GB/T 14145-1993 in English

《GB/T 14145-1993硅外延层堆垛层错密度测定 干涉相衬显微镜法》由TC203（全国半导体设备和材料标准化技术委员会）归口，主管部门为国家标准化管理委员会。
本标准规定了使用干涉相衬显微镜非破坏性测量硅外延层堆垛层错密度的方法。本标准适用于硅外延层厚度不小于3μm、外延层晶向偏离｛111｝晶面或｛100｝晶面角度较小的试样的堆垛层错密度测量。当堆垛层错密度超过15000cm-2或当外延层晶向与｛111｝晶面或｛100｝晶面偏离角度较大时，测量精度将有所降低。

Scope

This standard specifies the method for the non-destructive measurement of the stacking fault density of silicon epitaxial layers using an interference phase contrast microscope. This standard is applicable to the measurement of the stacking fault density of samples whose silicon epitaxial layer thickness is not less than 3 μm, and the crystal orientation of the epitaxial layer deviates from the {111} crystal plane or the {100} crystal plane with a small angle. When the stacking fault density exceeds 15000cm^-2 or when the crystal orientation of the epitaxial layer deviates from the {111} crystal plane or {100} crystal plane, the measurement accuracy will be reduced.