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atomic concentration chemical analysis-secondary-ion mass spectrometry-determination uniform boron secondary ion mass spectrometry method single crystal silicon rectangular cross-section flue butterfly valves infectious anemia antibody levels efficient material handling
GB/T 20176-2006 in English

GB/T 20176-2006 in English

SUPERSEDED

Surface chemical analysis-Secondary-ion mass spectrometry-Determination of boron atomic concentration in silicon using uniformly doped materials

  • Issued on:2006-03-27
  • Implemented on:2006-11-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $220.00
$214.00
Standard No: GB/T 20176-2006
Document status: SUPERSEDED
Superseded by: GB/T 20176-2025 Surface chemical analysis—Secondary-ion mass spectrometry—Determination of boron atomic concentration in silicon using uniformly doped materials
Superseded on: 2026-01-01
Title in English: Surface chemical analysis-Secondary-ion mass spectrometry-Determination of boron atomic concentration in silicon using uniformly doped materials
Title in Chinese: 表面化学分析 二次离子质谱 用均匀掺杂物质测定硅中硼的原子浓度
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2006-03-27
Implemented on: 2006-11-01
ICS Classification: 71.040.40-Chemical analysis
Chinese Classification: N33-Electron optics and other physical optics instrument
Professional Classification: GB-National Standard
Related Keywords: atomic concentration
chemical analysis-secondary-ion mass spectrometry-determination
uniform boron
secondary ion mass spectrometry method
single crystal silicon
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gb/t 20176-2006
Junior high school chemical substance separation method table

《GB/T 20176-2006表面化学分析 二次离子质谱 用均匀掺杂物质测定硅中硼的原子浓度》由TC38(全国微束分析标准化技术委员会)归口,TC38SC2(全国微束分析标准化技术委员会表面化学分析分会)执行,主管部门为国家标准化管理委员会。
本标准详细说明了用标定的均匀掺杂物质确定单晶硅中硼的原子浓度的二次离子质谱方法。


Scope

This standard specifies the secondary ion mass spectrometry method for determining the atomic concentration of boron in single crystal silicon using a calibrated homogeneous dopant (calibrated with a boron-implanted reference substance). It is suitable for uniform boron doping concentration ranging from 1×1016atoms/cm3 to 1×1020atoms/cm3.

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