GB/T 8758-2006 in English
VALIDMeasuring thickness of epitaxial layers of gallium arsenide by infrared interference
- Issued on:2006-07-18
- Implemented on:2006-11-01
- File Format:PDF
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本标准适用于砷化镓外延层厚度的测量,测量厚度大于2μm。要求衬底材料的电阻率小于0.02Ω·cm,外延层的电阻率大于0.1Ω·cm。
Scope
This standard applies to the measurement of gallium arsenide epitaxial layer thickness, and the measured thickness is greater than 2 μm. It is required that the electronegativity of the substrate material is less than 0.02Ω•cm, and the electronegativity of the epitaxial layer is greater than 0.1Ω•cm.

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