GB/T 39131-2020 in English
VALIDTerms and definitions of synthetic crystal materials
- Issued on:2020-10-11
- Implemented on:2021-09-01
- File Format:PDF
- Delivery:Via email within 5 business days
Price(USD):
$430.00
$418.00
$418.00
《GB/T 39131-2020人工晶体材料术语》由TC461(全国人工晶体标准化技术委员会)归口,主管部门为中国建筑材料联合会。
Introduction
Standard Framework and Technology Evolution
GB/T39131-2020, as my country's first systematic terminology standard for artificial crystal materials, has established a terminology system covering three dimensions: crystal structure, growth method, and defect characterization. Compared with ISO 18473:2015, 12 new Chinese-specific material terms such as rare earth crystal and quantum dot crystal have been added.
Core Terminology Analysis
| Term Classification | Key Definition | Technical Characteristics |
|---|---|---|
| Semiconductor Crystal | Conductive Performance is Between Conductors and Insulators | Band Gap 0.2-3.5eV |
| Bridgeman Method | Solidification Growth through Temperature Gradient Zone | Applicable to Materials with Melting Point <2000℃ |
| Dislocation Density | Total Length of Dislocation Lines per Unit Volume | <103cm-2 is a high-quality crystal |
Comparison of growth methods
Czochralski method and floating zone method Typical application differences:
- The Czochralski method is the preferred method for growing silicon single crystals (up to 300mm in diameter)
- The floating zone method is used for refractory oxides (no crucible pollution)
- The ammonothermal method (equilibrium vapor pressure) is suitable for gallium nitride
Implementation suggestions
- Material research and development should give priority to the use of standard defined crystal system, point group and other structural descriptions
- Test reports must use standardized defect terms such as growth streaks and envelopes
- Processing parameters should refer to the tolerance requirements in Chapter 6
Sample only — not a preview of GB/T 39131-2020

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