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Database: 365,228(8 Aug 2026)

vertical half height

vertical half height, Total:111 items.

The international standard classification for "vertical half height" includes: Lathes , Aerospace electric equipment and systems , Semiconductor devices , Semiconductor devices in general .

The Chinese standard classification for "vertical half height" includes: Lathe , Furniture processing machinery , Technical management , Technical management , Technical management , Technical management , Semiconductor discrete devices in general , Technical Management , Technical management , Electronic components , Semiconductor triode , Container, tray and pallet .


Professional Standard - Machinery

  • JB/T 8481-1996 Vertical type multiple spindle semi-automatic lathes Technical conditions
  • JB/T 8481.1-1999 Vertical type multiple spindle semi-automatic lathes Accuracy inspection

工业和信息化部

  • SJ/T 1480-2016 Semiconductor discrete device 3CG130 type silicon PNP high frequency low power transistor detailed specification
  • JB/T 13581.1-2019 High-speed vertical machining centers-Part 1:Testing of the accuracy
  • SJ/T 1472-2016 Semiconductor discrete device 3CG110 type silicon PNP high frequency low power transistor detailed specification
  • JB/T 13581.2-2019 High-speed vertical machining centres-Part 2:Specifications
  • JB/T 13440-2018 Vertical drum high gradient magnetic separator
  • SJ/T 1477-2016 Semiconductor discrete device 3CG120 type silicon PNP high frequency low power transistor detailed specifications
  • SJ/T 1486-2016 Semiconductor discrete device 3CG180 type silicon PNP high frequency high back voltage low power transistor detailed specification

Group Standards of the People's Republic of China

Professional Standard - Light Industry

Professional Standard - Electron

  • SJ 20175-1992 Semiconductor discrete device - Detail specification for NPN silicon ultra-high frequency low-power transistor of Type 3DG918
  • SJ/T 11848-2022 Semiconductor discrete device 3DG2484 type NPN silicon high frequency low power transistor detailed specifications
  • SJ 20064-1992 Semiconductor discrete device.Detail specification for type QL71 Silicon single phase full wave bridge rectifier
  • SJ 20059-1992 Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG111
  • SJ 50033/160-2002 Semiconductor discrete devices Detail specification for type 3DG122 silicon UHF low-power transistor
  • SJ 50033/29-1994 Semiconductor discrete device-Detail specification for GaAs high-speed switching assembly for type EK20
  • SJ 20066-1992 SJ 2006 6-1992 Semiconductor discrete device - Detail specification for Type 2CL3 silicon high voltage rectifier stack
  • SJ 50033/67-1995 Semiconductor discrete device - Detail specification for Type 3DD103 high-voltage, low-frequency and high-power transistor
  • SJ 50033/75-1995 Semiconductor discrete devices-Detail specification for Type 3DG135 silicon ultra high frequency low-power transistor
  • SJ 50033/141-1999 Semiconductor discrete devices-Detail specification for Type 2EK150 GaAs high speed switching diode
  • SJ 50033/61-1995 Semiconductor discrete device - Detail specification for Type 3DK6547 high-voltage and power switching transistor
  • SJ 20060-1992 Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120
  • SJ 50033/154-2002 Semiconductor discrete devices Detail specification for type 3DG251 silicon UHF low-noise transistor
  • SJ 50033/95-1995 Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistor
  • SJ 50033/73-1995 Semiconductor discrete device Detail specification for type QL74 silicon single phase bridge rectifier
  • SJ/T 11849-2022 Detailed specifications for semiconductor discrete devices 3DG3500 and 3DG3501 type NPN silicon high-frequency low-power transistors
  • SJ 50033/103-1996 Semiconductor discrete devices - Detail specification for Type 3DA89 high-frequency power transistor
  • SJ 50033.50-1994 Semiconductor discrete device-Detail specification for type QL73 silicon three phase full wave bridge rectifier
  • SJ 50033/159-2002 Semiconductor discrete devices Detail specification for type 3DG142 silicon UHF low-noise transistor
  • SJ 50033/62-1995 Semiconductor discrete device - Detail specification for Type 3DK406 high-voltage and power switching transistor
  • SJ 50033/158-2002 Semiconductor discrete devices Detail specification for type 3DG44 silicon UHF low-noise transistor
  • SJ/T 11089-1996 Letter symbols for discrete semiconductor components
  • SJ 20065-1992 Semiconductor discrete device-Detail specification for Type QL72 silicon three phase full wave bridge rectifier
  • SJ 50033/93-1995 Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistor
  • SJ 50033/1-1994 Semiconductor discrete device-Detail specification for type 3DA150 high frequency and power transistor

Military Standard of the People's Republic of China-General Armament Department

  • GJB 33-1985 General Specification for Semiconductor Discrete Devices
  • GJB/Z 10-1989 Semiconductor discrete device series type spectrum
  • GJB 33/14A-2021 Semiconductor discrete device 3DG44 type silicon ultra-high frequency low noise transistor detailed specification
  • GJB 33B-2021 General Specification for Semiconductor Discrete Devices
  • GJB 33/001-1989 Blank detailed specification for high frequency low power transistors for semiconductor discrete devices
  • GJB 128-1986 Aerial photographic specification for military topographic mapping
  • GJB 3164-1998 Semiconductor discrete device packaging specifications
  • GJB 33/5A-2021 Detailed specifications for semiconductor discrete devices 2CL59K, 2CL60K, 2CL80K, and 2CL150K silicon high-voltage rectifier stacks
  • GJB 33A/14-2003 Semiconductor discrete device 3DG44 type silicon ultra-high frequency low noise transistor detailed specification
  • GJB 128B-2021 Semiconductor discrete device test methods
  • GJB 33/4A-2021 Detailed specifications for semiconductor discrete devices QL12300A, QL12300D and QL12300H type silicon single-phase bridge rectifiers

