GB/T 14847-2010 in English

SUPERSEDED

Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance

Issued on:2011-01-10
Implemented on:2011-10-01
File Format:PDF
Delivery:Via email within 1~3 business days

Price(USD)： $180.00
$175.00

Standard No:	GB/T 14847-2010
Document status:	SUPERSEDED
Superseded by:	GB/T 14847-2025 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates—Infrared reflectance method
Superseded on:	2026-05-01
Title in English:	Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Title in Chinese:	重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2011-01-10
Implemented on:	2011-10-01
Superseding:	GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	GB-National Standard
Related Keywords:	epitaxial layers p-type epitaxial layers epitaxial layer infrared reflectance measurement method doped substrate
Related Topics:	Substrate Infrared reflection Silica silicon infrared Measuring Infrared Reflectance Infrared measurement reflectance Infrared is Infrared+is TGA-IR Infrared reflection Infrared Thickness Gauge Silica silicon infrared doping Silica Peak Infrared Infrared Thickness Gauge Mid-infrared reflectance Infrared is Infrared wavelength measurement method Reflection measurement method Silica + infrared What does infrared reflectance measure? Infrared a Silicon oxide silicon infrared peak Infrared + reflective Infrared reflective infrared How about infrared reflectivity reflectance infrared Impurity external standard method TGA IR+ chemical doping Siloxane Infrared Infrared peaks of silicon oxide random doping is infrared beam reflection Silicon doped infrared Infrared peaks of silicon TGA+IR+ Gold Infrared Reflectance Coefficient Far Infrared Reflectance Measurement Silicon infrared peak miscellaneous Measurement of Infrared Reflectance Infrared + reflection Reflection Infrared Instrument Infrared silica peak Infrared Silica Mid-infrared reflectance reflectance infrared is infrared Heavy Infrared Infrared Silica Infrared Thickness Gauge no infrared no infrared Hybrid silicon Hybrid silicon SiO infrared peak Infrared measuring weight instrument Electronic doping no infrared+ Doping concentration test doped electrons Mid-infrared reflectance measurement Silicon oxide silicon infrared peak What is infrared reflectivity used for? Measuring Infrared Intensity Infrared reflection temperature Infrared reverse peak Infrared reflection Thickness of infrared reflection Infrared reflective strip Infrared reflective strip Reflectance mid-infrared fiber doping interface doping fiber doping Silicon oxide silicon infrared peak Far Infrared Reflective Material Silicon infrared peak reflect infrared epitaxy Inorganic silicon infrared layer thickness Infrared reverse peak multiple internal reflection infrared External standard impurity Infrared measurement reflectance Content of doping elements Infrared intensity method External and Internal Reflection Infrared External Reflection Infrared Infrared of Inorganic Silicon reflect infrared as infrared Infrared measurement Infrared reflectance measurement method UV-IR reflection Oxygen doping method UV test miscellaneous peak Infrared reflectance measurement heavily doped silicon substrate Silicon + infrared peak Infrared reflective strip Infrared reflectance measurement reflective far infrared material Infrared reflectometer Infrared measurement How to reflect infrared Infrared reflectometer Oxygen doping Infrared a as infrared Blending method infrared reconnection reflective infrared reflective infrared Before doping Infrared determination of silicon doped silicon Infrared Reflectance Coefficient of Gold internal reflection infrared Far Infrared Reflectance Spectrum Glycosides Heavy Infrared System GBT14847 GB/T 14847-1993 GB/T 14847-2010 heavily doped Red and yellow epitaxial wafer XRD determines doping amount Infrared. Many impurity peaks ECV doping concentration test made in China Infrared fairing thickness test Silicon epitaxial thickness testing method Silicon carbide substrate thickness Infrared liquid loading method Infrared reflection test Infrared reflectance quantitative analysis method Infrared Plane Metrics Measurement Method

《GB/T 14847-2010重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，TC203SC2（全国半导体设备和材料标准化技术委员会材料分会）执行，主管部门为国家标准化管理委员会。

Scope

This standard specifies the infrared reflectance measurement method for the thickness of the lightly doped silicon epitaxial layer on the heavily doped substrate. This standard applies to the measurement of the thickness of n-type and p-type silicon epitaxial layers whose resistivity of the substrate is less than 0.02Ω·cm at 23°C and the resistivity of the epitaxial layer is greater than 0.1Ω·cm at 23°C and the thickness of the epitaxial layer is greater than 2μm; In terms of accuracy, this method is also suitable for testing the thickness of n-type and p-type epitaxial layers between 0.5 μm and 2 μm in principle.

More samples: DL/T 5154-2012 JGJ 94-2008 GB 50021-2001(2009)

Sample only — not a preview of GB/T 14847-2010

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