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Database: 365,228(8 Aug 2026)

Hybrid silicon

Hybrid silicon, Total:54 items.

The international standard classification for "Hybrid silicon" includes: Refractories , Semiconducting materials , Other non-ferrous metals and their alloys , Aluminium and aluminium alloys , Chemical analysis , Auxiliary materials and additives for plastics , Testing of metals , Chemical analysis of metals , Abrasives .

The Chinese standard classification for "Hybrid silicon" includes: Special refractory , Technical Management , Siliceous refractory , Semimetal and semiconductor material analysis method , Fireproof material in general , Semimetal and semiconductor material in general , Metal physical property test method , Rare metals and their alloys analysis method , Light metals and their alloys analysis method , Electron optics and other physical optics instrument , Carbon black , Grinding material and apparatus .


Group Standards of the People's Republic of China

  • T/CNIA 0017-2019 Determination of Impurity Content in Chlorosilanes for Polysilicon by Inductively Coupled Plasma Mass Spectrometry
  • T/CNIA 0061-2020 Determination of Impurity Content in Silicon Tetrachloride for Silicon Epitaxy by Inductively Coupled Plasma Mass Spectrometry
  • T/CSTM 00032-2020 Array of LYSO:Ce scintillation crystal
  • T/QGCML 4001-2024 Low-angle offset filters based on boron-doped hydrogenated silicon
  • T/CASAS 009-2019 Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry
  • T/CSTM 00035-2020 Cerium-doped yttrium oxyorthosilicate scintillation crystal

Military Standard of the People's Republic of China-General Armament Department

  • GJB 1803-1993 Test methods for silica and impurity elements in high-purity silica sol

Professional Standard - Ferrous Metallurgy

  • YB/T 4035-1991 Silicon nitride bonded silicon carbide bricks for blast furnace
  • YB/T 4035-2007 Silicon nitride bonded silicon carbide bricks
  • YB/T 174.4-2000 Chemical analysis for silicon nitride bonded silicon carbide product. Determination of iron oxide content. o-Phenanthroline photometric method

Professional Standard - Electron

  • SJ 2594-1985 Method for the analysis of boron and metalic impurities in pure SiC14 - Spectro-chemical method

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 14849.1-1993 Silicon metal-Determination of iron content-1,10-Phenanthroline spectrophotometric method
  • GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
  • GB/T 6901.4-2004 Chemical analysis of silica refractories-Part 4: Determination of iron oxide-o-phenanthroline photometric method
  • GB/T 14849.1-2007 Methods for chemical analysis of silicon metal—Part 1:Determination of iron content—1 10-Phenanthrolion spectrophotometric method
  • GB/T 20176-2006 Surface chemical analysis-Secondary-ion mass spectrometry-Determination of boron atomic concentration in silicon using uniformly doped materials
  • GB/T 6901.4-1986 Silica refractories--Determination of iron oxide content-0-phenanthroline photometric method
  • GB/T 16555.5-1996 Chemical analysis for silicon carbide refractories--Determination of ferric oxide--o-Phenanthroline photometric method
  • GB/T 12690.7-2003 Neodymium and neodymium oxide-Determination of lanthanum oxide, cerium oxide, praseodymium oxide, s
  • GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
  • GB/T 4298-1984 The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

Professional Standard - Chemical Industry

Professional Standard - Nuclear Industry

  • EJ/T 1231.1-2008 Test method for analysis of impurity in diuranate.Part1: Determination of silicon dioxide by silicomolybdemu blue spectrophotometry

国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 41153-2021 Determination of boron,aluminum and nitrogen impurity content in silicon carbide single crystal―Secondary ion mass spectrometry
  • GB/T 12690.7-2021 Chemical analysis methods for non-rare earth impurities of rare earth metals and their oxides—Part 7: Determination of silicon content

Professional Standard - Non-ferrous Metal

  • YS/T 987-2014 Test method for measuring carbon containing compound in chlorosilane—Determination of methyldichlorosilane
  • YS/T 1600-2023 Determination of trace impurity elements in silicon carbide single crystal —Glow discharge mass spectrometry

Professional Standard - Machinery

  • JB/T 10891-2008 Special products of silicon carbide—Silicon nitride bonded silicon carbide—Beam
  • JB/T 10645-2006 Special products of silicon carbide-Silicon nitride bonded silicon carbide-Nozzle tubes
  • JB/T 10376-2002 Special products of silicon carbide Slab of silicon dioxide bonded silicon carbide
  • JB/T 10152-2010 Special products of silicon carbide-Silicon nitride bonded silicon carbide-Plate
  • JB/T 10152-2000 Special products of silicon carbide - Slab of silicon nitride bonded silicon carbide
  • JB/T 10152-2023 Silicon carbide special products silicon nitride bonded silicon carbide plate
  • JB/T 10376-2013 Special Products of Silicon Carbide - Slab of Silicon Dioxide Bonded Silicon Carbide

工业和信息化部

RU-GOST R

  • GOST 26239.4-1984 Dichlorsilane. Methods of inpurities determination
  • GOST 10671.1-1974 Reagents. Method for determination of silica impurity
  • GOST 10671.1-2016 Reagents. Method for determination of silica impurity
  • GOST 26239.5-1984 Semiconductor silicon and quartz. Method of impurities determination
  • GOST R 56857-2016 Copper and complex ores, and products of their processing. Methods of measurement of silicon dioxide weight fraction
  • GOST 20841.1-1975 Silicon organic products. Methods for determination of appearance and mechanical impurities

SCC

  • AWWA JAW21575 Journal AWWA — The Treatability of Manganese by Sodium Silicate and Chlorine
  • CEI EN 60276:1997 Definitions and Nomenclature for Carbon Brushes, Brush Holders, Commutators, and Slip Rings

GSO

  • GSO ISO 14237:2013 Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials

Korean Agency for Technology and Standards (KATS)

  • KS D ISO 14706-2003(2018) Surface chemical analysis - Measurement of surface element impurities on silicon wafers by total reflection X-ray fluorescence spectrometer
  • KS M ISO 1689-2017(2022) Sodium and potassium silicates for industrial use — Calculation of the ratio: silicon dioxide/sodium oxide or silicon dioxide/potassium oxide
  • KS M ISO 1689-2022 Sodium and potassium silicates for industrial use — Calculation of the ratio: silicon dioxide/sodium oxide or silicon dioxide/potassium oxide

KR-KS

  • KS D ISO 14706-2003(2023) Surface chemical analysis - Measurement of surface element impurities on silicon wafers by total reflection X-ray fluorescence spectrometer

International Organization for Standardization (ISO)

  • ISO 1689:1976 Sodium and potassium silicates for industrial use; Calculation of the ratio : silicon dioxide/sodium oxide or silicon dioxide/potassium oxide
  • ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials

CZ-CSN

British Standards Institution (BSI)

  • BS ISO 14237:2010 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials