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Database: 365,228(8 Aug 2026)

Semiconductor Discrete Devices

Semiconductor Discrete Devices, Total:218 items.

The international standard classification for "Semiconductor Discrete Devices" includes: Semiconductor devices in general , Semiconductor devices , Components for aerospace construction , Optoelectronics. Laser equipment , Aerospace electric equipment and systems , Diodes .

The Chinese standard classification for "Semiconductor Discrete Devices" includes: Semiconductor discrete devices in general , Semiconductor triode , Electronic components , Optoelectronic device assembly , Technical Management , Technical management , Technical management , Technical management , Technical management , Technical management , Technical management , Technical management , Semiconductor diode .


General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 11499-2001 Letter symbols for discrete semiconductor devices
  • GB/T 12560-1999 Semiconductor devices --Sectional specification for discrete devices
  • GB/T 249-1989 The rule of type designation for discrete semiconductor
  • GB/T 7581-1987 of outlines for semiconductor discrete devices
  • GB/T 43366-2023 General specification for discrete semiconductor devices of space application
  • GB/T 15651.3-2003 Discrete semiconductor devices and integrated circuits - Part 5-3: Optoelectronic devices - Measuring methods

Military Standard of the People's Republic of China-General Armament Department

  • GJB 923A-2004 General specification for packages of semiconductor discrete devices
  • GJB 923B-2021 General Specification for Semiconductor Discrete Device Enclosures
  • GJB 128-1986 Aerial photographic specification for military topographic mapping
  • GJB 33B-2021 General Specification for Semiconductor Discrete Devices
  • GJB 128B-2021 Semiconductor discrete device test methods

Professional Standard - Aerospace

  • QJ 2502-1993 General specification for radiation hardened semiconductor discrete devices
  • QJ 787-1983 Semiconductor Discrete Devices - Specifications for Screening
  • QJ 1511A-1998 Semiconductor Discrete Devices - Specifications for Acceptance

Professional Standard - Electron

  • SJ 50033/67-1995 Semiconductor discrete device - Detail specification for Type 3DD103 high-voltage, low-frequency and high-power transistor
  • SJ 50033/59-1995 Semiconductor discrete device-Detail specification for Type 3DK39 power switching transistor
  • SJ 50033/121-1997 Semiconductor discrete devices-Detail specification for Type CS3458~CS3460 silicon N-channel junctioon mode field-effect transistors
  • SJ 20014-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power transistor for types 3CG110 GP, GT and types GCT classes
  • SJ 20069-1992 Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK76
  • SJ 50033/14-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK305 Power Switching Transistors
  • SJ 50033/93-1995 Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistor
  • SJ 20306-1993 Detail specification for Type FH181A NPN silicon power Darlington transistor
  • SJ 50033/161-2002 Semiconductor discrete device Detail specification for silicon voltage-regulator diode for type 2CW210~251
  • SJ 2850-1988 General specification for base, cap and lead frame of discrete semiconductor devices
  • SJ 50033/94-1995 Semiconductor discrete devices - Detail specification for Type 3DG143 NPN silicon high-frequency low-noise low-power transistor
  • SJ/T 10416-1993 Generic Apecification for chip for semiconductor discrete devices
  • SJ 50033/11-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK208 Power Switching Transistors
  • SJ 50033/29-1994 Semiconductor discrete device-Detail specification for GaAs high-speed switching assembly for type EK20
  • SJ 50033/170-2007 semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor
  • SJ 50033/73-1995 Semiconductor discrete device Detail specification for type QL74 silicon single phase bridge rectifier
  • SJ 20060-1992 Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG120
  • SJ 50033/172-2007 semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor
  • SJ 50033/2-1994 Semiconductor discrete device-Detail specification for type 3CK2904,3CK2904A,3CK2905 and 3CK2905A PNP silicon low-power switching transistor
  • SJ 50033.52-1994 Semiconductor discrete device-Detail specification for type CS0529 GaAs microwave power field effect transistor
  • SJ 50033/13-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK210 Power Switching Transistors
  • SJ 20274-1993 Semiconductor discrete devices Detail specificion for silicon switching diode for type 2CK84
  • SJ 50033/154-2002 Semiconductor discrete devices Detail specification for type 3DG251 silicon UHF low-noise transistor
  • SJ 50033.47-1994 Semiconductor discrete device - Detail specification for type 2CZ117 silicon rectifier diode
  • SJ 50033/98-1995 Semiconductor discrete devices-Detail specification for Type 2CJ4211 and 2CJ4212 step recovery diodes
  • SJ 50033/100-1995 Semiconductor discrete devices-Detail specification for Type 2CJ60 step recovery diodes
  • SJ 50033/92-1995 Semiconductor discrete devices-Detail specification for Type 3CD100 low-frequency and high-power transistor
  • SJ 50033.48-1994 Semiconductor discrete device - Detail specification for type 2DV8CP silicon microwave detector diode
  • SJ 50033/60-1995 Semiconductor discrete device-Detail specification for Type 3DK40 power switching transistor
  • SJ 50033.50-1994 Semiconductor discrete device-Detail specification for type QL73 silicon three phase full wave bridge rectifier
  • SJ 50033/152-2002 Semiconductor discrete devices Detail specification for type 2CK140 microwave switch diode
  • SJ 50033/97-1995 Semiconductor discrete devices - Detail specification for Type 2CJ4011, 2CJ4012, 2CJ4021 and 2CJ4022 step recovery diodes
  • SJ 20174-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2221,3DK2221A, 3DK2222 and 3DK2222A
  • SJ 50033/39-1994 Semiconductor discrete device-Detail specification for type 2CZ106 silicon switching rectifier diode
  • SJ 2851-1988 Discrete semiconductor devices--Detail specification for base and cap of low power transistors
  • SJ 50033/25-1994 Semiconductor discrete device-Detail specification for type 2CW1001~2CW1005 silicon voltage-regulator diode
  • SJ 50033/108-1996 Semiconductor discrete device - Detail specification for Gunn diodes for Type 2EY5671, 2EY5672
  • SJ 50033/167-2004 Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor
  • SJ 50033/148-2000 ~
  • SJ 20184-1992 Semiconductor discrete device-Detail specification for field-effect transistor of Types CS3821,3822,3823
  • SJ 20013-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS10. GP, GT and GCT classes
  • SJ 50033/141-1999 Semiconductor discrete devices-Detail specification for Type 2EK150 GaAs high speed switching diode
