multiple emitter transistor

multiple emitter transistor, Total:173 items.

The international standard classification for "multiple emitter transistor" includes: Sugar. Sugar products. Starch , Testing of metals , Physics. Chemistry , Optics and optical measurements , Other standards related to optics and optical measurements , Ophthalmic equipment .

The Chinese standard classification for "multiple emitter transistor" includes: Mass spectrometer, liquid spectrometer, energy spectrometer and combined devices of them , Processed sugar , Sugar refining , Metal physical property test method , Artificial lens , X ray, magnetic powder, fluorescent light and other defectoscope , Medical optical instrument and endoscope .

Professional Standard - Education

JY/T 009-1996 General rules for X-ray polycrystalline diffractometry
JY/T 0587-2020 General rules for X-ray polycrystalline diffractometry

Group Standards of the People's Republic of China

T/QGCML 1655-2023 Thin film transistor LCD
T/CNIA 0064-2020 Determination of impurity content in dust-free wipes for the polysilicon industry - Inductively coupled plasma atomic emission spectrometry
T/CECA 72-2022 Gyromagnetic polycrystalline ferrite materials
T/ZZB 0514-2018 Optical Reflector Film for TFT-LCD Panel Display
T/ZZB 0916-2018 Gyromagnetic polycrystalline ferrite
T/SAS 0003-2018 Bismuth germanate scintillation crystals for positron emission tomography

Professional Standard - Light Industry

QB/T 1174-2002 Multicrystal rock sugar
QB/T 1174-1991 Multicrystal rock sugar

轻工业部

QB 1174-1991 Multicrystal Rock Sugar

National Metrological Verification Regulations of the People's Republic of China

JJG 629-1989 Polycrystalline X-ray Diffractometer
JJG(地质) 1014-1990 Verification Regulations for Polycrystalline X-ray Diffractometer
JJG 629-2014 Polycrystalline X-Ray Diffractometers
JJG(电子) 15003-1988 3280 type radio frequency crystal marker signal generator trial verification regulations

Gansu Provincial Standard of the People's Republic of China

DB62/T 2760-2017 Determination of multi-element content in cryolite by inductively coupled plasma atomic emission spectrometry

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 42676-2023 Test method for crystalline quality of semiconductive single crystal―X-ray diffraction method

Taiwan Provincial Standard of the People's Republic of China

CNS 8105-1981 Test Method for Transistor Collector - Emitter Saturation Voltage
CNS 6808-1989 General Rules for Transistors
CNS 13809-1997 Light Emitting Diode Dice

国家市场监督管理总局、中国国家标准化管理委员会

GB/T 39865-2021 Method for measuring refractive index of uniaxial optical crystals
GB/T 39867-2021 Bismuth germanate scintillation crystal for positron emission tomography

Professional Standard - Machinery

JB/T 5482-2011 X-ray Orientation apparatus

Inner Mongolia Provincial Standard of the People's Republic of China

DB15/T 1239-2017 Determination of impurity content in activated carbon for hydrogen purification in the production of polysilicon by inductively coupled plasma emission spectrometry

Professional Standard - Medicine

YY 0290.9-2010 Ophthalmic implants—Intraocular lenses—Part 9:Multifocal intraocular lenses

PL-PKN

PN T01504-02-1987 Transistors Measuring methods Collector-emitter saturation voltage ?/C?-sat and base-emitter saturation voltage UBEat
PN T01504-05-1987 Transistors Measuring methods Collector-base and emitter-base cut-off currents ICB0 and /?B0
PN T01504-01-1987 Transistors Measuring methods Static value of the forward current transfer ratio hus and base-emitter voltage Ube
PN T01504-10-1987 Transistors Measuring tnethod Collector-emitter sustaining voltage UcEO(sm) and Uceiusus)
PN T01504-22-1987 Transistors Measuring methods Collector-base and emitter-base capacitances Ccbo and Cebo
PN-EN 55032-2015-09/A1-2021-05 E Electromagnetic compatibility of multimedia equipment -- Emission requirements
PN T01504 ArkusZ03-1974 Transistort Measuremen? ?/(BR)U0, U(B?)CES, U(8BCH, L/(BU)UX

