gallium-arsenide
gallium-arsenide, Total:42 items.
The international standard classification for "gallium-arsenide" includes: Semiconducting materials , Powder metallurgy , Chemical analysis of metals , Testing of metals in general , Testing of metals .
The Chinese standard classification for "gallium-arsenide" includes: Technical Management , Compound semiconductor material , Semimetal and semiconductor material in general , Semimetal , Rare metals and their alloys analysis method , Metallographic testing method , Metal physical property test method .
Professional Standard - Electron
- SJ 3244.5-1989 Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
- SJ/T 11497-2015 Test method for thermal stability testing of gallium arsenide wafers
- SJ 20844-2002 Test method for microzone homogeneity of semi-insulating monocrystal gallium arsenide
- SJ/T 11496-2015 Determination of boron concentration in gallium arsenide by infrared absorption
- SJ 3241-1989 Gallium arsenide single-crystal bar and wafer
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
- SJ 20842-2002 Test method for Ga/As ratio of surface of gallium arsenide
- SJ 3242-1989 Gallium arsenide epitaxy wafers
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 18032-2000 The inspecting method of AB microscopic defect in gallium arsenide single crystal
- GB/T 11094-2007 Horizontal bridgman grown gallium arsenide single crystal and cutting wafer
- GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
- GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices
- GB/T 25075-2010 Gallium arsenide single crystal for solar cell
- GB/T 11093-1989 Liquid encapaulated czochralski-grouwn gallium arsenide single crystals and As-cut slices
- GB/T 30856-2014 GaAs substrates for LED epitaxial chips
- GB/T 11094-1989 Boat-grown gallium arsenide single crystals and As-cut slices
- GB 8760-1988 Gallium arsenide single crystal－Determination of dislocation density
- GB/T 8760-2006 Gallium arsenide single crystal-determination of dislocation density
- GB/T 8760-1988 Gallium arsenide single crystal; Determination of dislocation density
- GB/T 20228-2006 Gallium arsenide single crystal
- GB/T 8758-1988 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
- GB/T 11094-2020 Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman method
- GB/T 20228-2021 Gallium arsenide single crystal
Military Standard of the People's Republic of China-General Armament Department
- GJB 7392-2011 General specification for GaInP
/GaAs/Ge solar cell for space application - GJB 1926-1994 Gallium Arsenide Single Crystal Material Specification
- GJB 10074-2021 Specification for gallium arsenide polishing discs
- GJB 5345-2004 Specification for gallium arsenide polishing discs
- GJB 3798A-2020 Gallium arsenide material defect map
- GJB 1927-1994 Gallium arsenide single crystal material testing method
- GJB 2833-1997 Gallium Arsenide Epitaxial Wafer Specifications
- GJB 5247-2004 General specification for gallium arsenide/germanium solar cells for space applications
- GJB 1927A-2021 Gallium arsenide single crystal material testing method
Taiwan Provincial Standard of the People's Republic of China
- CNS 13625-1995 Product Specifications for Round Polished Monocrystalline Gallium Arsenide Wafers
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 35305-2017 Monocrystalline gallium arsenide polished wafers for solar cell
RU-GOST R
- GOST 25948-1983 Monocrystal gallium arsenide and gallium phosphide. Measurement of specific electric resistance and hall-coefficient
American Society for Testing and Materials (ASTM)
- ASTM F418-77(1996)e1 Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements
- ASTM F1212-89(1996)e1 Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
- ASTM F1212-89(2002) Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers
Japanese Industrial Standards Committee (JISC)
- JIS H 1191:1991 Methods for chemical analysis of gallium arsenide
CZ-CSN
- CSN 34 5941-1984 Gallium arsenide and gallium phospide monocrystalline. Determination of resistivity and Hall coefficient
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification
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