Triode

Triode, Total:198 items.

The international standard classification for "Triode" includes: .

The Chinese standard classification for "Triode" includes: Technical management , Technical management , Electronic components .

Professional Standard - Electron

SJ 2357-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD149,3CD150 and 3CD349
SJ 1690-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD206
SJ 20230-1993 Verification regulation of model BJ2951A(JS-5A) transistor Hfe tester
SJ 1410-1978 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA98
SJ 799-1974 Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors,Type 3DG170
SJ 1483-1979 Detail specification for silicon PNP epitaxial planar high frequency low power noise transistors,Type 3CG140
SJ 2365-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD167 and 3CD367
SJ 1421-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA22
SJ 768-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD55
SJ 1422-1978 Detail specificaiton for silicon NPN high-frequency high power transistors,Type 3DA37
SJ 2284-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG145
SJ 934-1975 Detail specification for silicon NPN low frequency high power high reversse voltage transistors,Type 3DD100
SJ 2100-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS43
SJ 1469-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG101
SJ 772-1974 Detail specification for silion NPN alloy diffused low-frequency high power transistors,Type 3DD61
SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
SJ 1470-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG102
SJ 2360-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD155,3CD156 and 3CD355
SJ 1409-1978 Detail specification for silicon NPN high-frequency high pwer transistors,Type 3DA3
SJ 1430-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA89
SJ 1686-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD202
SJ 2106-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS49
SJ 2094-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS37
SJ 795-1974 Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors,Type 3DG142
SJ 783-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG101
SJ 2285-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG146
SJ 1839-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK108
SJ 2378-1983 Detail specification for silicon PNPepitaxial planar low frequency high power transistors,Type 3CD551,3CD552 and 3CD651
SJ 767-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD53 and 3DD54
SJ 1672-1980 Detail specification for silicon NPN forward AGC high frequency low power transistors,Type 3DG253
SJ 794-1974 Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors,Type 3DG141
SJ 1407-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA4
SJ 2097-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS40
SJ 1638-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD155 and 3DD156
SJ 2286-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG147
SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD267 and 3CD467
SJ 1640-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD159,3DD160 and 3DD161
SJ 1406-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA96
SJ 2219-1982 Semiconductor photocouplers in the transistor mode
SJ 791-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG122
SJ 1478-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG121
SJ 1845-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK113
SJ 2358-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD151,3CD152 and 3CD351
SJ 2275-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG85
SJ 2370-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD255,3CD256 and 3CD455
SJ 1642-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD164,3DD165 and 3DD166
SJ 935-1975 Detail specification for silicon NPN low frequency high power high reverse voltage transistors,Type 3DD101 and 3DD102
SJ 2103-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS46
SJ 2293-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG155
SJ 766-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD52
SJ 782-1974 Detail specfication for silicon NPN planar high frequency low power transistors,Type 3DG100
SJ 1476-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG114
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
SJ 2371-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD257,3CD258 and 3CD457
SJ 1415-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA28
SJ 1833-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK103
SJ 1651-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD262 and 3DD263
SJ 779-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD71
SJ 1486-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG180
SJ 789-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG120
SJ 1831-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK28
SJ 1480-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130
SJ 1431-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA39
SJ 1840-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK14
SJ 1843-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK111
SJ 2279-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG123
SJ 773-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD62 and 3DD63
SJ 1474-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG112
SJ 2271-1983 Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes
SJ 778-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD70
SJ 781-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD73
SJ 2366-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD447
SJ 2368-1983 Detail specification for silicon PNP low frequncy high voltage high power transistors,Type 3CD251,3CD252 and 3CD451
SJ 774-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD64
SJ 1653-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD267,3DD268 and 3DD269
SJ 1482-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG132
SJ 2278-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG72
SJ 1641-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD162 and 3DD163
SJ 775-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD65 and 3DD66
SJ 1418-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA10
SJ 2361-1983 Detail specification for silicon PNP low frequency low voltage high power low frequency low voltage high power transistors,Type 3CD157,3CD158 and 3CD357
SJ 780-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD72
SJ 2381-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD557,3CD558 and 3CD657
SJ 1692-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD208
SJ 1419-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA18
SJ 1636-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD151 and 3DD152
SJ 2372-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD259 and 3CD260
SJ 1426-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA21
SJ 1412-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA14
SJ 2092-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS35
SJ 1477-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG120
SJ 2282-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG143
SJ 2363-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD162 and 3Cd362
SJ 2356-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD347
SJ 2101-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS44
SJ 785-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG103
SJ 1645-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD173 and 3DD174
SJ 1674-1980 Detail specification for silicon NPN image intermediate frequency amplification end-use transistors,Type 3DG255
SJ 1408-1978 Detail specification for silicon NPN high frequency high power transistors,Type 3DA101
