semiconductor oxidation

semiconductor oxidation, Total:122 items.

The international standard classification for "semiconductor oxidation" includes: Electronic components in general .

The Chinese standard classification for "semiconductor oxidation" includes: Technical management , Technical Management , Sensitive component and sensor .

Group Standards of the People's Republic of China

T/CASAS 015-2022 Power cycling test method for silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）
T/CECA 35-2019 Metal oxide semiconductor gas sensor
T/QGCML 743-2023 Specifications for anodizing process of semiconductor equipment parts
T/CASAS 006-2020 The general specification for silicon carbide metal-oxide-semiconductor field-effect-transistor
T/CASAS 002-2021 Terminology for wide bandgap semiconductors
T/CIECCPA 007-2024 Semiconductor Industry Nitrogen Oxide Emission Requirements
T/CASAS 016-2022 Transient dual test method for the measurement of the thermal resistance junction to case of silicon carbide metal-oxide-semiconductor field-effect-transistor（SiC MOSFET）

Professional Standard - Electron

SJ 20026-1992 Measuring methods for gas sensors of metal oxide semiconductor
SJ/T 11824-2022 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method
SJ 20079-1992 Test methods for gas sensors of metal-oxide semiconductor
SJ 20025-1992 Generic specification for gas sensors of metal-oxide semiconductor

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 15652-1995 Generic specification for gas sensors of metal-oxide semiconductor
GB/T 15653-1995 Measuring methods for gas sensors of metal-oxide semiconductor

工业和信息化部

SJ/T 9014.8.2-2018 Semiconductor Devices Discrete Devices Part 8-2: Blank Detailed Specification for Superjunction Metal Oxide Semiconductor Field Effect Transistors

Taiwan Provincial Standard of the People's Republic of China

CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage
CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage

European Committee for Electrotechnical Standardization（CENELEC）

EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

Defense Logistics Agency

DLA SMD-5962-96665 REV D-2005 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HEX VOLTAGE LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO- CMOS OPERATION, MONOLITHIC SILICON
DLA SMD-5962-94532-1994 MICROCIRCUIT, CMOS, 64-BIT MICROPROCESSOR
DLA SMD-5962-77044 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, NOR GATES, MONOLITHIC SILICON
DLA SMD-5962-96736-1996 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOS/TTL INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON
DLA SMD-5962-77027 REV C-1982 MICROCIRCUITS, DIGITAL, CMOS, HEX INVERTER, MONOLITHIC SILICON
DLA SMD-5962-77053 REV M-2005 MICROCIRCUIT, CMOS, QUAD ANALOG SWITCH, MONOLITHIC SILICON
DLA SMD-5962-93007 REV D-1996 MICROCIRCUIT, DIGITAL, CMOS, TWO DIMENSIONAL CONVOLVER MONOLITHIC SILICON
DLA SMD-5962-84069 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-77034 REV X-2006 MICROCIRCUIT, LINEAR, ADJUSTABLE VOLTAGE REGULATOR, MONOLITHIC SILICON
DLA SMD-5962-84043 REV E-2005 MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, EXCLUSIVE NOR GATE, MONOLITHIC SILICON
DLA SMD-5962-77037 REV G-2005 MICROCIRCUIT, DIGITAL, CMOS, 4-BIT MAGNITUDE COMPARATOR, MONOLITHIC SILICON
DLA SMD-5962-87686 REV D-1999 MICROCIRCUIT, DIGITAL, CMOS, 16 X 16 MULTIPLIER, MONOLITHIC SILICON
DLA SMD-5962-78029 REV H-2005 MICROCIRCUIT, DIGITAL, CMOS, ENCODER- DECODER, MONOLITHIC SILICON
DLA SMD-5962-77023 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL BINARY UP-COUNTER, MONOLITHIC SILICON
DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS, DIGITAL, CMOS, QUAD D LATCH, MONOLITHIC SILICON
DLA SMD-5962-94533-1994 MICROCIRCUIT, DIGITAL, CMOS, 32-BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-79013 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, BUFFERED TRIPLE 3-INPUT NAND GATE, MONOLITHIC SILICON
DLA SMD-5962-89877 REV C-2004 MICROCIRCUIT, LINEAR, CMOS, DUAL, RS232, TRANSCEIVER, MONOLITHIC SILICON
DLA SMD-5962-93228 REV B-2005 MICROCIRCUIT, DIGITAL, CMOS, TEST BUS CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-77036 REV D-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-89725 REV A-1995 MIRCOCIRCUIT, DIGITAL, CMOS, ASYNCHRONOUS, SERIAL CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-89982 REV B-2004 MICROCIRCUIT, DIGITAL, CHMOS, 16-BIT MICROCONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-92331-1993 MICROCIRCUIT, DIGITAL, CMOS, COORDINATE TRANSFORMER, 16X16 BIT, MONOLITHIC SILICON
DLA SMD-5962-77051 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-77060 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT OR GATE, MONOLITHIC SILICON
DLA SMD-5962-79012 REV A-1986 MICROCIRCUITS, DIGITAL, CMOS, STATIC SHIFT REGISTER, MONOLITHIC SILICON
DLA SMD-5962-89711 REV B-2006 MICROCIRCUIT, DIGITAL, CMOS 64-BIT OUTPUT CORRELATOR, MONOLITHIC SILICON
DLA SMD-5962-94642-1994 MICROCIRCUIT, DIGITAL, CMOS, ENHANCED MULTI-FUNCTIONAL PERIPHERAL, MONOLITHIC SILICON
DLA SMD-5962-90526 REV M-2004 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-90657 REV A-2006 MICROCIRCUIT, DIGITAL, CMOS, UNIVERSAL SERIAL CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-90678 REV A-2005 MICROCIRCUIT, DIGITAL, CMOS, 16-BIT, MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-77024 REV F-2005 MICROCIRCUIT, DIGITAL, CMOS, QUAD 2-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-06208-2006 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-84068 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, CLOCK GENERATOR DRIVER, MONOLITHIC SILICON
DLA SMD-5962-89638-1989 MICROCIRCUIT, LINEAR, CMOS CURRENT MODE CONTROLLER, MONOLITHIC SILICON
DLA SMD-5962-93006 REV B-1999 MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-93183 REV C-2002 MICROCIRCUIT, LINEAR, BUS TRANSCEIVER, DIFFERENTIAL, MONOLITHIC SILICON
DLA SMD-5962-84052 REV D-1990 MICROCIRCUITS, DIGITAL, CMOS, 16 BIT MICROPROCESSOR, MONOLITHIC SILICON
DLA SMD-5962-77059 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, DUAL 4-INPUT AND GATE, MONOLITHIC SILICON
DLA SMD-5962-79014 REV B-1987 MICROCIRCUIT, DIGITAL, CMOS, HEX INVERTER BUFFER, MONOLITHIC SILICON
DLA SMD-5962-84065 REV E-2005 MICROCIRCUIT, DIGITAL, CMOS, PROGRAMMABLE INTERVAL TIMER, MONOLITHIC SILICON
DLA SMD-5962-90640 REV C-2003 MICROCIRCUIT, DIGITAL, CMOS, QUAD BILATERAL SWITCH, MONOLITHIC SILICON