  • SJ 20309-1993 Detail specification for Type 3DK10 power switching transistor
  • SJ 50033/134-1997 Semiconductor discrete devices - Detail specification for Type 3DD167 low-frequency and high-power transistor
  • SJ 20063-1992 Semiconductor discrete device.Detail specification for silicon NPN ultra-high frequency low-noise dual-difference match transistor of type 3DG213
  • SJ 50033/90-1995 Semiconductor discrete devices - Detail specification for Type 3DK106 NPN silicon low-power switching transistor
  • SJ 20015-1992 Semiconductor discrete device.Detail specification for NPN silicon high-frequency low-power transistor for type 3DG130GP、GT and GCT classes
  • SJ 50033/75-1995 Semiconductor discrete devices-Detail specification for Type 3DG135 silicon ultra high frequency low-power transistor
  • SJ 50033/3-1994 Semiconductor discrete device - Detail specification for semiconductor opto-couplers for type GH21, GH22 and GH23 of GP, GT and GCT classes
  • SJ 20187-1992 Semiconductor discrete device - Detail specification for silicon rectifier diodes for Types 2CZ5550 through 2CZ5554
  • SJ 50033/63-1995 Semiconductor discrete device - Detail specification for Type 3CD020 low-frequency and high-power transistor
  • SJ 20065-1992 Semiconductor discrete device-Detail specification for Type QL72 silicon three phase full wave bridge rectifier
  • SJ 20186-1992 Semiconductor discrete device - Detail specification for silicon voltage regulate diodes for Types 2CW2970 ~ 3015
  • SJ 20168-1992 Semiconductor discrete device - Detail specification for Type 3DK12 power switching transistor
  • SJ 50033/27-1994 Semiconductor discrete device-Detail specification for GaAs varactor diodes for 2EC600 series
  • SJ 2853-1988 Discrete semiconductor devices--Detail specification for thread-hexagonal base and cap
  • SJ 50033/153-2002 Semiconductor discrete devices Detail specification for type 2CK141 microwave switch diode
  • SJ 50033/65-1995 Semiconductor discrete device - Detail specification for Type 3DD175 low-frequency and high-power transistor
  • SJ 20072-1992 Semiconductor discrete device-Detail specification for semiconductor opto-couplers for Type GH24,GH25 and GH26
  • SJ 20067-1992 Semiconductor discrete device.Detail specification for type 2CZ30 silicon rectifier diode
  • SJ 20176-1992 Semiconductor discrete device - Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440
  • SJ 20056-1992 Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK103
  • SJ 50033/31-1994 Semiconductor discrete device-Detail specification for type FH101 NPN silicon power Darlington transistor
  • SJ 50033/158-2002 Semiconductor discrete devices Detail specification for type 3DG44 silicon UHF low-noise transistor
  • SJ 50033/124-1997 Semiconductor discrete device - Detail specification for silicon power PIN diodes for Type PIN101~105
  • SJ 50033/70-1995 Semiconductor discrete device - Detail specification for Type PIN35 series for PIN diode
  • SJ 20061-1992 Semiconductor discrete device-Detail specification for silicon N-channel deplition mode field-effect transistor of Type CS146
  • SJ 20172-1992 Semiconductor discrete device - Detail specification for Type 3DK38 power switching transistor
  • SJ 20308-1993 Detail specification for Type FH1025 NPN silicon power Darlington transistor
  • SJ 50033/10-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK207 Power Switching Transistors
  • SJ 20178-1992 Semiconductor discrete device--Detail specification for Type 3CK38 power switching transistor
  • SJ 50033.55-1994 Semiconductor discrete device - Detail specification for type 2CK82 silicon switching diode
  • SJ 50033/117-1997 Semiconductor descrete devices - Detail specification for Type 2CKS38 silicon large current switch diode
  • SJ 50033/66-1995 Semiconductor discrete device-Detail specification for Type 3DD880 low-frequency and high-power transistor
  • SJ 50033/72-1995 Semiconductor discrete device - Detail specification for Type PIN323 series for PIN diode
  • SJ 50033/5-1994 Semiconductor discrete device-Detail specification for semiconductor yellow light emitting diodes for type GF311 of GP and GT classes
  • SJ 50033/81-1995 Semiconductor discrete devices-Detail specification for Type CS0524 GaAs microwave power FET
  • SJ 50033/129-1997 Semiconductor discrete devices-Detail specification for Type 3DD155 low-frequency and high-power transistor
  • SJ 50033/159-2002 Semiconductor discrete devices Detail specification for type 3DG142 silicon UHF low-noise transistor
  • SJ 50033/22-1994 Semiconductor discrete device-Detail specification for silicon tuning varactor diode for type 2CC51E
  • SJ 50033/156-2002 Semiconductor discrete devices Detail specification for type 3DA505 silicon microwave pulse power transistor