SJ 1644-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD170,3DD171 and 3DD172
SJ 2273-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG81
SJ 1827-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK6
SJ 1832-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK102
SJ 1471-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG103
SJ 784-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG102
SJ 2359-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD153,3CD154 and 3CD353
SJ 2148-1982 Methods of measurement for dynamic impedance of silicon current regulator transistors
SJ 2099-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS42
SJ 796-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG160
SJ 2105-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS48
SJ 790-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG121
SJ 2379-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD553,3CD554 and 3CD653
SJ 2377-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD548 3CD550 and 3CD649
SJ 2364-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3Cd164 and 3CD364
SJ 1428-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA107
SJ 1643-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD167,3DD168 and 3DD169
SJ 1414-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA102
SJ 1829-1981 Detail specification silicon NPN epitaxial planar low power switching transistors,Type 3DK5
SJ/T 2217-1982 Silicon phototransistors
SJ 1654-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD270, 3DD271 and 3Dd272
SJ 800-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG180
SJ 1646-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD175 and 3DD176
SJ 1429-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA108
SJ 1649-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors, Type 3DD257 and 3DD258
SJ 2374-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD264,3CD464
SJ 2382-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD559 and 3CD560
SJ 2376-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD647
SJ 1423-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA32
SJ 2373-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD262 and 3CD462
SJ 2289-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG151
SJ 777-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD68 and 3DD69
SJ 1427-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA92
SJ 2290-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG151
SJ 2292-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG154
SJ 1405-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA1
SJ 2277-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG115
SJ 1830-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK101
SJ 2108-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS51
SJ 1682-1980 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA151
SJ 1693-1980 Detail specification for silicon PNP low-frequency high power transistors,Type 3AD150
SJ 1689-1980 Detail specification for silicon NPN low-frequency high power transistors,Type 3DD205
SJ 1468-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG100
SJ 1639-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD157 and 3DD158
SJ 2274-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG113
SJ 2095-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS38
SJ 2283-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG144
SJ 2104-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS47
SJ 1479-1979 Detail specifiation for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG122
SJ 1652-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD264,3DD265 and 3DD266
SJ 2096-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS39
SJ 776-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD67
SJ 769-1974 Detail specification for silion NPN epitaxial planar low-frequency high power transistors,Type 3DD56 and 3DD57
SJ 771-1974 Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD59 and 3DD60
SJ 1848-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK130
SJ 786-1974 Detail specification for silicon NPN planar high frequency low power transistors,Type 3DG110
SJ 788-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG112
SJ 1655-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD275 and 3DD276
SJ 765-1974 Detail specification for silicon NPN eqitaxial planar low-frequency high power transistors,Type 3DD50 and 3DD51
SJ 1485-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG170
SJ 787-1974 Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG111
SJ 1673-1980 Detail specification for silicon NPN forward AGC high frequency low power transistors,Type 3DG254
SJ 1472-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG110
SJ 2281-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG132
SJ 1844-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK112
SJ 2362-1983 Detail specification for silicon PNP low frequency low voltage high power transistors,Type 3CD159 and 3CD160
SJ 1847-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK121
SJ 1416-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA100
SJ 2288-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG149
SJ 1846-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK120
SJ 770-1974 Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD58
SJ 1425-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA106
SJ 2369-1983 Detail specification for silicon PNP low frequency high voltage high power transistors,Type 3CD253,3CD254 and 3CD453
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 1481-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG131
SJ 1484-1979 Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG160
SJ 1648-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD255 and 3DD256
SJ 1473-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG111
SJ 2107-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS50
SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
SJ 1475-1979 Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG113
SJ 1417-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA103
SJ 1838-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29
SJ 2276-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors,Type 3DG114
SJ 2380-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors,Type 3CD555,3CD556 and 3CD655
SJ 2294-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors,Type 3DG156
SJ 801-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG181
SJ 1424-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA105
SJ 2102-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS45
SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
SJ 1637-1980 Detail specification for silicon NPN diffused mesa low-frequency high power transistors,Type 3DD153 and 3DD154
SJ 797-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors,Type 3DG161
SJ 1841-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK100
SJ 1683-1980 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA152

Professional Standard - Aerospace

QJ 1512-1988 Reliability Verification Test Method for Silicon Low Power NPN Transistor
QJ 2493-1993 Acceptance specification for microwave diodes and transistors

Professional Standard - Aviation

HB 5831-1983 Technical Requirements of Semiconductor Diode and Triode for Aviation
HB 5832-1983 Technical Specifications of Semiconductor Diode and Triode Screening for Aviation

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04023-1989 Specification for verification of BJ2970 model high power semiconductor triode tf tester

Others: cs50 type n channel junction field effect low power semiconductor switch transistor,Triode,Transistor parameters,Transistor reliability