GB/T 7576-2026 in English
TO BE VALIDDiscrete semiconductor devices—Blank detail specification for high power bipolar transistors
- Issued on:2026-03-31
- Implemented on:2026-10-01
- File Format:PDF
- Delivery:Via email within 5 business days
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| Standard No: | GB/T 7576-2026 |
| Document status: | TO BE VALID |
| Title in English: | Discrete semiconductor devices—Blank detail specification for high power bipolar transistors |
| Title in Chinese: | 半导体分立器件 大功率双极型晶体管空白详细规范 |
| Language: | English |
| File Format: | Electronic (PDF) |
| Delivery: | Via email within 5 business days |
| Issued on: | 2026-03-31 |
| Implemented on: | 2026-10-01 |
| Superseding: |
GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification |
| ICS Classification: | 31.080.30-Transistors |
| Chinese Classification: | L40-Semiconductor discrete devices in general |
| Professional Classification: | GB-National Standard |
《GB/T 7576-2026半导体分立器件 大功率双极型晶体管空白详细规范》由TC78（全国半导体器件标准化技术委员会）归口，TC78SC1（全国半导体器件标准化技术委员会半导体分立器件分会）执行，主管部门为工业和信息化部（电子）。
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