  • SJ 50033/62-1995 Semiconductor discrete device - Detail specification for Type 3DK406 high-voltage and power switching transistor
  • SJ 50033/23-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK309 Power Switching Transistors
  • SJ 50033/125-1997 Semiconductor discrete device - Detail specification for silicon PIN diodes for Type PIN11~15
  • SJ 50033.56-1994 Semiconductor discrete device-Detail specification for type 2CK85 silicon switching diode
  • SJ 20058-1992 Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK105
  • SJ 50033/157-2002 Semiconductor discrete devices Detail specification for type 3DA506 silicon microwave pulse power transistor
  • SJ 20188-1992 ~
  • SJ 50033/174-2007 semiconductro discrete devices detail specification for type 3da521 silicon microwave pulse power transistor
  • SJ 50033/17-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK308 Power Switching Transistors
  • SJ 50033/147-2000 Semiconductor optoelectronic devices Detail specification for type GF1121 Light-emitting diode indicate lamp
  • SJ 50033/130-1997 Semiconductor discrete devices-Detail specification for Type 3DD159 low-frequency and high-power transistor
  • SJ 20054-1992 Semiconductor discrete device-Detail specification for silicon NPN low power switching transistor of Type 3DK101
  • SJ 20185-1992 Semiconductor discrete device Detail specification for silicon voltage reference diodes for types 2DW232~236
  • SJ 20171-1992 Semiconductor discrete device - Detail specification for Type 3DK51 power switching transistor
  • SJ 50033/15-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK306 Power Switching Transistors
  • SJ 50033/162-2003 Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes
  • SJ 50033/146-2000 Semiconductor discrete devices Detail specification for type 3DA601 C band silicon bipolar power transistor
  • SJ/Z 9168-1995 Generic specifications for determination of discrete semiconductor devices used for VCR
  • SJ/T 10149-1991 Graphic base of electronic components graphics of semiconductor discrete device
  • SJ 2854-1988 Discrete semiconductor devices--Detail specification for lead frame of plastic package
  • SJ 50033/116-1997 Semiconductor discrete devices - Detail specification for Type 2CK29 silicon large current switch diode
  • SJ 50033/8-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK205 Power Switching Transistors
  • SJ 50033/16-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK307 Power Switching Transistors
  • SJ 50033/78-1995 Semiconductor discrete devices - Detail specification for Type CS0464 GaAs microwave FET
  • SJ 50033/155-2002 Semiconductor discrete devices Detail specification for type 3DG252 sillcon microwave linearity transistor
  • SJ 50033/115-1997 Semiconductor discrete devices - Detail specification for Type 2CK28 silicon large current switch diode
  • SJ 50033/82-1995 Semiconductor discrete devices - Detail specification for Type 3DK100 NPN silicon low-power switching transistor
  • SJ 50033/64-1995 Semiconductor discrete device-Detail specification for Type 3CD010 low-frequency and high-power transistor
  • SJ 50033/106-1996 Semiconductor discrete device - Detail specification for Type CS203 GaAs microwave low noise field effect transistor
  • SJ 50033/105-1996 Semiconductor discrete devices-Detail specification for Type 3DK404 power switching transistor
  • SJ 50033/168-2004 Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor
  • SJ 50033/175-2007 semiconductro discrete devices detail specification for type 3da522 silicon microwave pulse power transistor
  • SJ 50033/83-1995 Semiconductor discrete devices-Detail specification for Type CS139 silicon P-channel MOS enhancement mode field-effect transistor
  • SJ 50033.44-1994 Semiconductor dicrete device-Detail specification for type 2CZ105 silicon switching rectifier diode
  • SJ 50033/4-1994 Semiconductor discrete device-Detail specification for semiconductor red light emitting diodes for type GF111 of GP and GT classes
  • SJ 50033/33-1994 Semiconductor discrete device - Detail specification for type FH121 NPN silicon power Darlington transistor
  • SJ 20169-1992 Semiconductor discrete device - Detail specification for Type 3DK36 power switching transistor
  • SJ 50033/96-1995 Semiconductor discrete devices-Detail specification for Type 3DG216 NPN silicon low-power difference matched-pair transistor
  • SJ 50033/32-1994 Semiconductor discrete device - Detail specification for type 3DK312 power switching transistor
  • SJ 50033/69-1995 Semiconductor discrete device-Detail specification for Type PIN30 series for PIN diode
  • SJ 50033/37-1994 Semiconductor discrete device-Detail specification for type 3DD164 power transistor
