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Database: 365,228(8 Aug 2026)

indirect semiconductor absorption

indirect semiconductor absorption, Total:220 items.

The international standard classification for "indirect semiconductor absorption" includes: Aerospace electric equipment and systems , Plug-and-socket devices. Connectors , Rectifiers. Convertors. Stabilized power supply , Testing of metals , Integrated circuits. Microelectronics , Chemical analysis of metals .

The Chinese standard classification for "indirect semiconductor absorption" includes: Electronic components , Connector , Power semiconductor device and parts , Dedicated processing equipment , Metal physical property test method , Semiconductor integrated circuit , Semimetal and semiconductor material analysis method .


Professional Standard - Electron

  • SJ 2433-1984 Bonding sheet for semiconductor tubes
  • SJ 20642.1-1998 Semiconductor opto-electronic module - Detail specification for Type GD81 PIN-FET opto-receiver module
  • SJ/T 11487-2015 Non-contact measurement method for the resistivity of semi-insulating semiconductor wafer
  • SJ 20642.2-1998 Semiconductor opto-electronic module - Detail specification for Type GD82 PIN-FET opto-receiver module
  • SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials
  • SJ/T 10139-1991 Detail specification for electronic components--Semiconductor integrated circuits--CC4028 CMOS 4-line to 10-line decoder
  • SJ 50597/45-1997 Semiconductor integrated circuits-Detail specification for Types JJ55107,JJ55108,JJ55113,JJ55114 and JJ55115 linear drivers and receivers
  • SJ/T 10290-1991 Medium-frequency transformers for use in semiconductor frequency modulation broadcast receivers
  • SJ 1619-1980 Intermediate-frequency tranformers and adjustable inductance coils for transistorized black and white television receiver
  • SJ 20642.3-1998 Semiconductor opto-electronic module - Detail specification for Type GD83 PIN-FET opto-receiver module
  • SJ/T 11856.3-2022 Technical Specifications for Semiconductor Laser Chips for Optical Fiber Communications Part 3: Electric Absorption Modulated Semiconductor Laser Chips for Light Sources

Professional Standard - Aerospace

  • QJ 1908A-1998 Acceptance Uncovering Check Method of Semiconductor Devices
  • QJ 1511A-1998 Semiconductor Discrete Devices - Specifications for Acceptance

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 3859.4-2004 Semiconductor converter - Self-commutated semiconductor converters including direct d.c.converters
  • GB/T 6616-2023 Test method for resistivity of semiconductor wafers and sheet resistance of semiconductor films—Noncontact eddy-current gauge
  • GB/T 20870.10-2023 Semiconductor devices—Part 16-10: Technology Approval Schedule for monolithic microwave integrated circuits
  • GB/T 15872-2013 Power supply interface for semiconductor equipment
  • GB/T 7677-1987 Semiconductor direct d. c. convertors
  • GB/T 15872-1995 Power supply interface for semiconductor equipment
  • GB/T 15873-1995 Directives for drafting semiconductor facilities interface specification
  • GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption
  • GB/T 1557-1989 The method of determining interstitial oxygen content in silicon by infrared absorption

Military Standard of the People's Republic of China-General Armament Department

  • GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
  • GJB 2276-1995 Specification for microwave absorbers for waveguide dummy loads

Professional Standard - Machinery

机械电子工业部

Group Standards of the People's Republic of China

  • T/QGCML 3970-2024 Semiconductor workshop metal dust intelligent detection and analysis system
  • T/ZZB Q063-2022 Intermittent working life test equipment for semiconductor devices
  • T/ZAQ 10113-2022 Intermittent working life test equipment for semiconductor devices

Shaanxi Provincial Standard of the People's Republic of China

  • DB61/T 1448-2021 Intermittent life test procedures for high-power semiconductor discrete devices

国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption

German Institute for Standardization

  • DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide
  • DIN 50449-2:1998 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 2: Boron in gallium arsenide
  • DIN 50438-1:1995 Testing of materials for semiconductor technology - Determination of impurity content in silicon by infrared absorption - Part 1: Oxygen
  • DIN 50438-2:1982 Testing of materials for semiconductor technology; determination of impurty content in silicon by infrared absorption; carbon
  • DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
  • DIN IEC 60747-11:1992 Semiconductor devices; sectional specification for semiconductor devices; identical with IEC 60747-11:1985
  • DIN EN 62374-1:2011-06 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (IEC 62374-1:2010); German version EN 62374-1:2010 + AC:2011
  • DIN 50445:1992 Testing of materials for semiconductor technology; contactless determination of the electrical resistivity of semiconductor slices with the eddy current method; homogeneously doped semiconductor wafers
  • DIN 50448:1998 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe

Korean Agency for Technology and Standards (KATS)

  • KS D 2717-2008 Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
  • KS D 2717-2023 Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
  • KS C IEC 62830-6:2022 Semiconductor devices — Semiconductor devices for energy harvesting and generation — Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
  • KS D 2717-2008(2018) Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
  • KS C IEC 60971-2003(2008) Semiconductor convertors-Identification code for convertor connections
  • KS C IEC 60971-2013 Semiconductor convertors-Identification code for convertor connections

RU-GOST R

  • GOST 21934-1983 Semiconducting photoelectric detectors and receiving photoelectric devices. Terms and definitions
  • GOST 17704-1972 Semiconductor devices. Photoelectric receivers of radiant energy. Classification and system designations
  • GOST 18986.5-1973 Semiconductor diodes. Method for measuring transition time
  • GOST 18986.8-1973 Semiconductor diodes. Method for measuring reverse recovery time
  • GOST 23900-1987 Power semiconductor devices. Overall and mounting dimensions

Aerospace Industries Association/ANSI Aerospace Standards

  • AIA/NAS NAS 4124-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Dual Link
  • AIA/NAS NAS 4122-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Extruded
  • AIA/NAS NAS 4119-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Press-On Type
  • AIA/NAS NAS 4120-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Encapsulating Type, TO-5
  • AIA/NAS NAS 4118-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Retainer Clip Type
  • AIA/NAS NAS 4123-1995 Heat Sink, Electrical-Electronic Component, Semiconductor Devices, for Dual Inline Packages (DIP)
  • AIA/NAS NAS 4121-1996 Heat Sink, Electrical-Electronic Component, Semiconductor Devices, Formed FSC 5999

Association Francaise de Normalisation

  • NF EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Harvesting piezoelectric shock energy for automotive sensors
  • NF C96-779-2*NF EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2 : characterization of interfacing performances
  • NF EN 62779-2:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 2 : caractérisation des performances d'interfaçage
  • NF C96-069-3*NF EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3 : shock driven piezoelectric energy harvesting for automotive vehicle sensors
  • NF EN 62779-1:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 1 : exigences générales
  • NF C96-779-3*NF EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3 : functional type and its operational conditions
  • NF C96-069-4*NF EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4 : evaluation method of data interface for automotive vehicle sensors
  • NF C53-228:1989 Semiconductor convertors. Switches for uninterruptible power systems (vps switches).
  • NF C96-069-1*NF EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1 : general requirements of power interface for automotive vehicle sensors
  • NF EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for motor vehicles - Part 4: Method for evaluating the data interface for motor vehicle sensors
  • NF EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for motor vehicles - Part 1: general requirements of power interface for motor vehicle sensors
  • NF EN 62779-3:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 3 : type fonctionnel et ses conditions d'utilisation

British Standards Institution (BSI)

  • BS EN IEC 62969-3:2018 Semiconductor devices. Semiconductor interface for automotive vehicles - Shock driven piezoelectric energy harvesting for automotive vehicle sensors
  • BS EN 62779-2:2016 Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
  • BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
  • BS IEC 62830-1:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based piezoelectric energy harvesting
  • BS EN 62830-3:2017 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Vibration based electromagnetic energy harvesting
  • BS IEC 62779-4:2020 Semiconductor devices. Semiconductor interface for human body communication - Capsule endoscope
  • BS IEC 62830-6:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
  • 18/30363340 DC BS IEC 62779-4. Semiconductor devices. Semiconductor interface for human body communication. Part 4. Semiconductor interface for capsule endoscopy using human body communication
  • BS EN IEC 62969-1:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. General requirements of power interface for automotive vehicle sensors
  • BS IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 3: Vibration based electromagnetic energy harvesting
  • BS IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 2: Thermo power based thermoelectric energy harvesting
  • BS EN IEC 62969-4:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. Evaluation method of data interface for automotive vehicle sensors
  • BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
  • BS IEC 62830-4:2019 Semiconductor devices. Semiconductor devices for energy harvesting and generation - Test and evaluation methods for flexible piezoelectric energy harvesting devices
  • 14/30296894 DC BS EN 62830-1. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 1. Vibration based piezoelectric energy harvesting
  • BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
  • BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
  • BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
  • 18/30380675 DC BS EN IEC 62830-7. Semiconductor devices. Semiconductor devices for energy harvesting and generation. Part 7. Linear sliding mode triboelectric energy harvesting
  • BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
  • BS EN 62779-1:2016 Semiconductor devices. Semiconductor interface for human body communication. General requirements
  • BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
  • BS EN 62374-1:2010 Semiconductor devices. Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
  • BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
  • BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices

PH-BPS

  • PNS IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
  • PNS IEC 62830-6:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
  • PNS IEC 62830-4:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 4: Test and evaluation methods for flexible piezoelectric energy harvesting devices

