technical indicators general methods iso gas connections platinum amount
GB/T 38867-2020 in English

GB/T 38867-2020 in English

VALID

Silicon tetrachloride for electronic industry

  • Issued on:2020-07-21
  • Implemented on:2021-02-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $210.00
$204.00

《GB/T 38867-2020电子工业用四氯化硅》由TC203(全国半导体设备和材料标准化技术委员会)归口,TC203SC1(全国半导体设备和材料标准化技术委员会气体分会)执行,主管部门为国家标准化管理委员会。


Introduction

Analysis of the core technical requirements of the standard

Test items Optical fiber indicators Semiconductor indicators Test methods
SiCl4Purity ≥99.9% ≥99.99% Gas chromatography
Total amount of metal impurities ≤1.00μg/kg ≤0.50μg/kg ICP-MS
Infrared transmittance 3666cm-1≥98% Not applicable FTIR

Detailed explanation of key technical indicators

The standard innovatively adopts a graded control model: the metal impurity requirements for silicon tetrachloride for semiconductors are 50% stricter than those for optical fibers, where (B+Al)≤0.1μg/kg and (P+As)≤0.3μg/kg. Purity detection is calculated by formula (1): φ=100-(φ1+φ2+φ3)×10-4, and helium ionization gas chromatography (GB/T28726) is required.


Breakthrough in detection method

Metal impurities are detected using inductively coupled plasma mass spectrometry (ICP-MS): After the sample is evaporated and concentrated by the pretreatment device shown in Figure 1, the residue is dissolved with 2% nitric acid in a Class 1000 ultra-clean environment. Critical control points include:

  • Blank value control: All utensils need to be soaked in nitric acid for 12 hours
  • Recovery rate verification: 75%-125%
  • Precision requirement: RSD<20%

Standard implementation suggestions

1. Use stainless steel welded gas cylinders (GB/T32566) for packaging and perform internal surface treatment
2. The sampling process strictly follows the moisture-proof requirements of GB/T6680
3. Establish an exhaust gas treatment system to prevent SiCl4 hydrolysis contamination
4. The relative humidity of the storage environment should be <45%

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