British Standards Institution (BSI)

BS EN 62416:2010 Semiconductor devices - Hot carrier test on MOS transistors
BS IEC 60747-8-4:2004 Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
BS IEC 62373-1:2020 Semiconductor devices. Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Fast BTI test for MOSFET
PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability
BS EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BS EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
BS 3839:1978 Specification for oxygen-free high-conductivity copper for electronic tubes and semiconductor devices

Association Francaise de Normalisation

NF C80-203*NF EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs).
NF EN 62417:2010 Semiconductor Devices – Mobile Ion Testing for Metal Oxide Field Effect Semiconductor Transistors (MOSFETs)
NF C96-051*NF EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
NF EN 62373:2006 Bias Temperature Stability Testing for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)

International Electrotechnical Commission (IEC)

IEC 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
IEC 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications
IEC 62373-1:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
IEC 63275-1:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

Danish Standards Foundation

DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Spanish Association for Standardization (UNE)

UNE-EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (Endorsed by AENOR in September of 2010.)
UNE-EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006). (Endorsed by AENOR in November of 2006.)

SCC

DANSK DS/EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
CEI EN 62417:2011 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)
BS 3839:1965 Oxygen free high conductivity copper for electronic tubes and semiconductor devices
BS PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
CEI EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
DANSK DS/EN 62373:2006 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

German Institute for Standardization

DIN EN 62417:2010-12 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 62417:2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010); German version EN 62417:2010
DIN EN 62373:2007 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
DIN EN 62373:2007-01 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006

Lithuanian Standards Office

LST EN 62417-2010 Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs) (IEC 62417:2010)

U.S. Military Regulations and Norms

ARMY MIL-M-63530 (1)-1987 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-63530-1981 MICROCIRCUIT, DIGITAL, CMOS (LOGIC)
ARMY MIL-M-48646 NOTICE 1-1997 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
ARMY MIL-M-48646-1986 MICROCIRCUIT, DIGITAL, SCO/DLA MULTICHIP CMOS
ARMY MIL-M-63320 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63321 A NOTICE 1-1997 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-M-63320 A NOTICE 1-1997 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63320 A-1981 MICROCIRCUIT, DIGITAL, CMOS (INITIAL LOGIC)
ARMY MIL-M-63321 A-1981 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-I-48632-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-I-48634 (3)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48634 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48632 NOTICE 1-1996 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-I-48634-1986 INTEGRATED CIRCUIT, DIGITAL, CMOS LOGIC ARRAY MONOLITHIC SILICON
ARMY MIL-I-48632 (2)-1993 INTEGRATED CIRCUIT, DIGITAL, CMOS CONTROL AND TIMING BASE, MONOLITHIC, SILICON
ARMY MIL-M-63321 A (4)-1990 MICROCIRCUIT, DIGITAL, CMOS (FINAL LOGIC)
ARMY MIL-M-63324 A VALID NOTICE 1-1988 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A NOTICE 2-1997 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A-1981 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE
ARMY MIL-M-63324 A (1)-1982 MICROCIRCUIT, DIGITAL, CMOS, SPECIAL PURPOSE NOR GATE

RU-GOST R

GOST 26239.7-1984 Semiconductor silicon. Method of oxygen, carbon and nitrogen determination

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE 641-1987 STANDARD DEFINITIONS AND CHARACTERIZATION OF METAL NITRIDE OXIDE SEMICONDUCTOR ARRAYS

Institute of Electrical and Electronics Engineers (IEEE)

ANSI/IEEE Std 641-1987 IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

Standard Association of Australia （SAA）

AS C379.1:1970 Mechanical standardization of semiconductor devices - Preparation of drawings of semiconductor devices

PH-BPS

PNS IEC 62373-1:2021 Semiconductor devices - Bias-temperature stability test for metal-ox ide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC - International Electrotechnical Commission

IEC TR 63133:2017 Semiconductor devices - Scan based ageing level estimation for semiconductor devices (Edition 1.0)

GSO

OS GSO IEC 62373:2014 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
GSO IEC 62373:2014 Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)
GSO IEC 63275-1:2024 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

CZ-CSN

CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices