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electronic grade triethylgallium electronic grade triethylgallium introduction interpretation itemindicator triethylgallium purity practical application cases triethylgallium key electronic material construction project foundation acceptance system index silicon wafer size
GB/T 36656-2018 in English

GB/T 36656-2018 in English

VALID

Electronic grade triethylgallium

  • Issued on:2018-09-17
  • Implemented on:2019-01-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $160.00
$156.00
Standard No: GB/T 36656-2018
Document status: VALID
Title in English: Electronic grade triethylgallium
Title in Chinese: 电子级三乙基镓
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2018-09-17
Implemented on: 2019-01-01
ICS Classification: 71.100.20-Gases for industrial application
Chinese Classification: G86-Industrial gas and chemical gas
Professional Classification: GB-National Standard
Related Keywords: electronic grade triethylgallium
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《GB/T 36656-2018电子级三乙基镓》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。


Introduction

Interpretation of the National Standard of the People's Republic of China GB/T 36656—2018

ItemIndicator
Triethylgallium purity (mass fraction)/10-299.999 95
Content of metal elements and other elementsSilver (Ag) content/(μg/g)< 0.2
Impurity analysis methodAluminum (Al) content/(μg/g)< 0.5

1. Background of Standardization and Analysis of Technology Evolution

GB/T 36656-2018 standard is formulated for the technical requirements of electronic grade triethylgallium, and is mainly applicable to triethylgallium products prepared by three chemical synthesis methods. The standard was proposed and coordinated by the National Technical Committee for Semiconductor Equipment and Materials Standardization, and the drafting units include Jiangsu Nanda Optoelectronic Materials Co., Ltd. and China Electronics Technology Standardization Institute.


2. Comparison of standard frameworks

Standard dimensionsGB/T 36656—2018
Technical requirementsPurity index99.999 95 (mass fraction)
Impurity contentSilver, aluminum, arsenic and other elements must meet strict limits
Test methodsInductively coupled plasma atomic emission spectrometry (ICP-OES)For analysis of metal elements and other impurities

3. Professional term explanation and practical application cases

Triethylgallium (C6H15Ga) is a key electronic material, mainly used to grow compound semiconductor thin films. Its purity and impurity content directly affect the performance of the final product. For example, in semiconductor manufacturing, even trace amounts of metal impurities can cause device failure.

4. Implementation suggestions

  • Strictly control the quality of raw materials and process parameters during the production process to ensure compliance with the clean plant requirements specified in GB/T 50073.
  • Use highly sensitive ICP-OES and NMR equipment for impurity analysis to ensure the accuracy of the test results.
  • Establish a complete quality traceability system to manage each batch of products throughout their life cycle.

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