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secondary ion mass spectrometry detection method secondary ion mass spectrometry secondary ion mass spectrometry scope1.1 test method surface sodium ship cables membrane process sodium hydroxide scopethis standard silver catalysts potentiometric titration method scopethis document
GB/T 24575-2009 in English

GB/T 24575-2009 in English

VALID

Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry

  • Issued on:2009-10-30
  • Implemented on:2010-06-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $180.00
$175.00
Standard No: GB/T 24575-2009
Document status: VALID
Title in English: Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry
Title in Chinese: 硅和外延片表面Na、Al、K和Fe的二次离子质谱检测方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2009-10-30
Implemented on: 2010-06-01
Professional Classification: GB-National Standard
Related Keywords: secondary ion mass spectrometry detection method
secondary ion mass spectrometry
secondary ion mass spectrometry scope1.1
test method
surface sodium
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Secondary ion mass spectrometry+
Mass spectrometric detection of transitions
The mass spectrometer has a molecular weight of more than 37
Secondary ion mass spectrometry method
na ion method
detect na ions
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Detection by MS/MS
Al detection in water
mass spectrometry secondary fragmentation
test na
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na+ detection method
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gb/t 24575

《GB/T 24575-2009硅和外延片表面Na、Al、K和Fe的二次离子质谱检测方法》由TC203(全国半导体设备和材料标准化技术委员会)归口,主管部门为国家标准化管理委员会。
本标准规定了硅和外延片表面Na、Al、K 和Fe的二次离子质谱检测方法。本标准适用于用二次离子质谱法(SIMS)检测镜面抛光单晶硅片和外延片表面的Na、Al、K 和Fe每种金属总量。本标准测试的是每种金属的总量,因此该方法与各金属的化学和电学特性无关。
本标准适用于所有掺杂种类和掺杂浓度的硅片。
本标准特别适用于位于晶片表面约5nm 深度内的表面金属沾污的测试。
本标准适用于面密度范围在(109~1014)atoms/cm2 的Na、Al、K 和Fe的测试。本方法的检测限取决于空白值或计数率极限,因仪器的不同而不同。


Scope

1.1 This standard specifies the secondary ion mass spectrometry detection method for Na, Al, K and Fe on the surface of silicon and epitaxial wafers. This standard applies to the detection of Na, Al, K and Fe on the surface of mirror-polished single crystal silicon wafers and epitaxial wafers by secondary ion mass spectrometry (SIMS). This standard tests the total amount of each metal, so the method is independent of the chemical and electrical properties of the individual metals. 1.2 This standard applies to silicon wafers of all doping types and doping concentrations. 1.3 This standard is especially applicable to the test of surface metal contamination within a depth of about 5 nm on the wafer surface. 1.4 This standard is applicable to the testing of Na, Al, K and Fe whose surface density ranges from (10 to 10 atoms/cm). The detection limit of this method depends on the blank value or counting rate limit, which varies with different instruments. 1.5 This standard The test method is a supplement to the following test methods: 1.5.1 Total reflection X-ray fluorescence spectrometer (TXRF), which can detect metals with high atomic number Z on the surface, such as Fe, but there is no enough low-level for Na, Al, and K Detection limit (). 1.5.2 Carry out vapor phase decomposition (VPD) to the metal on the surface, then use atomic absorption spectrometer (AAS) or inductively coupled plasma mass spectrometer (ICP-MS) to test the product after decomposition, the detection limit of metal It is (10-10 ) atoms/cm. However, this method cannot provide spatial distribution information, and the gas phase decomposition and pre-concentration of metals are related to the chemical characteristics of each metal.

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