  • SJ 50033/6-1994 Semiconductor discrete device-Detail specification for semiconductor green light emitting diodes for type GF411 of GP and GT classes
  • SJ 50033.53-1994 Semiconductor discrete device - Detail specification for type CS0530 and CS0531 GaAs microwave power field effect transistor
  • SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes
  • SJ 50033/131-1997 Semiconductor discrete devices - Detail specification for Type 3DD157 low-frequency and high-power transistor
  • SJ 50033/120-1997 Semiconductor discrete devices Detail specification for type CS205 GaAs microwave power field effect transistor
  • SJ 50033/12-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK209 Power Switching Transistors
  • SJ 50033/145-2000 Semiconductor discrete devices Detail specification for type 3DA503 silicon microwave pulse power transistor
  • SJ 50033/84-1995 Semiconductor discrete devices - Detail specification for Type CS140 silicon N-channel MOS deplition mode field-effect transistor
  • SJ 2849-1988 Construction dimensions for package parts of discrete semiconductor devices
  • SJ/T 10696-1996 Semiconductor discrete device - Detail specification for Type QL50 in use for automotive nine diodes bridge rectifying modules
  • SJ 50033/24-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK310 Power Switching Transistors
  • SJ 50033/122-1997 Semiconductor discrete devices-Detail specification for Type CS3684~CS3687 silicon N-channel junction mode field-effect transistors
  • SJ/T 9533-1993 Grading standard of quality for semiconductor discrete devices
  • SJ 50033/135-1997 Semiconductor discrete devices-Detail specification for Type 2CZ10 silicon switching rectifier diode
  • SJ 50033/88-1995 Semiconductor discrete devices-Detail specification for Type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor
  • SJ 2852-1988 Discrete semiconductor devices--Detail specfication for base and cap of high power transistors
  • SJ 50033/9-1994 Discrete Semiconductor Devices Detailed Specifications for 3DK206 Power Switching Transistors
  • SJ 50033/21-1994 Semiconductor discrete device-Detail specification for silicon switch-rectifier diode for type 2CZ75
  • SJ 50033/133-1997 Semiconductor discrete devices-Detail specification for Type SY5629~5665A tramsient voltage suppression diodes
  • SJ 20310-1993 Detail specification for Type 3DD101 power transistor
  • SJ 20066-1992 SJ 2006 6-1992 Semiconductor discrete device - Detail specification for Type 2CL3 silicon high voltage rectifier stack
  • SJ 50033/165-2003 Semiconductor discrete devices Detail specification for type PIN0003 PIN diode
  • SJ 50033/42-1994 Semiconductor discrete device - Detail specification for type CS0467 GaAs microwave FET
  • SJ 50033/28-1994 Semiconductor discrete device-Detail specification for stripline mixer diodes for 2CV334,2CV3338
  • SJ 20059-1992 Semiconductor discrete device-Detail specification for silicon NPN high-frequency low power transistor of Type 3DG111
  • SJ 20756-1999 Guideline for application of structrually similarity of discrete semiconductor devices
  • SJ 50033/119-1997 Semiconductor discrete devices-Detail specification for Type CS204 GaAs microwave power field effect transistor
  • SJ 50033/118-1997 Semiconductor discrete devices-Detail specification for Type 2EK31 GaAs switch diode
  • SJ 20011-1992 Semiconductor discrete device.Detail specification for silicon N-channel deplition mode field-effect transistor of type CS1 GP, GT and GCT classes
  • SJ 50033.46-1994 Semiconductor discrete device-Detail specification for type 2CZ59 silicon rectifier diode
  • SJ 50033/68-1995 Semiconductors discrete device - Detail specification for Type BT51 NPN-silicon small power difference matched-pair transistor
  • SJ 50033/149-2000 ~
  • SJ 50033/123-1997 Semiconductor discrete device - Detail specification for silicon power PIN diodes for Type PIN 62317
  • SJ 50033.54-1994 Semiconductor discrete device - Detail specification for type CS0532 GaAs microwave power field effect transistor
  • SJ 20062-1992 Semiconductor discrte device.Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of type 3DG210
  • SJ 50033.51-1994 Semiconductor discreted devices - Detail specification for type CS0558 GaAs microwave dual gate FET
  • SJ 50033/166-2004 Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor
  • SJ 50033/86-1995 Semiconductor discrete devices - Detail specification for Type CS5114~CS5116 silicon P-channel deplition mode field-effect transistor
  • SJ 50033/85-1995 Semiconductor discrete devices - Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistor
  • SJ 50033/91-1995 Semiconductor discrete devices-Detail specification for Type 3CD030 low-frequency and high-power transistor
  • SJ 20070-1992 Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK105
