GB/T 24580-2009 in English

VALID

Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

Issued on:2009-10-30
Implemented on:2010-06-01
File Format:PDF
Delivery:Via email within 1~3 business days

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Standard No:	GB/T 24580-2009
Document status:	VALID
Title in English:	Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
Title in Chinese:	重掺n型硅衬底中硼沾污的二次离子质谱检测方法
Language:	English
File Format:	Electronic (PDF)
Delivery:	Via email within 1~3 business days
Issued on:	2009-10-30
Implemented on:	2010-06-01
ICS Classification:	29.045-Semiconducting materials
Chinese Classification:	H80-Semimetal and semiconductor material in general
Professional Classification:	GB-National Standard
Related Keywords:	secondary ion mass spectrometry test method secondary ion mass spectrometry secondary ion mass spectrometry scope1.1 n-type silicon substrates boron contamination
Related Topics:	Handheld Small Ion Trap Mass Spectrometer Premium Used Ion Chromatography secondary ion mass spectrometry secondary ion chromatography Premium Used Ion Chromatography Mass Spectrometry mass spectrometry method Mass spectrometry method Substrate ion mass spectrometry ion mass spectrometry Mass spectrometry test method mass spectrometry method Precursor ion peak in mass spectrum mass spectrometry Spectrum detection standard Cerium ion detection method Two Methods of Secondary Ion Chromatography Selection of Precursor Ion Peaks in MS/MS Spectrometry Method for detecting product ions Mass Spectrometry Cerium ion detection method Secondary Ion Spectroscopy Ion Trap MS/MS Secondary Ion Mass Spectrometry Operation Mass spectrometry method Mass Spec + Methods ion pairs in mass spectrometry Are there many X-type ions in the secondary mass spectrometer? gbt 24580 2009 Secondary Mass Spectrometry Product Ions spectrum detection Precursor ions for mass spectrometry Ion detection method boron detection method n-type silicon Precursor Ions in Mass Spectrometry Boron Mass Spectrometry Mass Spectrometry Ion Detection boron ion mass GB/T24580-2009 Mass spectrometry test method boron detection method Secondary ion mass spectrometry+ Mass spectrometric detection of transitions Mass Spectrometry Method Standards Secondary ion mass spectrometry method ion spectrum secondary deionization Ion source for mass spectrometry Measurement Method of Oxygen Concentration in Heavily Doped Silicon Substrate by Secondary Ion Mass Spectrometry Small Secondary Ion Mass Spectrometer Detection by MS/MS Secondary Ionization Mass Spectrometry Ionization methods in mass spectrometry mass spectrometry boron detection method Measurement Method of Nitrogen Concentration in Silicon Substrate by Secondary Ion Mass Spectrometry stained Secondary Electron Detector How to prepare samples for secondary ion mass spectrometry Ions in a mass spectrum Major ions in mass spectrometry Ionization methods in mass spectrometry Secondary Electron Mass Spectrometry tof mass spectrum power MS double ion peak Detecting Transitions in Mass Spectrometry deionized secondary water Mass ion Secondary electrons are used to detect deionized water or secondary ion mass spectrometry Ionization Methods in Mass Spectrometry Ions in mass detection Silicon ion detection Ion peaks in a mass spectrum Secondary Electron Mass Spectrometry secondary carrier MS ion range spectrum detection Secondary Electron Spectrum liquid secondary mass spectrometry New Mass Spectrometer Detector Mass Spec + Testing + Methods secondary ion mass spectrometry ion detection mass spectrometry Determination of Boron Ions in Water boron spectrum silicon substrate Mass spectrometry standard method Small Mass Spectrometer Precursor ion peaks in mass spectra Secondary Electron Mass Spectrometry There are many ions in the first mass spectrometry, but few ions in the second mass spectrometry Two to the 10,000,000th power Ion detection method Two to the 100,000,000th power mass spectrum n sub-mass detection Two to the 1,000,000th power Mass spectrometry detects ions Cadmium ion detection method ionization Ion source in mass spectrometry Major Ions in Mass Spectrometry Mass Spectrometry Ion Detection Secondary ion mass spectrometry mode Zinc ion detection method Mass Spec + Ion Pair Method Zinc ion detection method silicon substrate GB 24580 gb+24580 Secondary ion mass spectrometric detection of boron contamination in heavily doped n-type silicon substrates n Mass Spectrometry secondary particle mass spectrometry secondary ion spectrum Detection method of silicon in water boron ion mass Secondary ion mass spectrometry detection secondary neutron Mass spectrometry detection method Two to the 50,000th power Two to the 5,000,000th power Mass ion Secondary Ion Definition Ionization method of MS/MS Silicon substrate n ion+mass spec+ Two to the 500,000,000th power Secondary ion mass spectrometry oxygen Two to the 36,000,000,000th power Secondary ion mass spectrometry b secondary ions boron detection method GBT24580 GB/T 24580-2009 Disadvantages of secondary ion mass spectrometry Detection of Silica in Water Ion Chromatography Silicon substrate metal ion content Soft ionization method of mass spectrometry Secondary ion mass spectrometry oncology The role of ion detectors in mass spectrometers Secondary mass spectrometry precursor ions What method is used to detect chloride ions in silicon nitride powder? Secondary ion mass spectrometer test method Mass spectrometry soft ionization method Detection method of aluminum ions Detection methods for eight major ions in water quality secondary The methods of ionization in mass spectrometry include Aluminum ion detection method National standard for sewage boric acid detection method Detection method of cesium oxide ions in feces Endoplasmic reticulum calcium ion detection method How to detect boron in water Method for detecting divalent manganese ions in water Methods to separate overlapping spectra Construction of Proton and Heavy Ion Center Detection method of boron in water quality Testing method for chloride ion content of admixtures Primary column debugging method for secondary ion mass spectrometer Boron anhydride detection method The most common detection method of ion chromatography