SCC

  • CEI EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
  • 12/30261676 DC BS EN 62779-2. Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
  • DANSK DS/EN IEC 62969-3:2018 Semiconductor devices – Semiconductor interface for automotive vehicles – Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
  • 12/30258683 DC BS EN 62779-1. Semiconductor devices. Semiconductor interface for human body communication. General requirements
  • CEI EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication Part 2: Characterization of interfacing performances
  • CEI EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication Part 1: General requirements
  • BS IEC 62047-48:2024 Semiconductor devices. Micro-electromechanical devices-Test method for determining solution concentration by optical absorption using MEMS fluidic device
  • DIN EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (IEC 62969-3:2018); German version EN IEC 62969-3:2018
  • DANSK DS/EN 62830-2:2017 Semiconductor devices – Semiconductor devices for energy harvesting and generation – Part 2: Thermo power based thermoelectric energy harvesting
  • DIN EN 62969-3 E:2016 Draft Document - Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (IEC 47/2274/CD:2016)
  • CEI EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles Part 4: Evaluation method of data interface for automative vehivle sensors
  • DANSK DS/EN IEC 62969-1:2018 Semiconductor devices – Semiconductor interface for automotive vehicles – Part 1: General requirements of power interface for automotive vehicle sensors
  • CEI EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles Part 1: General requirements of power interface for automotive vehicle sensors
  • DANSK DS/EN IEC 62969-4:2018 Semiconductor devices – Semiconductor interface for automotive vehicles – Part 4: Evaluation method of data interface for automotive vehicle sensors
  • AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
  • AWWA JAW56657 Journal AWWA — Planning for Water Reclamation in a Semiconductor Fabrication Facility
  • AS 1955.3:1983 Semiconductor Convertors, Part 3: Semiconductor Direct D.C. Convertors (D.C. Chopper Convertors)
  • CEI EN 62779-3:2017 Semiconductor devices - Semiconductor interface for human body communication Part 3: Functional type and its operational conditions
  • UNE 20846-3:1994 SEMICONDUCTOR CONVERTORS. PART 3: SEMICONDUCTOR DIRECT D.C. CONVERTORS (D.C. CHOPPER-CONVERTORS).
  • DIN EN 62779-2 E:2013 Draft Document - Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (IEC 47/2153/CD:2012)
  • BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors
  • CEI EN 60146-2:2001 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
  • DANSK DS/EN 62779-3:2016 Semiconductor devices – Semiconductor interface for human body communication – Part 3: Functional type and its operational conditions
  • DANSK DS/EN 60146-2:2000 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
  • DIN EN 62830-3 E:2014 Draft Document - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting (IEC 47/2198/CD:2014)
  • DIN EN 62830-2 E:2014 Draft Document - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting (IEC 47/2190/CD:2014)
  • DIN EN 62779-1 E:2013 Draft Document - Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements (IEC 47/2152/CD:2012)
  • DIN EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors (IEC 62969-1:2017); German version EN IEC 62969-1:2018
  • DIN EN 62830-1 E:2014 Draft Document - Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting (IEC 47/2189/CD:2014)
  • UNE 20846-5:1994 SEMICONDUCTOR CONVERTORS. SWITCHES FOR UNINTERRUPTIBLE POWER SYSTEMS (UPS SWITCHES).
  • DIN EN IEC 62969-4:2019 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors (IEC 62969-4:2018); German version EN IEC 62969-4:2018
  • BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
  • DANSK DS/EN 62374-1/AC:2011 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
  • CEI EN 62374-1:2012 Semiconductor devices Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers
  • IEC 60146:1973 Semiconductor convertors
  • DANSK DS/EN 62374-1:2011 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

International Electrotechnical Commission (IEC)

  • IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
  • IEC 62830-6:2019 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices
  • IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
  • IEC 62830-3:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
  • IEC 62779-4:2020 Semiconductor devices - Semiconductor interface for human body communication - Part 4: Capsule endoscope
  • IEC 62830-7:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 7: Linear sliding mode triboelectric energy harvesting
  • IEC 62969-1:2017 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
  • IEC 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
  • IEC 60146-2:1999 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters

YU-JUS

ES-UNE

  • UNE-EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in August of 2018.)
  • UNE-EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (Endorsed by AENOR in July of 2016.)
  • UNE-EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements (Endorsed by AENOR in July of 2016.)
  • UNE-EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in March of 2018.)
  • UNE-EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors (Endorsed by Asociación Española de Normalización in October of 2018.)
  • UNE-EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (Endorsed by AENOR in July of 2016.)
  • UNE-EN 60146-2:2000 Semiconductor converters -- Part 2: Self-commutated semiconductor converters including direct d.c. converters (Endorsed by AENOR in December of 2001.)
  • UNE-EN 62374-1:2010 Semiconductor devices -- Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (Endorsed by AENOR in March of 2011.)

European Committee for Electrotechnical Standardization(CENELEC)

  • EN IEC 62969-3:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 3: Shock driven piezoelectric energy harvesting for automotive vehicle sensors
  • EN 62779-1:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
  • EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
  • EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • EN IEC 62969-4:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 4: Evaluation method of data interface for automotive vehicle sensors
  • EN IEC 62969-1:2018 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
  • EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

GSO

  • DL/T 2717-2023 Acceptance Guidelines for Indirect Air Cooling Systems
  • GSO IEC 62779-2:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
  • GSO IEC 62830-1:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting
  • GSO IEC 62779-1:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
  • BH GSO IEC 62830-1:2022 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 1: Vibration based piezoelectric energy harvesting
  • BH GSO IEC 62779-1:2022 Semiconductor devices - Semiconductor interface for human body communication - Part 1: General requirements
  • GSO IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
  • BH GSO IEC 62830-2:2022 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting
  • GSO IEC 62830-3:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
  • BH GSO IEC 62830-3:2022 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 3: Vibration based electromagnetic energy harvesting
  • BH GSO ISO 18257:2022 Space systems — Semiconductor integrated circuits for space applications — Design requirements
  • GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
  • GSO ISO 18257:2021 Space systems — Semiconductor integrated circuits for space applications — Design requirements
  • GSO IEC 62969-1:2022 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
  • BH GSO IEC 62969-1:2023 Semiconductor devices - Semiconductor interface for automotive vehicles - Part 1: General requirements of power interface for automotive vehicle sensors
  • GSO IEC 62779-3:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
  • BH GSO IEC 60146-2:2016 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
  • GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
  • OS GSO IEC 60146-2:2014 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
  • GSO IEC 60146-2:2014 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters
  • OS GSO IEC 62374-1:2013 Semiconductor devices - Part 1: Time-dependent dielectric breakdown (TDDB) test for inter-metal layers

CZ-CSN

KR-KS

  • KS D 2717-2008(2023) Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
  • KS C IEC 62830-6-2022 Semiconductor devices — Semiconductor devices for energy harvesting and generation — Part 6: Test and evaluation methods for vertical contact mode triboelectric energy harvesting devices

Standard Association of Australia (SAA)

  • AS 60146.2:2001/Amdt 1:2001 Semiconductor converters Self-commutated semiconductor converters include direct-to-dc converters
  • AS 60146.2:2001(R2013) Semiconductor converters Self-commutated semiconductor converters include direct-to-dc converters
  • AS 60146.2:2001 Semiconductor converters - Self-commutated semiconductor converters including direct d.c. converters

IEC - International Electrotechnical Commission

  • IEC 62779-2:2016 Dispositifs à semiconducteurs – Interface à semiconducteurs pour les communications via le corps humain – Partie 2: Caractérisation des performances d'interfa?age (Edition 1.0)
  • IEC 62779-1:2016 Dispositifs à semiconducteurs – Interface à semiconducteurs pour les communications via le corps humain – Partie 1: Exigences générales (Edition 1.0)
  • IEC 62969-4:2018 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les véhicules automobiles - Partie 4: Méthode d’évaluation de l’interface de données destinée aux capteurs de véhicules automobiles (Edition 1.0)
  • IEC 62830-4:2019 Dispositifs à semiconducteurs - Dispositifs à semiconducteurs pour récupération et production d’énergie – Partie 4: Méthodes d’essai et d’appréciation pour les dispositifs de récupération d’énergie piézoélectrique souples (Edition 1.0)

Defense Logistics Agency

NEMA - National Electrical Manufacturers Association

Danish Standards Foundation

  • DS/EN 60146-2:2000 Semiconductor converters - Part 2: Self-commutated semiconductor converters including direct d.c. converters

JP-JEITA

  • JEITA ED7500A-2-2006 Standard for the dimensions of semiconductor devices (Discrete semiconductor devices)

National Fire Protection Association (NFPA)

Society of Automotive Engineers (SAE)

  • SAE AS6294/3-2019 Requirements for Plastic Encapsulated Discrete Semiconductors in Space Applications

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

  • JEDEC EIA-318-B-1996 Measurement of Reverse Recovery Time for Semiconductor Signal Diodes [Replaced: JEDEC 318-1]

VDE - VDE Verlag GmbH@ Berlin@ Germany

  • VDE 0884-79-3-2017 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions (IEC 62779-3:2016); German version EN 62779-3:2016

American Society for Testing and Materials (ASTM)

  • ASTM F487-88(2001) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
  • ASTM F487-88(2006) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding

ES-AENOR

BE-NBN

  • NBN C 63-158-2-1989 Low-voltage controlgear Semiconductor contactors (solid state contactors)

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

Military Standards (MIL-STD)