About the three-electrode system

About the three-electrode system, Total:103 items.

The international standard classification for "About the three-electrode system" includes: Motors , Generators .

The Chinese standard classification for "About the three-electrode system" includes: Electrical system and equipment , Technical management , Technical management , Asynchronous machine , Synchronous machine .

Professional Standard - Aviation

HB 5659-1981 Liquid Electric Switch for Tripolar Glass

Professional Standard - Electron

SJ 1829-1981 Detail specification silicon NPN epitaxial planar low power switching transistors,Type 3DK5
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
SJ 2101-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS44
SJ 2106-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS49
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
SJ 2104-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS47
SJ 2103-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS46
SJ 1842-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK110
SJ 2102-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS45
SJ 2100-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS43
SJ 2105-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS48
SJ 1832-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK102
SJ 2094-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS37
SJ 1838-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29
SJ 1834-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK104
SJ 1827-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK6
SJ 2097-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS40
SJ 1841-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK100
SJ 1847-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK121
SJ 1844-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK112
SJ 1825-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK21
SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
SJ 1826-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK100
SJ 1845-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK113
SJ 2107-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS50
SJ 1840-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK14
SJ 1846-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK120
SJ 2108-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS51
SJ 2096-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS39
SJ 2093-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS36
SJ 2095-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS38
SJ 1833-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK103
SJ 1843-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK111
SJ 2099-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS42
SJ 1828-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK53
SJ 2219-1982 Semiconductor photocouplers in the transistor mode
SJ 1830-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK101
SJ 2098-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS41
SJ 2092-1982 Detail specification for N channel junction field-effect low power switching transistors,Type CS35
SJ 1839-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK108
SJ 1831-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK28
SJ 1848-1981 Detail specification for silicon PNP epitaxial planar low power switching transistors,Type 3CK130

工业和信息化部

XB/T 702-2022 Three-electrode system test method for testing the electrochemical properties of rare earth hydrogen storage alloy powder for metal hydride-nickel battery negative electrodes

Professional Standard - Machinery

JB/T 6741-2013 YSD Series two-speed pole-changing three-phase asynchronous motors
JB/T 6741-1993 YSD Series Pole Change Double Speed Three-phase Asynchronous Motors
JB/T 10747-2007 Specification for integrated salient pole brushless three - Phase synchronous generator

Xizang Provincial Standard of the People's Republic of China

DB54/T 0274.1-2023 The Third Pole Brand Evaluation System on Earth Part 1: General Principles

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04025-1989 Q04 type small and medium power crystal triode switch parameter measurement standard device verification regulations
JJG(电子) 04026-1989 BJ2985 type crystal triode maintenance voltage tester verification regulations

Association Francaise de Normalisation

NF C64-132:1987 High voltage switchgear - Three-pole switches with a rated voltage of 24 kV intended for operating capacitor bank banks
NF L58-362:1977 TRIPLE POLE CHANGEOVER CONTACTORS WITH AUXILIARY CIRCUIT.
NF L58-361:1977 Triple pole, normally open, contactors with auxiliary circuit.
NF C64-102:1987 High voltage switchgear - Three-pole circuit breakers with a rated voltage of 24 kV intended for the protection of single capacitor banks
NF L58-525:1966 SWITCHGEAR FOR AIRCRAFT. TRIPLE POLE PUSH-BUTTON OPERATED CIRCUIT-BREAKER.
NF L58-533*NF EN 4728:2015 Aerospace series - Circuit breakers, single and three poles dummies - Product standard
NF EN ISO 20168:2021 Resistance welding - Clamping cones for electrode holders and electrode tips
NF L58-363:1965 Switchgear for aircraft. Sealed triple pole contactors.
NF EN 62493:2015 Évaluation d'un équipement d'éclairage relativement à l'exposition humaine aux champs électromagnétiques
NF EN 62493/A1:2022 Évaluation d'un équipement d'éclairage relativement à l'exposition humaine aux champs électromagnétiques
NF C85-211:1982 Harmonized system of quality assessment for electronic components. Blank detail specification. Industrial heating triodes.
UTE C86-614:1977 Electronic components - Bipolar switching transistors - Collection of special specifications

International Organization for Standardization (ISO)

ISO/IEC GUIDE 16:1978 Code of principles on third party certification systems and related standards
ISO 24598:2019 Welding consumables — Solid wire electrodes, tubular cored electrodes and electrode-flux combinations for submerged arc welding of creep-resisting steels — Classification

SCC

MIL MIL-DTL-3950/16A-2008 Switches, Toggle, Three Pole, 4 Amperes, Low Level, Environmentally Sealed
MIL MIL-DTL-3950/16B-2019 Switches, Toggle, Three Pole, 4 Amperes, Low Level, Environmentally Sealed
MIL MIL-DTL-83731/24B-2019 Switches, Toggle, Three Pole, 4 Amperes, Low Level, Environmentally Sealed
MIL MIL-DTL-83731/24A-2008 Switches, Toggle, Three Pole, 4 Amperes, Low Level, Environmentally Sealed
BS PD IEC/TS 62607-4-5:2017 Nanomanufacturing. Key control characteristics-Cathode nanomaterials for nano-enabled electrical energy storage. Electrochemical characterization, 3-electrode cell method
MIL MIL-DTL-3950/16-2006 SWITCHES, TOGGLE, MOMENTARY, THREE POLE, 4 AMPERES, LOW LEVEL, ENVIRONMENTALLY SEALED
DIN EN 4728 E:2014 Draft Document - Aerospace series - Circuit breakers, single and three poles dummies - Product standard; German and English version FprEN 4728:2014
CEI 11-32:2000 Electricity production systems connected to category III systems

British Standards Institution (BSI)

PD IEC/TS 62607-4-5:2017 Nanomanufacturing. Key control characteristics. Cathode nanomaterials for nano-enabled electrical energy storage. Electrochemical characterization, 3-electrode cell method
BS IEC 60747-7-5:2005 Semiconductor devices — Discrete devices — Part 7 - 5 : Bipolar transistors for power switching applications

Defense Logistics Agency

DLA MIL-DTL-3950/16 A-2008 SWITCHES, TOGGLE, THREE POLE, 4 AMPERES, LOW LEVEL, ENVIRONMENTALLY SEALED
DLA MIL-DTL-83731/24 A-2008 SWITCHES, TOGGLE, THREE POLE, 4 AMPERES, LOW LEVEL, ENVIRONMENTALLY SEALED
DLA SMD-5962-97581 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, TRIPLE 3-INPUT POSITIVE AND GATE, MONOLITHIC SILICON

AIA/NAS - Aerospace Industries Association of America Inc.

NAS1071-1978 Switch - Toggle Double Pole@ Three Position (Rev 2)

Korean Agency for Technology and Standards (KATS)

KS C IEC 60747-6-2:2006 Semiconductor devices－Discrete devices－Part 6：Thyristors－Section two：Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100 A
KS C IEC 60747-7-3-2006(2021) Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
KS C 9606-1989(2010) SHAPES AND DIMENSIONS OF SOPT WELDING ELECTRODES
KS C IEC 60747-7-3-2021 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors－Section three：Blank detail specification for bipolar transistors for switching applications
KS B ISO 4400:2002 Fluid power systems and components-Three-pin electrical plug connectors with earth contact-Characteristics and requirements

GSO

GSO IEC TS 62607-4-5:2021 Nanomanufacturing - Key control characteristics - Part 4-5: Cathode nanomaterials for nano-enabled electrical energy storage - Electrochemical characterization, 3-electrode cell method
BH GSO IEC TS 62607-4-5:2022 Nanomanufacturing - Key control characteristics - Part 4-5: Cathode nanomaterials for nano-enabled electrical energy storage - Electrochemical characterization, 3-electrode cell method

IECQ - IEC: Quality Assessment System for Electronic Components

QC 750104-1991 Semiconductor Devices Discrete Devices Part 7: Bipolar Transistors Section Three - Blank Detail Specification for Bipolar Transistors for Switching Applications (IEC 747-7-3 ED 1)

RU-GOST R

GOST R 59566-2021 Nanomanufacturing. Key control characteristics. Part 4-5. Cathode nanomaterials for nano-enabled electrical energy storage. Determination of electrochemical characteristics with 3-electrode cell
GOST 26169-1984 Radioelectronic equipment electromagnetic compatibility. High-power bipolar high-frequency linear transistors intermodulation component coefficient standards
GOST 21107.9-1976 Gas-discharge devices. Methods of measurement of electrial parameters of pulse thyratrons

SAE - SAE International

SAE ARP255-2004 SWITCH@ TOGGLE@ LEVER LOCK TYPE - SINGLE POLE - THREE HOLE MOUNTING
SAE ARP256-2004 SWITCH@ TOGGLE@ LEVER LOCK TYPE - DOUBLE POLE - THREE HOLE MOUNTING

CENELEC - European Committee for Electrotechnical Standardization

EN 150004:1991 Blank Detail Specification: Bipolar Transistors for Switching Applications

German Institute for Standardization

DIN 41700-2:1989 Electrical communication engineering; three pole plug
DIN EN 4728:2015-09 Aerospace series - Circuit breakers, single and three poles dummies - Product standard; German and English version EN 4728:2015
DIN EN 3774-003:1999-08 Aerospace series - Circuit breakers, three-pole, temperature compensated, rated currents 2 A to 25 A, switching capacity 65 I<(Index)n> - Part 003: Metric thread terminals; product standard; German version EN 3774-003:1999 / Note: Applies in conj...
DIN 45980-1002:1977 Harmonized system of quality assessment for electronic components; blank detail specification: industrial heating triodes

International Electrotechnical Commission (IEC)

IEC 60747-6:2000 Semiconductor devices - Part 6: Thyristors

Japanese Industrial Standards Committee (JISC)

JIS C 7233:1978 Reliability assured bi-directional triode thyristors (low current)
JIS C 7234:1978 Reliability assured bi-directional triode thyristors (high and medium current)

CZ-CSN

CSN 35 8768-1983 Semiconductor switching diodes. Electric parameters measurement methods

Standard Association of Australia （SAA）

HB 18.28-2005 Conformity assessment - Guidance on a third-party certification system for products

Danish Standards Foundation

DS/ISO 4400:1989 Fluid power systems and components. Three-pin electrical plug connector. Characteristics and requirements

KR-KS

KS B ISO 26304-2016 Welding consumables — Solid wire electrodes, tubular cored electrodes and electrode-flux combinations for submerged arc welding of high strength steels — Classification