《GB/T 24580-2009重掺n型硅衬底中硼沾污的二次离子质谱检测方法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了重掺n型硅衬底中硼沾污的二次离子质谱测试方法。本标准适用于二次离子质谱法(SIMS)对重掺n型硅衬底单晶体材料中痕量硼沾污(总量)的测试。
1.2 本标准适用于对锑?砷?磷的掺杂浓度<0.2%(1×1020atoms/cm3)的硅材料中硼浓度的检测。
特别适用于硼为非故意掺杂的p 型杂质,且其浓度为痕量水平(<5×1014 atoms/cm3)的硅材料的测试。
本标准适用于检测硼沾污浓度大于SIMS 仪器检测限(根据仪器的型号不同,检测限大约在5×1012atoms/cm3~5×1013atoms/cm3)两倍的硅材料。

Scope

1.1 This standard specifies the secondary ion mass spectrometry test method for boron contamination in heavily doped n-type silicon substrates. This standard applies to secondary ion mass spectrometry (SIMS) testing of trace boron contamination (total amount) in heavily doped n-type silicon substrate single crystal materials. 1.2 This standard applies to the detection of boron concentration in silicon materials with doping concentrations of antimony, arsenic, and phosphorus < 0.2% (l×10 atoms/cm). It is especially suitable for p-type impurities that are not intentionally doped with boron, and its The test of silicon material with a concentration of trace level (<5×10 atoms/cm). 1.3 This standard is applicable to the detection of masonry contamination concentration greater than the detection limit of the SIMS instrument (depending on the model of the instrument, the detection limit is about 5×10 atoms /cm～5×10atoms/cm) twice that of silicon material. 1.4 In principle, this standard is applicable to samples with different surface conditions, but the estimated accuracy value in this standard is obtained from the test data of surface polished samples.

More samples: NB/T 47013.2-2015 DL/T 5154-2012 GB 18306-2015

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