GaInAs
GaInAs, Total:5 items.
The international standard classification for "GaInAs" includes: .
The Chinese standard classification for "GaInAs" includes: Technical Management .
Professional Standard - Electron
- SJ 3244.2-1989 Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
- SJ 3249.1-1989 Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material
- SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide
- SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
- SJ 3244.5-1989 Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
gallium arsenide,GaInAs,Gallium Arsenide Enthalpy,copper indium gallium arsenic,Test method of carbon concentration in gallium arsenide,Gallium Arsenide Indium Phosphide Material Hall Migration,InGaAs Composition,Boron Content in Gallium Arsenide,InGaAs Composition,Carrier Concentration and Mobility GaAs Hall,Gallium Arsenide Solar Cells,Gallium Arsenide Material,InGaAs wavelength,Gallium Arsenide Wafer,General-purpose three-junction GaAs solar cells for space use,Space Gallium Arsenide General Purpose,Gallium Arsenide Process,Gallium Arsenide Wafer,Gallium Arsenide Single Crystal,Gallium Arsenide Single Crystal for Solar Cells
