Three-electrode test and two-electrode

Three-electrode test and two-electrode, Total:219 items.

The international standard classification for "Three-electrode test and two-electrode" includes: Optoelectronics. Laser equipment , Nuclear energy in general , Solar energy engineering , Diodes , Electronic tubes , Conducting materials .

The Chinese standard classification for "Three-electrode test and two-electrode" includes: Technical management , Technical Management , Technical management , Semiconductor emitting device , Nuclear detector , Solar energy , Semiconductor diode , Microwave tube , Electrical system and equipment , Optical communication equipment , Power semiconductor device and parts , Carbon material .

Professional Standard - Military and Civilian Products

WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester
WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes

Professional Standard - Electron

SJ 966-1975 Methods of measurement for reverse breakdown voltage of silicon switching diodes
SJ 2354.11-1983 Method of measurement for width of blind zone of PIN and avalanche photodiode matrix
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
SJ 2354.4-1983 Method of measurement for forward voltage drop of PIN and avalanche photodiodes
SJ 2215.6-1982 Method of measurement for junction capacitance of semiconductor photocouplers (diodes)
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
SJ/Z 9009-1987 Methods for measurement of direct interelectrode capacitances of electronic tubes and valves
SJ 2354.10-1983 Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix
SJ 444-1973 Methods of measurement for anode current and anode current on underheated condition of high-voltage rectifier tubes
SJ 2354.14-1983 Method of measurement for excess noise factor of PIN and avalanche photodiodes
SJ 2354.9-1983 Method of measurement for noise equivalent power of PIN and avalanche photodiodes
SJ 2141-1982 Methods of measurement for breakdown voltage of silicon currenet regulator diodes
SJ 2215.4-1982 Method of measurement for reverse current of semiconductor photocouplers (diodes)
SJ 2354.3-1983 Method of measurement for dark current of PIN and avalanche photodiodes
SJ 2354.2-1983 Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes
SJ 2354.5-1983 Method of measurement for capacitance of PIN and avalanche photodiodes
SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
SJ 2354.13-1983 Method of measurement for multiplication factor of PIN and avalanche photodiodes
SJ 2215.3-1982 Method of measurement for forward current of semiconductor photocouplers (diodes)
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
SJ 1387-1978 Methods of measurement for filament current and filament voltage of noise-generator diodes
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ 2658.4-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Capacitance
SJ 363-1973 Measurement of reflector total current, reflector ion current and reflector leakage current of reflex klystrons
SJ 2658.3-1986 Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Backward Voltage
SJ/T 2214-2015 Measuring methods for semiconductor photodiode and phototransistor
SJ 2142-1982 Methods of measurement for current temperature coefficient of silicon current regulator diodes
SJ 2354.12-1983 Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes
SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
SJ 1391-1978 Methods of measurement for voltage standing wave ratio on cold conditions of noise-generator diodes
SJ 2138-1982 Methods of measurement for regulated current of silicon current regulator diodes
SJ/T 2216-2015 Technical specification for photodiode of silicon
SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
SJ 2354.1-1983 General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes

Taiwan Provincial Standard of the People's Republic of China

CNS 5764-1980 Voltage Regulator Diode Noise Voltage Measurement
CNS 8105-1981 Test Method for Transistor Collector - Emitter Saturation Voltage
CNS 11873-1999 Pole changing low-voltage three-phase induction motors

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 44292-2024 Electrostatic discharge susceptibility test for bypass diode applied in photovoltaic modules
GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e
GB/T 3789.23-1991 Measurements of the electrical properties of transmitting tubes-Measuring methods of grid No3 control ability
GB/T 23729-2009 Photodiodes for scintillation detectors - Test procedures
GB/T 3789.2-1991 Measurements of the electrical properties of transmitting tubes - Measuring methods of current of anode and grid
GB/T 3789.11-1991 Measurements of the electrical properties of transmitting tubes-Measuring methods of grid No3 cut-off voltage
GB/T 7274-2015 Methods for the measurement of direct inter-electrode capacitances of electronic tubes and valves
GB/T 6570-1986 Measuring methods for microwave diodes
GB/T 7274-1987 Methods for the measurement of direct interelectrode capacitances of electronic tubes and valves

工业和信息化部

XB/T 702-2022 Three-electrode system test method for testing the electrochemical properties of rare earth hydrogen storage alloy powder for metal hydride-nickel battery negative electrodes

