SJ 50033/159-2002 in English

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Standard No:	SJ 50033/159-2002
Document status:	VALID
Title in English:	Semiconductor discrete devices Detail specification for type 3DG142 silicon UHF low-noise transistor
Title in Chinese:	半导体分立器件 3DG142型硅超高频低噪声晶体管详细规范
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2002-10-30
Implemented on:	2003-03-01
Chinese Classification:	L40-Semiconductor discrete devices in general
Professional Classification:	SJ-Electronics
Related Keywords:	discrete devices detail specification silicon uhf low-noise transistor specification detail uhf
Related Topics:	Ultra Low Molecular Weight Monomer sj 50033 150-2002 Die Half Height semiconductor on-wafer noise low frequency noise maker UHF Low frequency noise of the instrument exosomes, low-frequency ultrasound semiconductor ultrasound low-dimensional conductor discrete device superconducting high frequency cavity discrete device Semiconductor Discrete Devices low dimensional crystal vertical half height Semiconductor High Frequency Characteristics How to distinguish high and low frequency cards How to distinguish high frequency and low frequency noise Ultrasonic system capillary noise current Semiconductor Devices Discrete Devices Part 8-2: Superjunction Metal Oxide Semiconductor Field Effect Transistor Blank Details

本规范规定了3DG142型硅超高频低噪声晶体管的详细要求。本规范适用于器件的研制、生产和采购。

More samples: QC/T 942-2021 JJG 21-2008 NB/T 47013.2-2015

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