GB/T 20176-2006 in English
SUPERSEDEDSurface chemical analysis-Secondary-ion mass spectrometry-Determination of boron atomic concentration in silicon using uniformly doped materials
- Issued on:2006-03-27
- Implemented on:2006-11-01
- File Format:PDF
- Delivery:Via email within 1~3 business days
Price(USD):
$220.00
$214.00
$214.00
《GB/T 20176-2006表面化学分析 二次离子质谱 用均匀掺杂物质测定硅中硼的原子浓度》由TC38(全国微束分析标准化技术委员会)归口,TC38SC2(全国微束分析标准化技术委员会表面化学分析分会)执行,主管部门为国家标准化管理委员会。
本标准详细说明了用标定的均匀掺杂物质确定单晶硅中硼的原子浓度的二次离子质谱方法。
Scope
This standard specifies the secondary ion mass spectrometry method for determining the atomic concentration of boron in single crystal silicon using a calibrated homogeneous dopant (calibrated with a boron-implanted reference substance). It is suitable for uniform boron doping concentration ranging from 1×1016atoms/cm3 to 1×1020atoms/cm3.
Sample only — not a preview of GB/T 20176-2006

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