Semiconductor Nitrogen

Semiconductor Nitrogen, Total:45 items.

The international standard classification for "Semiconductor Nitrogen" includes: Software development and system documentation , Ferroalloys , Chemical analysis , Rectifiers. Convertors. Stabilized power supply .

The Chinese standard classification for "Semiconductor Nitrogen" includes: Software engineering , Steel and iron alloy analysis method , Power semiconductor device and parts , Transformer , Industrial gas and chemical gas .

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Group Standards of the People's Republic of China

• T/CECA 35-2019 Metal oxide semiconductor gas sensor
• T/CIECCPA 007-2024 Semiconductor Industry Nitrogen Oxide Emission Requirements

国家市场监督管理总局、中国国家标准化管理委员会

• GB/T 36646-2018 Software component management—Management information model
• GB/T 24583.2-2019 Vanadium-nitrogen—Determination of nitrogen content—Thermal conductimetric method after fusion in a current of inert gas

Professional Standard - Machinery

• JB/T 11623-2013 Thick film metal oxide semiconductor gas sensor
• JB/T 9644-1999 Reactor for semiconductor electric drive
• JB/T 8736-1998 Aluminum Nitride Ceramics Substrate Intended to Be Used in Power Semiconductor Modules

工业和信息化部

• YB/T 4529-2016 Nitrogen-bearing ferromanganese. Determination of nitrogen content. Thermal conductimetric method after fusion in a current of inert gas
• YB/T 4566.1-2016 Ferrovanadium nitride. Determination of conduct. Thermal conductimetric method after fusion in a current of inert gas
• YB/T 4528-2016 Nitrogen-bearing ferrochromium and nitride ferrochrome with high nitrogen content. Determination of nitrogen contenr. Thermal conductimetric method after fusion in a current of inert gas

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

• GB/T 34971-2017 Guide for gaseous effluent handling in semiconductor industry

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

• GB/T 13422-2013 Semiconductor converters—Electrical test methods
• GB/T 24583.2-2009 Vanadium—Nitrogen alloy—Determination of nitrogen content—Thermal conductimetric method after fusion in a current of inert gas

国家机械工业局

• JB 9644-1999 Reactor for semiconductor electric transmission

RU-GOST R

• GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination
• GOST 28578-1990 Semiconductor devices. Mechanical and climatic test methods

SCC

• BS DD ISO/TS 11725:2002 Solid mineral fuels. Determination of nitrogen. Semi-micro gasification method
• SPC GB/T 24583.2-2019 Vanadium-nitrogen -- Determination of nitrogen content -- Thermal conductimetric method after fusion in a current of inert gas (TEXT OF DOCUMENT IS IN CHINESE)
• DANSK DS/IEC 63284:2022 Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
• AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
• BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors

International Organization for Standardization (ISO)

• ISO/TS 11725:2002 Solid mineral fuels - Determination of nitrogen - Semi-micro gasification method

CZ-CSN

• CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices

SE-SIS

• SIS SEN 01 26 51-1969 Symbols for electrical diagrams Semi-conductors

British Standards Institution (BSI)

• BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
• BS IEC 63229:2021 Semiconductor devices. Classification of defects in gallium nitride epitaxial film on silicon carbide substrate
• BS IEC 63284:2022 Semiconductor devices. Reliability test method by inductive load switching for gallium nitride transistors
• BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
• BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
• BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
• BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
• BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements

YU-JUS

• JUS N.R1.500-1980 Semioonductor ?evices. Acceptance. Electrical tests

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

• IEEE 641-1987 STANDARD DEFINITIONS AND CHARACTERIZATION OF METAL NITRIDE OXIDE SEMICONDUCTOR ARRAYS

GSO

• GSO IEC 63284:2024 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
• GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
• BH GSO 2403:2015 GASES – MEDICAL NITROGEN GAS
• GSO 2403:2014 GASES – MEDICAL NITROGEN GAS
• OS GSO 2403:2014 GASES – MEDICAL NITROGEN GAS

German Institute for Standardization

• DIN 50450-4:1993 Testing of materials for semiconductor technology; determination of impurities in carrier gases and dopant gases; determination of C<(Index)1>-C<(Index)3>-hydrocarbons in nitrogen by gas-chromatography

RO-ASRO

• STAS 11381/13-1981 Graphical symbols for electrical diagrams SEMICONDUCTOR DEVICES

International Electrotechnical Commission (IEC)

• IEC 63284:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
• IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
• IEC 63229:2021 Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

Institute of Electrical and Electronics Engineers (IEEE)

• ANSI/IEEE Std 641-1987 IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

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