SJ 1830-1981 in English
SUPERSEDEDDetail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK101
- Issued on:1981-09-10
- Implemented on:1982-05-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$253.00
| Standard No: | SJ 1830-1981 |
| Document status: | SUPERSEDED |
| Superseded by: |
SJ/T 1830-2016 Semiconductor discrete device 3DK101 type NPN silicon low power switching transistor detailed specification
|
| Superseded on: | 2016-09-01 |
| Title in English: | Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK101 |
| Title in Chinese: | ３ＤＫ１０１型ＮＰＮ硅外延平面小功率开关三极管 |
| Language: | English |
| File Format: | Electronic (PDF) |
| Delivery: | Via email within 1~3 business days |
| Issued on: | 1981-09-10 |
| Implemented on: | 1982-05-01 |
| Chinese Classification: | F01-Technical management |
| Professional Classification: | SJ-Electronics |
| Related Keywords: | detail specification
silicon npn epitaxial planar low power specification |
| Related Topics: | Triode
Silicon epitaxy npn Small casting machine About the three-electrode system infrared switch epitaxy small casting as1830 cross-correlation power micro balance About silicon |
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