Professional Standard - Aviation

HB 5659-1981 Liquid Electric Switch for Tripolar Glass
HB 5658-1981 Liquid Electric Switch for Dipolar Glass

邮电部

YD/T 0835-1996 Avalanche photodiode detection method

Professional Standard - Post and Telecommunication

YD/T 835-1996 Test Method of Avalanche Photodiodes

Professional Standard - Aerospace

QJ 2493-1993 Acceptance specification for microwave diodes and transistors

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04009-1987 BJ2983 type crystal triode forward-biased secondary breakdown tester trial verification regulations
JJG(电子) 04026-1989 BJ2985 type crystal triode maintenance voltage tester verification regulations

Professional Standard - Machinery

JB/T 7624-2013 Testing Methods for Rectifier Diodes
JB/T 5186-1991 Silicon photodiodes for cameras
JB/T 7619-1994 Test Method for Two-way Triple Pole Thyristors

Group Standards of the People's Republic of China

T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/CVIA 59-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods

国家能源局

NB/T 42082-2016 Vanadium flow battery-test method for electrode

Professional Standard - Energy

NB/T 11224-2023 Test method for Zinc-nickle flow battery Electrode

Professional Standard - Non-ferrous Metal

YS/T 411-1998 The measuring method of CO�2 reaction of anode carbon anode paste for aluminium electrolysis

Canadian Standards Association (CSA)

CSA C22.2 NO.160-2015 Voltage and Polarity Testers (Third Edition)
CSA C22.2 No.160-2015(R2020) Voltage and polarity testers

Defense Logistics Agency

DLA A-A-55428 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55426 D-2012 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55429 D-2012 FUSEHOLDER, BLOCK, CLASS H, 100 AMPERE, 600 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55168 D-2012 FUSEHOLDER, BLOCK, CLASS H, 30 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
DLA A-A-55427 D-2012 FUSEHOLDER, BLOCK, CLASS H, 60 AMPERE, 250 V AC, ONE, TWO, AND THREE POLE
DLA MIL-PRF-19500/656 A-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS

RU-GOST R

GOST 21107.10-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for glow-discharge thyratrons and gas-filled rectifiers
GOST 17792-1972 Standarde reference silver-silver cloride saturate electrode of second class
GOST 21107.13-1978 Gas discharge devices. Methods of measurement of electrical parameters of operating and measuring conditions for pulsed thyratrons and gas-filled rectifiers
GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
GOST 19138.2-1985 Triode thyristors. Method for measuring trigger direct and peak gate current and trigger direct and peak gate voltage
GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
GOST 18604.27-1986 Power high-voltage bipolar transistors. Collector-base (emitter-base) breakdown voltage measurement at emitter (collector) cut-off current
GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge
GOST 18986.24-1983 Semiconductor diodes. Measurement method of breakdown voltage
GOST 19438.12-1975 Low-power electronic tubes and valves. Methods of measurement of plate current and currents of grids having positive potential
GOST 21107.9-1976 Gas-discharge devices. Methods of measurement of electrial parameters of pulse thyratrons

CZ-CSN

CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
CSN 35 8735-1964 Semiconductor diodes. Measurement of d. c. currents and voltages
CSN 35 8757 Cast.1-1985 Transistors. Measuring method of collector-base and emitterbase breakdown voltage
CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
CSN 35 8786-1983 Varicaps. Electric parameter measurement methods
CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.
CSN 35 8539-1968 Methods of testing anodě resistance of electronic tubes
CSN 35 8542-1968 Methods of testing interelectrode capacitances of electronio tubes
CSN 35 8757 Cast.4-1985 Transistors. Methods of measuring collector cut-off current, emitter cut-off current and collector-emitter cut-off current

British Standards Institution (BSI)

BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
BS IEC 60747-5-16:2023 Semiconductor devices - Optoelectronic devices. Light emitting diodes. Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy
BS 7310:1990 Specification for ion-selective electrodes, reference electrodes, combination electrodes and ion-selective electrode meters for determination of ions in solution
BS PD IEC/TS 62916:2017 Photovoltaic modules. Bypass diode electrostatic discharge susceptibility testing
18/30367363 DC BS IEC 60747-5-8. Semiconductor devices. Part 5-8. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS 7310:1990(2012) Specification for Ion - selective electrodes, reference electrodes, combination electrodes and ion - selective electrode meters for determination of ions in solution
18/30388245 DC BS EN IEC 60747-5-11. Semiconductor devices. Part 5-11. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS ISO 20168:2016 Resistance welding. Locking tapers for electrode holders and electrode caps
BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor

RO-ASRO

STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes

Korean Agency for Technology and Standards (KATS)

KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C IEC 60747-3-2:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
KS C 6991-2001(2011) TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C IEC 60747-3-1:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C 6990-2001 General rules of photodiodes for fiber optic transmission

SCC

CSA C22.2 No.160-M1985-1985(R2012) Voltage and Polarity Testers
DANSK DS/IEC TS 62916:2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing
BS 4215-5:1987 Resistance spot welding electrodes, electrode holders and ancillary equipment-Specification for electrode back-ups and clamps
BS 4215:1967 Specification for spot welding electrodes and electrode holders
DANSK DS/EN 120005:2016 Blank Detail Specification: Photodiodes, photodiode arrays (not intended for fibre optic applications)
DANSK DS/EN 120001:2016 Blank Detail Specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
CSA C865.1-2023 Pilotes de diodes électroluminescentes — méthodes de mesure
MIL MIL-P-22340-1964 POWER SUPPLY DIODE AND CAPACITOR ASSEMBLY (NO S/S DOCUMENT)
CEI EN 61243-3:2015 Live working - Voltage detectors Part 3: Two-pole low-voltage type
CEI UNEL 41514:1971 Three-pole air disconnect switches for indoors and three-pole earthing switches for indoors for voltage up to 36 kV and rated current up to 1250 A - n. 4 tables
NEMA GR 1-2022 Ground Rod Electrodes and Ground Rod Electrode Couplings

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
JEDEC JESD307-1992 Voltage Regulator Diode Noise Voltage Measurement

German Institute for Standardization

DIN 41700-2:1989 Electrical communication engineering; three pole plug
DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN IEC 62088:2002-09 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures (IEC 62088:2001)
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992

PL-PKN

PN T01504-22-1987 Transistors Measuring methods Collector-base and emitter-base capacitances Ccbo and Cebo
PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
PN T01504-61-1987 Diodes Measuring methods Recovered charge Q,
PN T04812-1971 Test o? electric strength for booster diodes and lin? outpu? tubes in horisontal deflection circuits
PN S76105-1973 Spark gap with three elek?rodes for ?es?ing igni?ion devices of mo?or vehicles
PN T01010 ArkusZ05-1974 Electronic tubes Vacuum diodes Terms and definitions
PN T06516-1990 ?on — selective elektrodes General re?uirements and tests

U.S. Military Regulations and Norms

ARMY MIL-N-63400 (2)-1988 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-N-63400 NOTICE 1-1997 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-C-48487 C-1995 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C NOTICE 3-1997 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C REINST NOTICE 2-1996 CIRCUIT CARD ASSEMBLY - LAMP DIODES

GSO

GSO IEC TS 62916:2021 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
GSO IEC 62088:2014 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures
OS GSO ISO 2315:2016 Aircraft -- Two- and four-pole sealed electromagnetic relays, 2 A and 3 A -- Clearance and fixing dimensions
GSO ISO 2315:2016 Aircraft -- Two- and four-pole sealed electromagnetic relays, 2 A and 3 A -- Clearance and fixing dimensions
GSO 1500:2002 Methods of testing earthing electrodes.
BH GSO ISO 2315:2017 Aircraft -- Two- and four-pole sealed electromagnetic relays, 2 A and 3 A -- Clearance and fixing dimensions
OS GSO 1500:2002 Methods of testing earthing electrodes.
OS GSO IEC 62088:2014 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures
BH GSO IEC 62088:2016 Nuclear instrumentation - Photodiodes for scintillation detectors - Test procedures

Spanish Association for Standardization (UNE)

UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)

European Standard for Electrical and Electronic Components

EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor

SE-SIS

SIS SS-ISO 5827:1992 Sp?t welding — Electrode back-ups and damps
SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
SIS SS 14 34 25-1984 Welding electrodes - Wire electrode
SIS SS 14 34 23-1984 Welding electrodes - Wire electrode
SIS SS 14 34 04-1984 Welding electrodes - Wire electrode
SIS SS 14 34 22-1984 Welding electrodes - Wire electrode
SIS SS 14 34 02-1984 Welding electrodes - Wire electrode

International Electrotechnical Commission (IEC)

IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
IEC TS 62916:2017 Photovoltaic modules - Bypass diode electrostatic discharge susceptibility testing
IEC 60747-5-11:2019 Semiconductor devices - Part 5-11: Optoelectronic devices - Light emitting diodes - Test method of radiative and nonradiative currents of light emitting diodes
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs

American Society for Testing and Materials (ASTM)

ASTM G5-94(1999)e1 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
ASTM G5-94(2004) Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
ASTM G5-94(1999) Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
ASTM G5-94 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
ASTM RR-D02-1414 1997 D6120-Test Method for Electrical Resistivity of Anode and Cathode Carbon Material at Room Temperature
ASTM RR-G01-1026 2013 G0005-Reference Test Method for Making Potentiodynamic Anodic Polarization Measurements
ASTM G5-94(2011)e1 Standard Reference Test Method for Making Potentiostatic and Potentiodynamic Anodic Polarization Measurements
ASTM F769-00 Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)

IEC - International Electrotechnical Commission

TS 62916-2017 Photovoltaic modules – Bypass diode electrostatic discharge susceptibility testing (Edition 1.0)
IEC 62088:2001 Nuclear Instrumentation - Photodiodes for Scintillation Detectors - Test Procedures (Edition 1.0)

Association Francaise de Normalisation

NF EN 120005:1992 Special frame specification: photodiodes, photodiode arrays (Not intended for optical fiber applications}
NF EN 120001:1992 Particular framework specification: light-emitting diodes, light-emitting diode arrays, light-emitting diode displays without resistance or internal logic circuits
NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
NF A82-116:2021 Resistance welding - Locking tapers for electrode holders and electrode caps
NF C86-815:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.
NF L72-130:1980 Transmetteurs tachymétriques triphasés bipolaires

Danish Standards Foundation

DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di

Lithuanian Standards Office

LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE C37.103-2004 Guide for Differential and Polarizing Relay Circuit Testing
IEEE C37.103-1990 Guide for Differential and Polarizing Relay Circuit Testing
IEEE C62.37-1996 Standard Test Specification for Thyristor Diode Surge Protective Devices
IEEE C37.103-2015 Guide for Differential and Polarizing Relay Circuit Testing

United States Navy

NAVY MIL-PRF-28800 F-1996 TEST EQUIPMENT FOR USE WITH ELECTRICAL AND ELECTRONIC EQUIPMENT, GENERAL SPECIFICATION FOR

Institute of Electrical and Electronics Engineers (IEEE)

IEEE Std C37.103-1990 Guide for differential and polarizing relay circuit testing
IEEE Std C37.103-2015 IEEE Guide for Differential and Polarizing Relay Circuit Testing
IEEE Std C37.103-2004 IEEE Guide for Differential and Polarizing Relay Circuit Testing

International Organization for Standardization (ISO)

ISO 20168:2016 Resistance welding - Locking tapers for electrode holders and electrode caps
ISO 24598:2019 Welding consumables — Solid wire electrodes, tubular cored electrodes and electrode-flux combinations for submerged arc welding of creep-resisting steels — Classification
ISO 5827:1983 Spot welding; Electrode back-ups and clamps

HU-MSZT

MSZ 10906/3.lap-1963 Electrode tube power mark measurement mode. Anode current, cathode current, you manage to bring the grid to measure the current
MNOSZ 1301-1952 Testing of resistance K, E and O poles

European Committee for Standardization (CEN)

EN ISO 20168:2021 Resistance welding - Locking tapers for electrode holders and electrode caps (ISO 20168:2016)

Japanese Industrial Standards Committee (JISC)

JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission

IPC - Association Connecting Electronics Industries

IPC TM-650 2.6.25B-2016 Conductive Anodic Filament (CAF) Resistance Test: X-Y Axis
IPC TM-650 2.6.25A-2012 Conductive Anodic Filament (CAF) Resistance Test: X-Y Axis

NEMA - National Electrical Manufacturers Association

NEMA GR 1-2005 GROUNDING ROD ELECTRODES AND GROUNDING ROD ELECTRODE COUPLINGS

National Electrical Manufacturers Association（NEMA)

NEMA GR 1-2007 GROUNDING ROD ELECTRODES AND GROUNDING ROD ELECTRODE COUPLINGS

IT-UNI

UNI EN ISO 20168:2021 Resistance welding - Locking tapers for electrode holders and electrode caps

Others: Two-electrode and three-electrode systems,Three-electrode test and two-electrode,Three-electrode system and two-electrode system,Three-electrode test and two-electrode