SJ 20060-1992 in English

Name: SJ 20060-1992 English Version
Brand: China Standards Store
SKU: SJ20060-1992-EN
Availability: InStock
Rating: 4.9 (128 reviews)

VALID

Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120

Issued on:1992-11-19
Implemented on:1993-05-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $130.00
$127.00

Details of SJ 20060-1992
Sample PDF

Standard No:	SJ 20060-1992
Document status:	VALID
Title in English:	Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120
Title in Chinese:	半导体分立器件３ＤＧ１２０型ＮＰＮ硅高频小功率晶体管详细规范
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	1992-11-19
Implemented on:	1993-05-01
Chinese Classification:	A01-Technical Management
Professional Classification:	SJ-Electronics
Related Keywords:	discrete device-detail specification silicon npn high-frequency low power transistor specification device-detail
Related Topics:	high frequency conductivity high frequency conductivity Die Half Height npn conductivityhigh-frequency high frequency conductivity discrete device discrete device Semiconductor Discrete Devices vertical half height Semiconductor High Frequency Characteristics Silicon carbide for power semiconductor devices Silicon carbide power semiconductor device company Power semiconductor device breakdown voltage Semiconductor power device product execution What are the standards for power semiconductor devices? What are the power semiconductor devices?

More samples: YD/T 3934-2021 QC/T 942-2021 JC/T 2453-2018

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