crystal growth
crystal growth, Total:37 items.
The international standard classification for "crystal growth" includes: Semiconducting materials , Fiber and cables , Physicochemical methods of analysis , Raw materials and raw glass , Testing of metals , Non-destructive testing of metals , Man-made fibres , Other standards related to optics and optical measurements , Flat steel products and semi-products .
The Chinese standard classification for "crystal growth" includes: Special electronic technology material , Optical communication equipment , Electron optics and other physical optics instrument , Quartz glass , Metal physical property test method , Semimetal and semiconductor material in general , Metal nondestructive testing method , Chemical fibre , Power semiconductor device and parts , X ray, magnetic powder, fluorescent light and other defectoscope , Steel sheet and strip .
Group Standards of the People's Republic of China
- T/CTESGS 02-2023 Technical guidelines for horizontal ecological protection compensation in the Yangtze River basin
- T/CEMIA 024-2021 Quartz crucible manufacturing practices for semiconductor monosilicon growth
- T/CEMIA 023-2021 Quartz crucible for semiconductor monosilicon growth
- T/ZS 0596-2024 Quartz crucible for growth of photovoltaic monocrystalline silicon
- T/CEMIA 005-2018 Quartz crucible manufacturing practices for photovoltaic single crystal silicon growth
- T/NXCL 31-2024 Conical seed crystals for Czochralski monocrystalline silicon growth
- T/NXCL 28-2024 Synthetic quartz crucible for semiconductor grade monocrystalline silicon growth
- T/ZZB 0044-2016 TDR-series crystal growing furnaces
- T/CEMIA 004-2018 Quartz crucibles for single crystal silicon growth in photovoltaic industry
Professional Standard - Building Materials
- JC/T 1048-2007 Fused quartz crucibles for single crystal silicon growth
- JC/T 1048-2018 Fused quartz crucibles for single crystal silicon growth
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 46185-2025 Liquid crystalline polyarylate filament yarns
- GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
- GB/T 39137-2020 Determination for the orientation of refractory metal single crystal
- GB/T 34210-2017 Test method for determining the orientation of sapphire single crystal
- GB/T 45823-2025 High purity sand applied inside quartz crucible for photovoltaic monocrystalline silicon growth
- GB/T 1555-1997 Test methods for determining the orientation of a semiconductor single crystal
- GB/T 1555-2023 Test methods for determining the orientation of a semiconductive single crystal
- GB/T 43610-2023 Microbeam analysis—Analytical electron microscopy—Method of determination for apparent growth direction of wirelike crystals by transmission electron microscopy
Professional Standard - Machinery
- JB/T 4192-1996 Bi-directional Thyristor
- JB/T 5482-2011 X-ray Orientation apparatus
Hebei Provincial Standard of the People's Republic of China
- DB13/T 5631-2022 Technical specifications for the production of quartz crucibles for the growth of single crystal silicon for electronic materials
Professional Standard - Electron
- SJ/T 11500-2015 Test method for measuring crystallographic orientation of monocrystalline silicon carbide
Professional Standard - Ferrous Metallurgy
- YB/T 5224-1993 Grain oriented silicon steel strip
British Standards Institution (BSI)
- 15/30292710 DC BS ISO 19214. Guidelines for growth direction determination of wirelike crystals by transmission electron microscopy
- BS ISO 19214:2024 Microbeam analysis. Analytical electron microscope. Method of determination for apparent growth direction of nanocrystals by transmission electron microscopy
- 24/30474499 DC BS ISO 19214 Microbeam analysis. Analytical electron microscopy. Method of determination for apparent growth direction of wirelike crystals by transmission electron microscopy
Military Standards (MIL-STD)
- DOD A-A-53860-1989 NIPPER, INGROWN TOENAIL
American Society for Testing and Materials (ASTM)
- ASTM F41-90 Method for growing silicon single crystal by floating zone method and evaluating polycrystalline silicon ingot
- ASTM F1723-02 Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
International Organization for Standardization (ISO)
- ISO/CD 19214:2023 Microbeam analysis — Analytical electron microscopy — Method of determination for apparent growth direction of wirelike crystals by transmission electron microscopy
- ISO 19214:2024 Microbeam analysis — Analytical electron microscopy — Method of determination for apparent growth direction of nanocrystals by transmission electron microscopy
International Electrotechnical Commission (IEC)
- IEC PAS 62483:2006 Test method for measuring whisker growth on tin and tin alloy surface finishes
American Society of Heating, Refrigerating and Air-Conditioning Engineers (ASHRAE)
- ASHRAE 3725-1993 Approximate Numerical Model of Falling-Film Ice Crystal Growth for Cool Thermal Energy Storage
Korean Agency for Technology and Standards (KATS)
- KS M 6721-2018(2023) Testing method of cut growth using ross flexing apparatus
(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
- JEDEC JESD22A121.01-2005 Test Method for Measuring Whisker Growth on Tin and Tin Alloy Surface Finishes
- JEDEC JESD22A121A-2008 Test Method for Measuring Whisker Growth on Tin and Tin Alloy Surface Finishes
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