Professional Standard - Aerospace

  • QJ 10007/11-2008 Detail specification for 3DG182 type silicon high-frequency low-power high-backvoltage transistors for semiconductor discrete devices used in aerospace
  • QJ 1511A-1998 Semiconductor Discrete Devices - Specifications for Acceptance

未注明发布机构

  • GJB 9785-2020 Specification for vertical piston high-pressure air compressors for ships
  • GJB 128A-1997 Semiconductor discrete device test methods
  • GJB 33A-1997 General Specification for Semiconductor Discrete Devices

工业和信息化部/国家能源局

  • JB/T 13083.2-2017 High-speed numerical control vertical band sawing machine- Part 2:Specifications
  • JB/T 13083.1-2017 Hiigh-speed numerical control vertical band sawing machine-Part 1:Testing of the accuracy

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

Professional Standard - Goods and Materials

YU-JUS

  • JUS M.Z3.034-1980 Vertical steel tanks, for semi-embedded aboveground storage o) minerahoih

U.S. Military Regulations and Norms

RU-GOST R

  • GOST 18139-1972 Multi-spindle chuck vertical semiautomatic lathes. Basic dimensions
  • GOST 6820-1975 Semiautomatic multi-spindle vertical chucking lathes standards of accuracy
  • GOST 16025-1991 Semiautomatic vertical broaching machines. Basic parameters and dimensions. Standards of accuracy and rigidity

ETSI - European Telecommunications Standards Institute

SCC

  • ETSI TS 103 589-2018 Higher Order Ambisonics (HOA) Transport Format
  • MIL MIL-S-62292B-1993 SEMITRAILER,REFUSE COLLECTION:TEM AXLE,57 CUBIC METERS (75 CUBIC YARD), FOR USE WITH STATIONARY COMPACTORS , COMPACTOR,STATIONARY,2.7 CUBIC METERS (3.5 CUBIC YARD), FOR USE WITH REFUSE COLLECTION SEMITRAILERS (SUPERSEDING MIL-S-62292A)
  • CAN/CSA-C22.2 No.61029-2-8-2006(C2011) Safety of semi-stationary electric machine tools — Part 2: Particular rules for vertical single-spindle routers
  • DANSK DS/EN 153000:1999 General specification: Discrete pressure contact power semiconductor devices (Qualification approval)

IT-UNI

  • UNI 5554-1965 High-speed hand press vertical drilling machine. Glossary
  • UNI 7968-1979 Test conditions for machine tools. Turret or single spindle co-ordinate drilling machines with vertical spindle.

IN-BIS

  • IS 13640-1993 General introduction for milling machines with table of fixed height, with horizontal lkor vertical spindle

International Electrotechnical Commission (IEC)

  • IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices

GOST

  • GOST R 70022-2022 Opening elements of light-transparent structural constructions. General specifications
  • GOST R 70113-2022 Radius concave еndmilling catters. Base dimensions

European Committee for Electrotechnical Standardization(CENELEC)

  • EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices

CENELEC - European Committee for Electrotechnical Standardization

  • EN 60747-15:2004 Discrete semiconductor devices Part 15: Isolated power semiconductor devices

Association Francaise de Normalisation

  • NF C96-015*NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15 : isolated power semiconductor devices
  • NF EN 61029-2-8:2010 Sécurité des machines-outils électriques semi-fixes - Partie 2-8 : règles particulières pour les toupies monobroches verticales
  • NF ISO 3686-1:2000 Test conditions for high-precision coordinate single-spindle vertical drilling and boring machines with fixed height table - Accuracy check - Part 1: single-post machines

Lithuanian Standards Office

  • LST EN 153000-2001 Generic specification. Discrete pressure contact power semiconductor devices (Qualification approval)

International Organization for Standardization (ISO)

  • ISO 2773:2023 Test conditions for pillar type vertical drilling machines
  • ISO/FDIS 2773:2018 Test conditions for pillar type vertical drilling machines — Testing of the accuracy
  • ISO 2773:2024 Test conditions for pillar type vertical drilling machines — Testing of accuracy
  • ISO/DIS 2773 Test conditions for pillar type vertical drilling machines — Testing of the accuracy

British Standards Institution (BSI)

  • BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
  • BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
  • BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
  • BS 6493-1.1:1984 Semiconductor devices - Part 1: Discrete devices - Section 1.1 General
  • BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors

TH-TISI

Danish Standards Foundation

  • DS/EN 153000:1999 General specification: Discrete pressure contact power semiconductor devices (Qualification approval)

Korean Agency for Technology and Standards (KATS)

ES-AENOR

GOSTR

  • GOST R 59067-2020 Trunk pipeline transport of oil and oil products. Vertical semi-submersible pumps. General specifications

SE-SIS

Japanese Industrial Standards Committee (JISC)

Association of German Mechanical Engineers