  • SJ 50033/30-1994 Semiconductor discrete device - Detail specification for type 3DD155 power transistor
  • SJ 50033/132-1997 Semiconductor discrete devices - Detail specification for Type 3DD260 low-frequency and high-power transistor
  • SJ 20181-1992 Semiconductor discrete device-Detail specification for reverse-blocking thyristor for Type 3CT107
  • SJ 50033/104-1996 Semiconductor discrete devices-Detail specification for Type 3DK002 power switching transistor
  • SJ 50033/77-1995 Semiconductor discrete devices - Detail specification for Type 3DA331 silicon microwave power transistor
  • SJ 20183-1992 Semiconductor discrete device-Detail specification for Type 3DD6 power transistor
  • SJ 50033/26-1994 Semiconductor discrete device - Detail specification for type 2CW1006~2CW1015 silicon voltage-regulator diode
  • SJ 20180-1992 Semiconductor discrete device-Detail specification for reverse-blocking thyristor for Type 3CT105
  • SJ 50033/160-2002 Semiconductor discrete devices Detail specification for type 3DG122 silicon UHF low-power transistor
  • SJ 50033/163-2003 Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors
  • SJ 50033/89-1995 Semiconductor discrete devices-Detail specification for Type CS6768 and CS6770 silicon N-channel enhancement mode field effect transistor
  • SJ 20173-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power switching transistor of Types 3DK2218,3DK2218A, 3DK2219 and 3DK2219A
  • SJ 50033/176-2007 semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistor
  • SJ 20071-1992 Semiconductor discrete device.Detail specification for silicon switching diode for type 2CK4148
  • SJ 50033/1-1994 Semiconductor discrete device-Detail specification for type 3DA150 high frequency and power transistor
  • SJ 50033/76-1995 Semiconductor discrete devices - Detail specification for Type 3DG218 silicon microwave low-noise transistor
  • SJ 50033/169-2004 Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor
  • SJ 20233-1993 Verification regulation of model IMPACT-II semiconductor discrete device test sysytem
  • SJ 20307-1993 Detail specification for Type FH646 NPN silicon power Darlington transistor
  • SJ 50033/38-1994 Semiconductor discrete device - Detail specification for types CS4856~CS4861 silicon N-channel deplition mode field-effect transistor
  • SJ 50033/151-2002 Semiconductor discrete device Detail specification for low-noise silicon voltage-regulator diodes for types 2DW14~18
  • SJ 50033/34-1994 Semiconductor discrete device-Detail specification for type FH129 NPN silicon power Darlington transistor
  • SJ 50033/36-1994 Semiconductor discrete device-Detail specification for type 3CD050 power transistor
  • SJ 50033/164-2003 Semiconductor discrete devices Detail specification for type PIN0002 PIN diode
  • SJ 50033/61-1995 Semiconductor discrete device - Detail specification for Type 3DK6547 high-voltage and power switching transistor
  • SJ 50033/71-1995 Semiconductor discrete device-Detail specification for Type PIN342 series for PIN diode
  • SJ 50033/74-1995 Semiconductor discrete devices-Detail specification for Type 3DA325 silicon microwave power transistor
  • SJ 20057-1992 Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK104
  • SJ/T 11089-1996 Letter symbols for discrete semiconductor components
  • SJ 50033/80-1995 Semiconductor discrete devices-Detail specification for Type CS0513 GaAs microwave power FET
  • SJ 20055-1992 Semiconductor discrete device--Detail specification for silicon NPN low power switching transistor of Type 3DK102
  • SJ 20068-1992 Semiconductor discrete device.Detail specification for lower noise for silion voltage reference diode for type 2DW 14~18
  • SJ 50033/87-1995 Semiconductor discrete devices-Detail specification for Type CS4091~CS4093 silicon N-channel deplition mode field-effect transistor
  • SJ 50033/95-1995 Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistor
  • SJ 20064-1992 Semiconductor discrete device.Detail specification for type QL71 Silicon single phase full wave bridge rectifier
  • SJ 50033/103-1996 Semiconductor discrete devices - Detail specification for Type 3DA89 high-frequency power transistor
  • SJ 20175-1992 Semiconductor discrete device - Detail specification for NPN silicon ultra-high frequency low-power transistor of Type 3DG918
  • SJ/T 10585-1994 Semiconductor discrete device Dimensions of outline and lead-frame for the surface mounting device
  • SJ 50033/126-1997 Semiconductor discrete devices-Detail specification for Type 2DK13 SCHOTTKY silicon switching rectifier diode

Shaanxi Provincial Standard of the People's Republic of China

  • DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices
  • DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices