indirect semiconductor absorption
indirect semiconductor absorption, Total:220 items.
The international standard classification for "indirect semiconductor absorption" includes: Aerospace electric equipment and systems , Plug-and-socket devices. Connectors , Rectifiers. Convertors. Stabilized power supply , Testing of metals , Integrated circuits. Microelectronics , Chemical analysis of metals .
The Chinese standard classification for "indirect semiconductor absorption" includes: Electronic components , Connector , Power semiconductor device and parts , Dedicated processing equipment , Metal physical property test method , Semiconductor integrated circuit , Semimetal and semiconductor material analysis method .
Professional Standard - Electron
- SJ 2433-1984 Bonding sheet for semiconductor tubes
- SJ 20642.1-1998 Semiconductor opto-electronic module - Detail specification for Type GD81 PIN-FET opto-receiver module
- SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
- SJ 20642.2-1998 Semiconductor opto-electronic module - Detail specification for Type GD82 PIN-FET opto-receiver module
- SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
- SJ/T 10139-1991 Detail specification for electronic components--Semiconductor integrated circuits--CC4028 CMOS 4-line to 10-line decoder
- SJ 50597/45-1997 Semiconductor integrated circuits-Detail specification for Types JJ55107,JJ55108,JJ55113,JJ55114 and JJ55115 linear drivers and receivers
- SJ/T 10290-1991 Medium-frequency transformers for use in semiconductor frequency modulation broadcast receivers
- SJ 1619-1980 Intermediate-frequency tranformers and adjustable inductance coils for transistorized black and white television receiver
- SJ 20642.3-1998 Semiconductor opto-electronic module - Detail specification for Type GD83 PIN-FET opto-receiver module
- SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources
Professional Standard - Aerospace
- QJ 1908A-1998 Acceptance Uncovering Check Method of Semiconductor Devices
- QJ 1511A-1998 Semiconductor Discrete Devices - Specifications for Acceptance
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 3859.4-2004 Semiconductor converter - Self-commutated semiconductor converters including direct d.c.converters
- GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
- GB/T 20870.10-2023 Semiconductor devices—Part 16-10: Technology Approval Schedule for monolithic microwave integrated circuits
- GB/T 15872-2013 Power supply interface for semiconductor equipment
- GB/T 7677-1987 Semiconductor direct d. c. convertors
- GB/T 15872-1995 Power supply interface for semiconductor equipment
- GB/T 15873-1995 Directives for drafting semiconductor facilities interface specification
- GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
- GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption
Military Standard of the People's Republic of China-General Armament Department
- GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
- GJB 2276-1995 Specification for microwave absorbers for waveguide dummy loads
Professional Standard - Machinery
- JB/T 5843-2005 Connectors for power semiconductor devices
- JB/T 5843-1991 Connectors for Power Semiconductor Devices
- JB/T 11331-2013 Heat-shrinkable Semi-conductive Tubing
机械电子工业部
- JB 5843-1991 Connectors for power semiconductor devices
Group Standards of the People's Republic of China
- T/QGCML 3970-2024 Semiconductor workshop metal dust intelligent detection and analysis system
- T/ZZB Q063-2022 Intermittent working life test equipment for semiconductor devices
- T/ZAQ 10113-2022 Intermittent working life test equipment for semiconductor devices
Shaanxi Provincial Standard of the People's Republic of China
- DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption
German Institute for Standardization
- DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
- DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
- DIN 50438-1:1995 Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen
- DIN 50438-2:1982 Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
- DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
- DIN IEC 60747-11:1992 Semiconductor devices; sectional specification for semiconductor devices; identical with IEC 60747-11:1985
- DIN EN 62374-1:2011-06 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011
- DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
- DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
Korean Agency for Technology and Standards (KATS)
- KS D 2717-2008 Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
- KS D 2717-2023 Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
- KS C IEC 62830-6:2022 Semiconductor devices — Semiconductor devices for energy harvesting and generation — Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
- KS D 2717-2008(2018) Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
- KS C IEC 60971-2003(2008) Semiconductor convertors-Identification code for convertor connections
- KS C IEC 60971-2013 Semiconductor convertors-Identification code for convertor connections
RU-GOST R
- GOST 21934-1983 Semiconducting photoelectric detectors and receiving photoelectric devices. Terms and definitions
- GOST 17704-1972 Semiconductor devices. Photoelectric receivers of radiant energy. Classification and system designations
- GOST 18986.5-1973 Semiconductor diodes. Method for measuring transition time
- GOST 18986.8-1973 Semiconductor diodes. Method for measuring reverse recovery time
- GOST 23900-1987 Power semiconductor devices. Overall and mounting dimensions
Aerospace Industries Association/ANSI Aerospace Standards
- AIA/NAS NAS 4124-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Dual Link
- AIA/NAS NAS 4122-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Extruded
- AIA/NAS NAS 4119-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Press-On Type
- AIA/NAS NAS 4120-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Encapsulating Type, TO-5
- AIA/NAS NAS 4118-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Retainer Clip Type
- AIA/NAS NAS 4123-1995 Heat Sink, Electrical-Electronic Component, Semiconductor Devices, for Dual Inline Packages (DIP)
- AIA/NAS NAS 4121-1996 Heat Sink, Electrical-Electronic Component, Semiconductor Devices, Formed FSC 5999
Association Francaise de Normalisation
- NF EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Harvesting piezoelectric shock energy for automotive sensors
- NF C96-779-2*NF EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2 : characterization of interfacing performances
- NF EN 62779-2:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 2 : caractérisation des performances d'interfaçage
- NF C96-069-3*NF EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3 : shock driven piezoelectric energy harvesting for automotive vehicle sensors
- NF EN 62779-1:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 1 : exigences générales
- NF C96-779-3*NF EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3 : functional type and its operational conditions
- NF C96-069-4*NF EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4 : evaluation method of data interface for automotive vehicle sensors
- NF C53-228:1989 Semiconductor convertors. Switches for uninterruptible power systems (vps switches).
- NF C96-069-1*NF EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1 : general requirements of power interface for automotive vehicle sensors
- NF EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for motor vehicles - Part 4: Method for evaluating the data interface for motor vehicle sensors
- NF EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for motor vehicles - Part 1: general requirements of power interface for motor vehicle sensors
- NF EN 62779-3:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 3 : type fonctionnel et ses conditions d'utilisation
British Standards Institution (BSI)
- BS EN IEC 62969-3:2018 Semiconductor devices. Semiconductor interface for automotive vehicles - Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- BS EN 62779-2:2016 Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
- BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
- BS IEC 62830-1:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based piezoelectric energy harvesting
- BS EN 62830-3:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based electromagnetic energy harvesting
- BS IEC 62779-4:2020 Semiconductor devices. Semiconductor interface for human body communication - Capsule endoscope
- BS IEC 62830-6:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
- 18/30363340 DC BS IEC 62779-4. Semiconductor devices. Semiconductor interface for human body communication. Part 4. Semiconductor interface for capsule endoscopy using human body communication
- BS EN IEC 62969-1:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. General requirements of power interface for automotive vehicle sensors
- BS IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 3: Vibration based electromagnetic energy harvesting
- BS IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 2: Thermo power based thermoelectric energy harvesting
- BS EN IEC 62969-4:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. Evaluation method of data interface for automotive vehicle sensors
- BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
- BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
- 14/30296894 DC BS EN 62830-1. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 1. Vibration based piezoelectric energy harvesting
- BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
- BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
- BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
- BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
- BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
- 18/30380675 DC BS EN IEC 62830-7. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 7. Linear sliding mode triboelectric energy harvesting
- BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
- BS EN 62779-1:2016 Semiconductor devices. Semiconductor interface for human body communication. General requirements
- BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
- BS EN 62374-1:2010 Semiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
- BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors
- BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
- BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
PH-BPS
- PNS IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
- PNS IEC 62830-6:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
- PNS IEC 62830-4:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices
SCC
- CEI EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- 12/30261676 DC BS EN 62779-2. Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
- DANSK DS/EN IEC 62969-3:2018 Semiconductor devices – Semiconductor interface for automotive vehicles – Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- 12/30258683 DC BS EN 62779-1. Semiconductor devices. Semiconductor interface for human body communication. General requirements
- CEI EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication Part 2: Characterization of interfacing performances
- CEI EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication Part 1: General requirements
- BS IEC 62047-48:2024 Semiconductor devices. Micro-electromechanical devices-Test method for determining solution concentration by optical absorption using MEMS fluidic device
- DIN EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (IEC 62969-3:2018); German version EN IEC 62969-3:2018
- DANSK DS/EN 62830-2:2017 Semiconductor devices – Semiconductor devices for energy harvesting and generation – Part 2: Thermo power based thermoelectric energy harvesting
- DIN EN 62969-3 E:2016 Draft Document - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (IEC 47/2274/CD:2016)
- CEI EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles Part 4: Evaluation method of data interface for automative vehivle sensors
- DANSK DS/EN IEC 62969-1:2018 Semiconductor devices – Semiconductor interface for automotive vehicles – Part 1: General requirements of power interface for automotive vehicle sensors
- CEI EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles Part 1: General requirements of power interface for automotive vehicle sensors
- DANSK DS/EN IEC 62969-4:2018 Semiconductor devices – Semiconductor interface for automotive vehicles – Part 4: Evaluation method of data interface for automotive vehicle sensors
- AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
- AWWA JAW56657 Journal AWWA — Planning for Water Reclamation in a Semiconductor Fabrication Facility
- AS 1955.3:1983 Semiconductor Convertors, Part 3: Semiconductor Direct D.C. Convertors (D.C. Chopper Convertors)
- CEI EN 62779-3:2017 Semiconductor devices - Semiconductor interface for human body communication Part 3: Functional type and its operational conditions
- UNE 20846-3:1994 SEMICONDUCTOR CONVERTORS. PART 3: SEMICONDUCTOR DIRECT D.C. CONVERTORS (D.C. CHOPPER-CONVERTORS).
- DIN EN 62779-2 E:2013 Draft Document - Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (IEC 47/2153/CD:2012)
- BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors
- CEI EN 60146-2:2001 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- DANSK DS/EN 62779-3:2016 Semiconductor devices – Semiconductor interface for human body communication – Part 3: Functional type and its operational conditions
- DANSK DS/EN 60146-2:2000 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- DIN EN 62830-3 E:2014 Draft Document - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting (IEC 47/2198/CD:2014)
- DIN EN 62830-2 E:2014 Draft Document - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting (IEC 47/2190/CD:2014)
- DIN EN 62779-1 E:2013 Draft Document - Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements (IEC 47/2152/CD:2012)
- DIN EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors (IEC 62969-1:2017); German version EN IEC 62969-1:2018
- DIN EN 62830-1 E:2014 Draft Document - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting (IEC 47/2189/CD:2014)
- UNE 20846-5:1994 SEMICONDUCTOR CONVERTORS. SWITCHES FOR UNINTERRUPTIBLE POWER SYSTEMS (UPS SWITCHES).
- DIN EN IEC 62969-4:2019 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors (IEC 62969-4:2018); German version EN IEC 62969-4:2018
- BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
- DANSK DS/EN 62374-1/AC:2011 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
- CEI EN 62374-1:2012 Semiconductor devices Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
- IEC 60146:1973 Semiconductor convertors
- DANSK DS/EN 62374-1:2011 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
International Electrotechnical Commission (IEC)
- IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- IEC 62830-6:2019 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
- IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
- IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
- IEC 62779-4:2020 Semiconductor devices - Semiconductor interface for human body communication - Part 4: Capsule endoscope
- IEC 62830-7:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7: Linear sliding mode triboelectric energy harvesting
- IEC 62969-1:2017 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
- IEC 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
- IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
- IEC 60146-2:1999 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
YU-JUS
- JUS N.R1.500-1980 Semioonductor ?evices. Acceptance. Electrical tests
- JUS N.R1.322-1979 Terms and definitions for semiconductor ?evices. Thyristors
ES-UNE
- UNE-EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in August of 2018.)
- UNE-EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (Endorsed by AENOR in July of 2016.)
- UNE-EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements (Endorsed by AENOR in July of 2016.)
- UNE-EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in March of 2018.)
- UNE-EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in October of 2018.)
- UNE-EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (Endorsed by AENOR in July of 2016.)
- UNE-EN 60146-2:2000 Semiconductor converters -- Part 2: Self-commutated semiconductor converters including direct d.c. converters (Endorsed by AENOR in December of 2001.)
- UNE-EN 62374-1:2010 Semiconductor devices -- Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (Endorsed by AENOR in March of 2011.)
European Committee for Electrotechnical Standardization(CENELEC)
- EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
- EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
- EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
- EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
- EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors
- EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
- EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
GSO
- DL/T 2717-2023 Acceptance Guidelines for Indirect Air Cooling Systems
- GSO IEC 62779-2:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
- GSO IEC 62830-1:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting
- GSO IEC 62779-1:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
- BH GSO IEC 62830-1:2022 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting
- BH GSO IEC 62779-1:2022 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
- GSO IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
- BH GSO IEC 62830-2:2022 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
- GSO IEC 62830-3:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
- BH GSO IEC 62830-3:2022 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
- BH GSO ISO 18257:2022 Space systems — Semiconductor integrated circuits for space applications — Design requirements
- GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
- GSO ISO 18257:2021 Space systems — Semiconductor integrated circuits for space applications — Design requirements
- GSO IEC 62969-1:2022 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
- BH GSO IEC 62969-1:2023 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
- GSO IEC 62779-3:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
- BH GSO IEC 60146-2:2016 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- OS GSO IEC 60146-2:2014 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- GSO IEC 60146-2:2014 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
- OS GSO IEC 62374-1:2013 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
CZ-CSN
- CSN 34 5910-1986 Gold bonding wire for semiconductor devices
- CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
- CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices
- CSN 35 8759-1977 Semiconductor devices. Transistors. Methods of measurement of switching times
- CSN 34 0415-1973 Screwless terminals for connecting copper of eonductors
- CSN 35 8701 Z1-1997 Semiconductor naming
KR-KS
- KS D 2717-2008(2023) Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
- KS C IEC 62830-6-2022 Semiconductor devices — Semiconductor devices for energy harvesting and generation — Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
Standard Association of Australia (SAA)
- AS 60146.2:2001/Amdt 1:2001 Semiconductor converters Self-commutated semiconductor converters include direct-to-dc converters
- AS 60146.2:2001(R2013) Semiconductor converters Self-commutated semiconductor converters include direct-to-dc converters
- AS 60146.2:2001 Semiconductor converters - Self-commutated semiconductor converters including direct d.c. converters
IEC - International Electrotechnical Commission
- IEC 62779-2:2016 Dispositifs à semiconducteurs – Interface à semiconducteurs pour les communications via le corps humain – Partie 2: Caractérisation des performances d'interfa?age (Edition 1.0)
- IEC 62779-1:2016 Dispositifs à semiconducteurs – Interface à semiconducteurs pour les communications via le corps humain – Partie 1: Exigences générales (Edition 1.0)
- IEC 62969-4:2018 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les véhicules automobiles - Partie 4: Méthode d’évaluation de l’interface de données destinée aux capteurs de véhicules automobiles (Edition 1.0)
- IEC 62830-4:2019 Dispositifs à semiconducteurs - Dispositifs à semiconducteurs pour récupération et production d’énergie – Partie 4: Méthodes d’essai et d’appréciation pour les dispositifs de récupération d’énergie piézoélectrique souples (Edition 1.0)
Defense Logistics Agency
- DLA SMD-5962-79017-1979 MICROCIRCUITS, CMOS, UNIVERSAL ASYNCHRONOUS RECEIVER/TRANSMITTER MONOLITHIC SILICON GATE
- DLA SMD-5962-90525 REV B-2003 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL ASYNCHRONOUS RECEIVER TRANSMITTER, MONOLITHIC SILICON
- DLA SMD-5962-87577 REV B-2005 MICROCIRCUIT, CMOS, OCTAL BUS TRANSCEIVER, MONOLITHIC SILICON
- DLA SMD-5962-96896-1997 MICROCIRCUIT, DIGITAL, BICMOS, HIGH-SPEED OPTICAL/COPPER RECEIVER INTERFACE, MONOLITHIC SILICON
- DLA MIL-S-19500/425 VALID NOTICE 2-2004 SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION JAN2N5431, AND JANTX2N5431
NEMA - National Electrical Manufacturers Association
- NEMA CB-4:1989 Semiconductor Graphite
Danish Standards Foundation
- DS/EN 60146-2:2000 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
JP-JEITA
- JEITA ED7500A-2-2006 Standard for the dimensions of semiconductor devices (Discrete semiconductor devices)
National Fire Protection Association (NFPA)
- NFPA FPH SECTION 6-30-2003 Semiconductor Manufacturing
Society of Automotive Engineers (SAE)
- SAE AS6294/3-2019 Requirements for Plastic Encapsulated Discrete Semiconductors in Space Applications
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC EIA-318-B-1996 Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]
VDE - VDE Verlag GmbH@ Berlin@ Germany
- VDE 0884-79-3-2017 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (IEC 62779-3:2016); German version EN 62779-3:2016
American Society for Testing and Materials (ASTM)
- ASTM F487-88(2001) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
- ASTM F487-88(2006) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
ES-AENOR
- UNE 20-700 Pt.11-1991 Semiconductor devices. Part 11:Sectional specification for discrete devices
BE-NBN
- NBN C 63-158-2-1989 Low-voltage controlgear Semiconductor contactors (solid state contactors)
IEEE - The Institute of Electrical and Electronics Engineers@ Inc.
- IEEE 256-1963 SEMICONDUCTOR DIODES
Military Standards (MIL-STD)
- DOD A-A-54552-1991 POUCH, LIQUID ABSORBENT
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