RU-GOST R

GOST 18604.6-1974 Transistors. Method for measuring emitter reverse current
GOST 18604.5-1974 Transistors. Method for measuring collector-emitter reverse current
GOST 18604.3-1980 Transistors bipolar. Methods for measuring collector and emitter capacitances
GOST 18604.22-1978 Transistors bipolar. Methods for measuring collector-emitter and base-emitter saturation voltage

CZ-CSN

CSN 35 8757 Cast.8-1985 Transistors. Measuring methods of base-emitor voltage
CSN 35 8741-1964 Transistore. Measurement of colleotor emitter residual voltage
CSN 35 8757 Cast.5-1985 Transistors. Method of measuring collector and emitter barrier layer capacltance
CSN 35 8757 Cast.12-1989 Blpolar transistors. Impuls measuring method of break-down voltage collector-emltter
CSN 35 8757 Cast.1-1985 Transistors. Measuring method of collector-base and emitterbase breakdown voltage
CSN 35 8757 Cast.4-1985 Transistors. Methods of measuring collector cut-off current, emitter cut-off current and collector-emitter cut-off current
CSN 35 8757 Cast.2-1985 Transistors. Measuring method of common-emitter small-signal short-circuit forward current transfer ratio
CSN 35 8753-1970 Transistors. Method of measuring short circuit input admittance in the common emitter configuration at higher frequencies

Defense Logistics Agency

DLA SMD-5962-92075 REV B-2006 MICROCIRCUIT, DIGITAL, ECL, 68030/40 ECL/TTL CLOCK DRIVER, MONOLITHIC SILICON
DLA SMD-5962-91530 REV A-2006 MICROCIRCUIT, DIGITAL, ECL, HEX TTL-TO-ECL TRANSLATOR, MONOLITHIC SILICON
DLA SMD-5962-91531 REV A-2004 MICROCIRCUIT, DIGITAL, ECL, HEX ECL-TO-TTL TRANSLATOR, MONOLITHIC SILICON
DLA SMD-5962-87508 REV E-2006 MICROCIRCUIT, DIGITAL, ECL-TO-TTL TRANSLATOR, MONOLITHIC SILICON
DLA SMD-5962-87560 REV F-2006 MICROCIRCUIT, DIGITAL, TTL-TO-ECL TRANSLATOR, MONOLITHIC SILICON
DLA SMD-5962-92066 REV A-2004 MICROCIRCUIT, DIGITAL, ECL, OCTAL ECL/TTL, BI-DIRECTIONAL TRANSLATOR WITH REGISTER, MONOLITHIC SILICON
DLA MIL-S-19500/390 VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, Double-Emitter Types 3N74, TX3N74, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127
DLA SMD-5962-85508 REV C-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL, MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-90798-1992 MICROCIRCUITS, DIGITAL, FAST, CMOS, DUAL ODD-PARITY GENERATOR/CHECKERS, TTL COMPATIBLE, MONOLITHIC SILICON
DLA DSCC-DWG-85019 REV E-2008 DELAY LINES, PROGRAMMABLE 16 PIN COMPATIBLE, 3 BIT, TTL COMPATIBLE
DLA SMD-5962-87711 REV A-2001 MICROCIRCUIT, DIGITAL, BIPOLAR, TTL, DUAL MONOSTABLE MULTIVIBRATOR, MONOLITHIC SILICON
DLA SMD-5962-87533 REV B-2001 MICROCIRCUIT, DIGITAL, ADVANCED LOW POWER SCHOTTKY TTL, UNIVERSAL MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-86869 REV C-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, MULTIPLEXER, MONOLITHIC SILICON
DLA SMD-5962-85097 REV F-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY, TTL, MULTIPLEXERS, MONOLITHIC SILICON
DLA SMD-5962-97562 REV A-2006 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS WITH 3-STATE OUTPUTS, MONOLITHIC SILICON
DLA SMD-5962-85096 REV E-2005 MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, MULTIPLEXER, MONOLITHIC SILICON
DLA MIL-M-38510/314 C VALID NOTICE 1-2008 MICROCIRCUITS, DIGITAL, LOW-POWER SCHOTTKY, TTL, MONOSTABLE MULTIVIBRATORS, MONOLITHIC SILICON
DLA SMD-5962-87656 REV B-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D-TYPE FLIP-FLOP WITH CLEAR, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-85507 REV E-2003 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
DLA SMD-5962-07242-2008 MICROCIRCUIT, DIGITAL, DUAL CHANNEL, BUS TRANSCEIVER, TTL INPUT/OUTPUT, MONOLITHIC SILICON
DLA SMD-5962-90747 REV B-1995 MICROCIRCUIT, DIGITAL, BIPOLAR CMOS, TTL COMPATIBLE, OCTAL D-TYPE EDGE TRIGGERED FLIP-FLOP, MONOLITHIC SILICON
DLA SMD-5962-87627 REV C-2006 MICROCIRCUIT, DIGITAL, FAST CMOS, OCTAL D FLIP-FLOP WITH CLOCK ENABLE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON

SCC

MIL MIL-S-19500/390-1968 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N74, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127
DANSK DS/EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
DANSK DS/EN 120003:2016 Blank Detail Specification: Phototransistors, photodarlington transistors, phototransistor arrays
NS-EN 13925-3:2005 Non destructive testing — X ray diffraction from polycrystalline and amorphous materials — Part 3: Instruments
AENOR UNE-EN 13925-3:2006 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
DANSK DS/EN 55032/A1:2020 Electromagnetic compatibility of multimedia equipment – Emission requirements
NS-EN 13925-2:2003 Non-destructive testing — X-ray diffraction from polycrystalline and amorphous materials — Part 2: Procedures
CEI EN 55032:2015 Electromagnetic compatibility of multimedia equipment - Emission Requirements
DANSK DS/EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
AENOR UNE-EN 55032/A11:2020 Electromagnetic compatibility of multimedia equipment - Emission Requirements
DANSK DS/EN 55032:2015 Electromagnetic compatibility of multimedia equipment – Emission Requirements
DANSK DS/EN 55032/AC:2016 Electromagnetic compatibility of multimedia equipment – Emission Requirements
DANSK DS/EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
AENOR UNE-EN 1330-11:2008 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
NS-EN 1330-11:2007 Non-destructive testing — Terminology — Terms used in X-ray diffraction from polycrystalline and amorphous materials
AENOR UNE-EN 13925-1:2006 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles
NS-EN 13925-1:2003 Non-destructive testing — X-ray diffraction from polycrystalline and amorphous material — Part 1: General principles
MIL MIL-PRF-55310/25D-2009 Oscillator, Crystal Controlled, Type 1 (Crystal Oscillator (XO)), 25 MHZ Through 175 MHZ, Hermetic Seal, Square Wave, Emitter Coupled Logic
DANSK DS/EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles
DIN VDE 0556:1966 Regulations for polycrystal semiconductor-rectifiers
MIL MIL-S-19500/361-1966 TRANSISTOR, PNP, SILICON, DOUBLE-EMITTER TYPE 3N108 (SEE AMENDMENT 1 FOR INACTIVATION NOTICE) (NO S/S DOCUMENT)

Electronic Components, Assemblies and Materials Association

ECA TEP105-12-1987 Test Method for Tube Face Reflectivity

British Standards Institution (BSI)

BS EN 13925-3:2005 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Instruments
BS EN 13925-2:2003(2008) Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Procedures
BS EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Procedures
BS EN 13925-3:2005(2009) Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Instruments
BS EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - General principles
BS EN 13925-1:2003(2008) Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - General principles
BS EN 55032:2012 Electromagnetic compatibility of multimedia equipment. Emission requirements
BS EN 55032:2015 Electromagnetic compatibility of multimedia equipment. Emission Requirements
BS EN 55032:2015+A11:2020 Electromagnetic compatibility of multimedia equipment. Emission Requirements
BS EN IEC 62614-1:2020 Fibre optics. Multimode launch conditions - Launch condition requirements for measuring multimode attenuation

