ion mass spectrometry
ion mass spectrometry, Total:15 items.
The international standard classification for "ion mass spectrometry" includes: Chemical analysis , Testing of metals , Semiconducting materials .
The Chinese standard classification for "ion mass spectrometry" includes: Basic standards and general methods , Semimetal and semiconductor material analysis method , Semimetal and semiconductor material in general , Electron optics and other physical optics instrument , Elemental semiconductor material .
国家市场监督管理总局、中国国家标准化管理委员会
- GB/T 40109-2021 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
- GB/T 41153-2021 Determination of boron,aluminum and nitrogen impurity content in silicon carbide single crystal―Secondary ion mass spectrometry
- GB/T 39144-2020 Test method for magnesium content in gallium nitride materials—Secondary ion mass spectrometry
- GB/T 40129-2021 Surface chemical analysis—Secondary ion mass spectrometry—Calibration of the mass scale for a time-of-flight secondary ion mass spectrometer
Professional Standard - Electron
- SJ/T 11493-2015 Test method for measuring nitrogen concentration in silicon substrates by secondary ion mass spectrometry
General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China
- GB/T 42263-2022 Determination of nitrogen content in silicon single crystal—Secondary ion mass spectrometry method
- GB/T 22572-2008 Surface chemical analysis - Secondary-ion mass spectrometry - Method for estimating depth resolution parameters with multiple delta-layer reference materials
- GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
- GB/T 24575-2009 Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry
- GB/T 42274-2022 Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials—Secondary ion mass spectrometry
- GB/T 29851-2013 Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
- GB/T 20176-2006 Surface chemical analysis-Secondary-ion mass spectrometry-Determination of boron atomic concentration in silicon using uniformly doped materials
- GB/T 25186-2010 Surface chemical analysis—Secondary-ion mass spectrometry—Determination of relative sensitivity factors from ion-implanted reference materials
Group Standards of the People's Republic of China
- T/CASAS 010-2019 Determination of Trace Impurities Concentration and Distribution in GaN Materials by Secondary Ion Mass Spectrometry
- T/CASAS 009-2019 Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry
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