gallium overpotential
gallium overpotential, Total:27 items.
The international standard classification for "gallium overpotential" includes: Chemical analysis of metals , Semiconducting materials , Testing of metals , Salts , Glass products , Gases for industrial application , Advanced ceramics .
The Chinese standard classification for "gallium overpotential" includes: Rare metals and their alloys analysis method , Semimetal and semiconductor material in general , Metal physical property test method , Industrial technical glass , Industrial gas and chemical gas , Quartz crystal and piezoelectric element , Compound semiconductor material .
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB 11068-1989 GaAs Epitaxial Layer Carrier Concentration Capacitance-Voltage Measurement Method
- GB/T 11068-1989 Gallium arsenide epitaxial layer-Determination of carrier concentration-Voltage-capacitance method
- GB/T 8760-1988 Gallium arsenide single crystal; Determination of dislocation density
- GB/T 11068-2006 Gallium arsenide epitaxial layer - determination of carrier concentration voltage-capacitance method
- GB/T 8760-2006 Gallium arsenide single crystal-determination of dislocation density
- GB/T 32282-2015 Test method for disoclation density of GaN single crystal—Cathodoluminescence spectroscopy
- GB/T 25075-2010 Gallium arsenide single crystal for solar cell
- GB/T 41744-2022 Substrate glass for copper indium gallium selenide thin film solar cell
- GB 8760-1988 Gallium arsenide single crystal－Determination of dislocation density
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 37007-2018 Electronic grade trimethylgallium
- GB/T 8760-2020 Test method for dislocation density of monocrystal gallium arsenide
- GB/T 36656-2018 Electronic grade triethylgallium
Group Standards of the People's Republic of China
- T/ZZB 1790-2020 Sputter equipment for Cu-In-Ga-Se thin film solar cells
- T/GDC 69-2020 Gallium Nitride Charger
Professional Standard - Building Materials
- JC/T 2148-2012 Langasite piezoelectric crystal
Professional Standard - Electron
- SJ/T 11490-2015 Test method for measuring etch pit density(EPD) in low dislocation density gallium arsenide wafers
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会
- GB/T 35305-2017 Monocrystalline gallium arsenide polished wafers for solar cell
Guangxi Provincial Standard of the People's Republic of China
- DB45/T 2108-2019 Determination of Gallium Content in Target Materials for Copper Indium Gallium Selenium Solar Photovoltaic Cells by Inductively Coupled Plasma Atomic Emission Spectrometry
Xinjiang Provincial Standard of the People's Republic of China
- DB65/T 3160-2014 Automatic reset type over and under voltage protector
- DB65/T 3160-2010 Automatic resetting over and under-voltage protection device
Military Standard of the People's Republic of China-General Armament Department
- GJB 7392-2011 General specification for GaInP
/GaAs/Ge solar cell for space application - GJB 5247-2004 General specification for gallium arsenide/germanium solar cells for space applications
Professional Standard - Aerospace
- QJ 1710-1989 General specification for potentiometer overload sensors
CZ-CSN
- CSN 34 5941-1984 Gallium arsenide and gallium phospide monocrystalline. Determination of resistivity and Hall coefficient
RU-GOST R
- GOST 25948-1983 Monocrystal gallium arsenide and gallium phosphide. Measurement of specific electric resistance and hall-coefficient
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JES2-1992 Transistor, Gallium Arsenide Power Fet, Generic Specification
GOSTR
- GOST R 59012-2020 Hard coals. Determination of oxidation by potentiometric titration
Positive potential,gallium overpotential,Overpotential,redox potential gallium,gallium electrode potential