Spanish Association for Standardization (UNE)

UNE-EN 120003:1992 BDS: PHOTOTRANSISTORS, PHOTOCARLINGTON TRANSISTORS, PHOTOTRANSISTOR ARRAYS. (Endorsed by AENOR in September of 1996.)
UNE-EN 13925-3:2006 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
UNE-EN 55032:2016/A11:2020 Electromagnetic compatibility of multimedia equipment - Emission Requirements
UNE-EN 13925-2:2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
UNE-EN 55032:2016 Electromagnetic compatibility of multimedia equipment - Emission Requirements
UNE-EN 55032:2016/AC:2016-07 Electromagnetic compatibility of multimedia equipment - Emission Requirements
UNE-EN 55032:2016/A1:2021 Electromagnetic compatibility of multimedia equipment - Emission requirements
UNE-EN 55032:2013 Electromagnetic compatibility of multimedia equipment - Emission requirements
UNE-EN 13925-1:2006 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles

SE-SIS

SIS SS CECC 20003-1988 Blank detail specification: Phototransistors, photodar/ington transistors, phototransistor arrays

IT-UNI

UNI 6966-1971 Determination of the number of polar patterns in polycrystals by X-ray diffraction

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD25-1972 Measurement of Small-Signal Transistor Scattering Parameters
JEDEC EIA-435-1976 Measurement of Small-Signal Transistor Scattering Parameters

Association Francaise de Normalisation

NF C91-032/A1*NF EN 55032/A1:2020 Electromagnetic compatibility of multimedia equipment - Emission requirements
NF A09-280-3*NF EN 13925-3:2005 Non destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3 : instruments.
NF EN 120003:1992 Special framework specification: phototransistors, photodarlington transistors, phototransistor networks
NF EN 1330-11:2007 Non-destructive testing - Terminology - Part 11: X-ray diffraction of polycrystalline and amorphous materials
NF A09-280-2*NF EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycristalline and amorphous materials - Part 2 : procedures
NF C91-032*NF EN 55032:2015 Electromagnetic compatibility of multimedia equipment - Emission requirements
NF EN 55032/A11:2020 Compatibilité électromagnétique des équipements multimédia - Exigences d'émission
NF C93-120-003*NF EN 120003:1992 Blank detail specification : phototransistors, photodarlington transistors, phototransistor arrays
NF EN 55032:2015 Compatibilité électromagnétique des équipements multimédia - Exigences d'émission
NF EN 55032/A1:2020 Compatibilité électromagnétique des équipements multimédia - Exigences d'émission
NF A09-280-1*NF EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1 : general principles.
NF EN 13925-2:2003 Essais non destructifs - Diffraction des rayons X appliquée aux matériaux polycristallins et amorphes - Partie 2 : procédures

YU-JUS

JUS N.R1.330-1979 ipolar transistors. Definitions of scattering parameters

Danish Standards Foundation

DS/EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
DS/EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
DS/EN 55032:2020 Electromagnetic compatibility of multimedia equipment – Emission requirements
DS/EN 55032:2012 Electromagnetic compatibility of multimedia equipment - Emission requirements
DS/EN 55032/AC:2013 Electromagnetic compatibility of multimedia equipment - Emission requirements
DS/EN 1330-11:2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
DS/EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles

German Institute for Standardization

DIN EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 2: Procedures; German version EN 13925-2:2003
DIN EN 13925-3:2005-07 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments; German version EN 13925-3:2005
DIN EN 13925-1:2003 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 1: General principles; German version EN 13925-1:2003
DIN EN 120003:1996 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
DIN EN 13925-3:2005 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments; German version EN 13925-3:2005
DIN EN 13925-2:2003-07 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 2: Procedures; German version EN 13925-2:2003
DIN EN 120003:1996-11 Blank detail specification - Phototransistors, photodarlington transistors, phototransistor arrays; German version EN 120003:1992
DIN EN 13925-1:2003-07 Non-destructive testing - X-ray diffraction from polycristalline and amorphous material - Part 1: General principles; German version EN 13925-1:2003

European Standard for Electrical and Electronic Components

EN 120003:1992 Blank detail specification: phototransistors, photodarlington transistors, phototransistor arrays

Lithuanian Standards Office

LST EN 13925-2-2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures
LST EN 120003-2001 Blank detail specification. Phototransistors, photodarlington transistors, phototransistor arrays
LST EN 13925-3-2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
LST EN 55032-2012/AC-2013 Electromagnetic compatibility of multimedia equipment - Emission requirements
LST EN 1330-11-2007 Non-destructive testing - Terminology - Terms used in X-ray diffraction from polycrystalline and amorphous materials
LST EN 13925-1-2004 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous material - Part 1: General principles

IX-CISPR

CISPR 32:2015/AMD1:2019 CSV Electromagnetic compatibility of multimedia equipment - Emission requirements
CISPR 32:2015 RLV Electromagnetic compatibility of multimedia equipment – Emission requirements

Australian/New Zealand Standard (AU-AS/NZS)

AS/NZS CISPR 32:2015(R2020) Electromagnetic compatibility emission requirements for multimedia equipment
AS/NZS CISPR 32:2015/AMD 1:2020 Electromagnetic compatibility emission requirements for multimedia equipment
AS/NZS CISPR 32:2015
AS/NZS CISPR 32:2013 Electromagnetic compatibility of multimedia equipment - Emission requirements

VDE - VDE Verlag GmbH@ Berlin@ Germany

VDE 0878-32 BERICHTIGUNG 1-2019 Electromagnetic compatibility of multimedia equipment - Emission requirements; German version EN 55032:2012/AC:2013

Canadian Standards Association (CSA)

CAN/CSA-CISPR 32-2017 Electromagnetic compatibility of multimedia equipment — Emission requirements

European Committee for Electrotechnical Standardization（CENELEC）

EN 55032:2015/A1:2020 Electromagnetic compatibility of multimedia equipment - Emission Requirements
EN 55032:2015 Electromagnetic compatibility of multimedia equipment - Emission Requirements

Korean Agency for Technology and Standards (KATS)

KS C 9832-2019 Electromagnetic compatibility of multimedia equipment —Emission requirements
KS C 7021-1985 GENERAL RULES FOR TRANSISTORS
KS C 7021-1974(2001) GENERAL RULES FOR TRANSISTORS
KS B 3620-2012 Polycrystalline diamond dies for wire drawing

European Committee for Standardization (CEN)

EN 13925-3:2005 Non destructive testing - X ray diffraction from polycrystalline and amorphous materials - Part 3: Instruments
EN 13925-2:2003 Non-destructive testing - X-ray diffraction from polycrystalline and amorphous materials - Part 2: Procedures

International Electrotechnical Commission (IEC)

CISPR 32:2012 Electromagnetic compatibility of multimedia equipment - Emission requirements
CISPR 32-2015+AMD1-2019 CSV Electromagnetic compatibility of multimedia equipment - Emission requirements
CISPR 32:2015 Electromagnetic compatibility of multimedia equipment - Emission requirements
CISPR 32:2015+AMD1:2019 CSV Electromagnetic compatibility of multimedia equipment - Emission requirements

KR-KS

KS C 9832-2024 Electromagnetic compatibility of multimedia equipment — Emission requirements
KS C 9832-2023 Electromagnetic compatibility of multimedia equipment — Emission requirements

International Telecommunication Union (ITU)

ITU-T Q.153-1988 Multifrequency signal sender
ITU-T Q.322-1988 Multifrequency signal sender

American National Standards Institute （ANSI)

ANSI Z80.12-2007(R2017) Ophthalmics - Multifocal Intraocular Lenses

American Society for Testing and Materials (ASTM)

ASTM E2627-10 Standard Practice for Determining Average Grain Size Using Electron Backscatter Diffraction (EBSD) in Fully Recrystallized Polycrystalline Materials

GSO

GSO ISO 11979-9:2014 Ophthalmic implants -- Intraocular lenses -- Part 9: Multifocal intraocular lenses

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