GB/T 14849.4-2014 in English
VALIDMethods for chemical analysis of silicon metal - Part 4:Determination of impurity contents - Inductively coupled plasma atomic emission spectrometric method
- Issued on:2014-12-05
- Implemented on:2015-08-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
$117.00
《GB/T 14849.4-2014工业硅化学分析方法 第4部分：杂质元素含量的测定 电感耦合等离子体原子发射光谱法》由TC243（全国有色金属标准化技术委员会）归口，TC243SC1（全国有色金属标准化技术委员会轻金属分会）执行，主管部门为中国有色金属工业协会。
GB/T14849的本部分规定了工业硅中铁、铝、钙、锰、钛、镍、铜、铬、钒、镁、钴、磷、钾、钠、铅、锌、硼
含量的测定方法。
本部分适用于工业硅中铁、铝、钙、锰、钛、镍、铜、铬、钒、镁、钴、磷、钾、钠、铅、锌、硼量的测定。
Scope
This part of GB/T 14849 specifies the methods for the determination of iron, aluminum, calcium, manganese, titanium, nickel, copper, chromium, vanadium, magnesium, cobalt, phosphorus, potassium, sodium, lead, zinc and boron in industrial silicon. This part is applicable to the determination of iron, aluminum, calcium, manganese, titanium, nickel, copper, chromium, vanadium, magnesium, cobalt, phosphorus, potassium, sodium, lead, zinc and boron in industrial silicon. The determination range of each element is shown in Table 1.
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