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Database: 365,228(8 Aug 2026)

Semiconductor Optical Properties

Semiconductor Optical Properties, Total:79 items.

The international standard classification for "Semiconductor Optical Properties" includes: Optoelectronics. Laser equipment .

The Chinese standard classification for "Semiconductor Optical Properties" includes: Others , Laser device , Special electronic technology material .


Group Standards of the People's Republic of China

Military Standard of the People's Republic of China-General Armament Department

  • GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
  • GJB 33/18-2011 Semiconductor optoelectronic device.Detail specification for type GO417 bidirectional analog switch semiconductor photocoupler
  • GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
  • GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices

Hebei Provincial Standard of the People's Republic of China

  • DB13/T 5120-2019 Specifications for DC performance test of FP and DFB semiconductor laser chips for optical communication

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
  • GB/T 15167-1994 General specification for light source of semiconductor lasers
  • GB/T 31358-2015 General specification for semiconductor lasers

Jilin Provincial Standard of the People's Republic of China

Professional Standard - Electron

  • SJ/T 11397-2009 Phosphors for light emitting diodes
  • SJ 50033/109-1996 Semiconductor optoelectronic devices - Detail specification for Types GJ903T and GJ9032T and GJ9034T semiconductor laser diodes

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

  • GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers

HU-MSZT

British Standards Institution (BSI)

  • BS EN 62149-8:2014 Fibre optic active components and devices. Performance standards. Seeded reflective semiconductor optical amplifier devices
  • BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
  • BS EN 62149-9:2014 Fibre optic active components and devices. Performance standards. Seeded reflective semiconductor optical amplifier transceivers
  • BS ISO 17915:2018 Optics and photonics. Measurement method of semiconductor lasers for sensing
  • BS EN 61207-7:2013 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS EN 61207-7:2014 Expression of performance of gas analyzers. Tuneable semiconductor laser gas analyzers
  • BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
  • BS EN 62779-2:2016 Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
  • BS IEC 62951-7:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor
  • BS EN 61207-7:2013(2015) Expression of performance of gas analyzers Part 7 : Tuneable semiconductor laser gas analyzers
  • BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
  • PD IEC TR 61292-9:2023 Optical amplifiers. Semiconductor optical amplifiers (SOAs)
  • 19/30404095 DC BS EN IEC 60747-5-4. Semiconductor devices. Part 5-4. Optoelectronic devices. Semiconductor lasers
  • BS IEC 62951-4:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices

International Organization for Standardization (ISO)

  • ISO 17915:2018 Optics and photonics - Measurement method of semiconductor lasers for sensing
  • ISO/TS 17915:2013 Optics and photonics.Measurement method of semiconductor lasers for sensing

GSO

  • OS GSO ISO/TS 17915:2015 Optics and photonics -- Measurement method of semiconductor lasers for sensing
  • BH GSO ISO/TS 17915:2017 Optics and photonics -- Measurement method of semiconductor lasers for sensing
  • GSO ISO/TS 17915:2015 Optics and photonics -- Measurement method of semiconductor lasers for sensing
  • GSO IEC 62779-2:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
  • OS GSO IEC 60747-5-4:2014 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • GSO IEC 60747-5-4:2014 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • BH GSO IEC 60747-5-4:2016 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers

SCC

  • BS PD ISO/TS 17915:2013 Optics and photonics. Measurement method of semiconductor lasers for sensing
  • 12/30261676 DC BS EN 62779-2. Semiconductor devices. Semiconductor interface for human body communication. Characterization of interfacing performances
  • CEI EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication Part 2: Characterization of interfacing performances
  • CEI EN 61207-7/EC:2014 Expression of performance of gas analyzers Part 7: Tunable semiconductor laser gas analyzers
  • CEI EN 61207-7:2014 Expression of performance of gas analyzers Part 7: Tunable semiconductor laser gas analyzers
  • DANSK DS/EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • DANSK DS/EN 61207-7/AC:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • BS PD IEC TR 61292-9:2023 Optical amplifiers-Semiconductor optical amplifiers (SOAs)
  • BS PD IEC/TR 61292-9:2013 Optical amplifiers-Semiconductor optical amplifiers (SOAs)
  • BS PD IEC/TR 61292-9:2017 Optical amplifiers-Semiconductor optical amplifiers (SOAs)

RU-GOST R

  • GOST R 59740-2021 Optics and photonics. Semiconductor lasers for the determination of low concentrations of substances. Methods for measuring characteristics
  • GOST R 59605-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Terms and definitions
  • GOST R 59607-2021 Optics and photonics. Semiconducting photoelectric detectors. Photoelectric and photoreceiving devices. Methods of measuring photoelectric parameters and determining characteristics
  • GOST 24458-1980 Semiconductor optoelectronic couplers. Essential parameters
  • GOST R 50471-1993 Semiconductor photoemitters. Measuring method for halfintensity angle

International Electrotechnical Commission (IEC)

  • IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 62149-8:2014 Fibre optic active components and devices - Performance standard - Part 8: Seeded reflective semiconductor optical amplifier devices
  • IEC 62149-9:2014 Fibre optic active components and devices - Performance standards - Part 9: Seeded reflective semiconductor optical amplifier transceivers
  • IEC 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers
  • IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
  • IEC 62007-2:1999 Semiconductor optoelectronic devices for fibre optic system applications - Part 2: Measuring methods

Association Francaise de Normalisation

  • XP CEN/TS 16599:2014 Photocatalysis - Determination of irradiation conditions to test the photocatalytic properties of semiconductor materials
  • NF C46-251-7*NF EN 61207-7:2014 Expression of performance of gas analyzers - Part 7 : tunable semiconductor laser gas analyzers
  • NF C96-779-2*NF EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2 : characterization of interfacing performances
  • NF EN 61207-7:2014 Gas analyzer performance expression - Part 7: Tunable semiconductor laser gas analyzers
  • NF EN 62779-2:2016 Dispositifs à semiconducteurs - Interface à semiconducteurs pour les communications via le corps humain - Partie 2 : caractérisation des performances d'interfaçage

ESD - ESD ASSOCIATION

RO-ASRO

  • STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics
  • STAS 12258/7-1987 OPTOELECTRONIC SEMICONDIC- TOH DEVICES PHOTOVOLTAIC CELLS Terminology and essential cliarac! eristics
  • STAS 6693/2-1975 Semiconductor devices TRANSISTORS Methods for measuring electrical properties

German Institute for Standardization

  • DIN EN 61207-7:2015-07 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (IEC 61207-7:2013); German version EN 61207-7:2013 / Note: Applies in conjunction with DIN EN 61207-1 (2011-04).

Spanish Association for Standardization (UNE)

  • UNE-EN 61207-7:2013/AC:2015 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in September of 2015.)
  • UNE-EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers (Endorsed by AENOR in January of 2014.)
  • UNE-EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances (Endorsed by AENOR in July of 2016.)

European Committee for Electrotechnical Standardization(CENELEC)

  • EN 62779-2:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 2: Characterization of interfacing performances
  • EN 61207-7:2013 Expression of performance of gas analyzers - Part 7: Tuneable semiconductor laser gas analyzers

IEC - International Electrotechnical Commission

  • IEC 62951-7:2019 Semiconductor devices – Flexible and stretchable semiconductor devices – Part 7: Test method for characterizing the barrier performance of thin film encapsulation for flexible organic semiconductor (Edition 1.0)

European Committee for Standardization (CEN)

  • PD CEN/TS 16599:2014 Photocatalysis - Irradiation conditions for testing photocatalytic properties of semiconducting materials and the measurement of these conditions