New semiconductor materials and devices

New semiconductor materials and devices, Total:200 items.

The international standard classification for "New semiconductor materials and devices" includes: Mechanical structures for electronic equipment , Testing of metals , Testing of metals in general , Semiconducting materials , Semiconductor devices , Semiconductor devices in general , Transistors .

The Chinese standard classification for "New semiconductor materials and devices" includes: Metal physical property test method , Semimetal and semiconductor material in general , Special electronic technology material , Semiconductor discrete devices in general , Power semiconductor device and parts , Technical management , Technical management .

---

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

• GB/T 14264-2009 Semiconductor materials - Terms and definitions
• GB/T 249-2017 The rule of type designation for discrete semiconductor devices
• GB/T 249-1989 The rule of type designation for discrete semiconductor
• GB/T 20521.2-2025 Semiconductor Devices - Part 14-2: Semiconductor Sensors - Hall Elements
• GB/T 7423.2-1987 Heat sink of semiconductor devices--Heat sink, Extruded shapes
• GB/T 20521.5-2025 Semiconductor Devices - Part 14-5: Semiconductor Sensors - PN Junction Semiconductor Temperature Sensors
• GB 7423.2-1987 sink of semiconductor devices - Heat sink, Extruded shapes
• GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
• GB/T 14264-2024 Terminology of semiconductor materials
• GB/T 14264-1993 Semiconductor materials－Terms and definitions
• GB/T 1550-1997 methods for measuring conductivity type of extrinsic semiconducting materials
• GB/T 31469-2015 Semiconductor materials cutting fluid
• GB/T 20521.4-2025 Semiconductor Devices - Part 14-4: Semiconductor Sensors - Semiconductor Accelerometers
• GB/T 1550-2018 Test methods for conductivity type of extrinsic semiconducting materials
• GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers

Group Standards of the People's Republic of China

• T/SHDSGY 135-2023 New Energy Semiconductor Silicon Wafer Material Technology

Professional Standard - Machinery

• JB 5781-1991 Technical conditions of profile radiators for power semiconductor devices
• JB/T 5781-1991 Sectioned Radiator for Power Semiconductor Devices. Technical Specification
• JB/T 2423-1999 Type designation for power semiconductor device
• JB/T 8175-1999 Outline dimensions of extruded heat sink for power semiconductor devices

Professional Standard - Electron

• SJ/T 10414-2015 Solder for semiconductor device
• SJ/T 10414-1993 Solder for semicoductor device
• SJ 20072-1992 Semiconductor discrete device-Detail specification for semiconductor opto-couplers for Type GH24,GH25 and GH26

Military Standard of the People's Republic of China-General Armament Department

• GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
• GJB/Z 10-1989 Semiconductor discrete device series type spectrum
• GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
• GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode
• GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor

Shaanxi Provincial Standard of the People's Republic of China

• DB61/T 1250-2019 General Specification for Sic (Silicon Carbide) Material Semiconductor Discrete Devices

Professional Standard - Aerospace

• QJ 2300-1992 Microwave Ferrite Materials and Device Series Type Spectrum

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

• JEDEC JEP122H-2016 Failure Mechanisms and Models of Semiconductor Devices (JEP122H)
• JEDEC JEP 122H-2016 Failure Mechanisms and Models of Semiconductor Devices
• JEDEC JEP122F-2010 Failure Mechanisms and Models for Semiconductor Devices
• JEDEC JEP122G-2011 Failure Mechanisms and Models for Semiconductor Devices
• JEDEC JEP122D-2008 Failure Mechanisms and Models for Semiconductor Devices

British Standards Institution (BSI)

• BS EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
• BS IEC 62951-5:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for thermal characteristics of flexible materials
• BS IEC 62951-4:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
• BS IEC 60747-5-4:2022+A1:2024 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
• BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
• BS EN 62047-18:2013 Semiconductor devices. Micro-electromechanical devices. Bend testing methods of thin film materials
• BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
• BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
• BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
• BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
• BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
• BS EN IEC 60747-15:2024 Semiconductor devices - Discrete devices. Isolated power semiconductor devices
• BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices. Test method for Poisson's ratio of thin film MEMS materials
• BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
• BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors
• BS EN 62779-3:2016 Semiconductor devices. Semiconductor interface for human body communication. Functional type and its operational conditions
• BS EN 60747-15:2012 Semiconductor devices. Discrete devices. Isolated power semiconductor devices
• BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
• BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
• BS EN 60749-39:2006 Semiconductor devices - Mechanical and climatic test methods - Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
• BS PD IEC/TR 63133:2017 Semiconductor devices. Scan based ageing level estimation for semiconductor devices
• BS IEC 60747-14-1:2010 Semiconductor devices - Semiconductor sensors - Generic specification for sensors
• BS EN 62047-20:2014 Semiconductor devices. Micro-electromechanical devices. Gyroscopes
• BS IEC 60747-7:2000 Discrete semiconductor devices and integrated circuits-Bipolar transistors

Indonesia Standards

• SNI 19-0429-1989 Guide for sampling of liquid and semi solid materials

American Society for Testing and Materials (ASTM)

• ASTM F42-02 Test methods for conductivity types of semiconductor materials

Defense Logistics Agency

• DLA MIL-S-19500/273 A VALID NOTICE 3-2011 Semiconductor Device, Transistor Type Type 2N744
• DLA MIL-S-19500/529 VALID NOTICE 4-2011 Semiconductor Device, Transistor, Silicon Type 2N3904
• DLA MIL-S-19500/303 VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N2631 and 2N2876
• DLA MIL-PRF-19500/672-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ
• DLA MIL-S-19500/298 VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon Type 1N1742A
• DLA MIL-S-19500/236 A VALID NOTICE 3-2011 Semiconductor Device, Diode, Silicon Type 1N31
• DLA MIL-S-19500/170 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Type 2N1499A
• DLA MIL-S-19500/216 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon Type 2N1051
• DLA MIL-S-19500/288 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N2377
• DLA MIL-S-19500/179 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Silicon Type 2N1234
• DLA MIL-S-19500/229 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N830AM (Navy)
• DLA MIL-S-19500/215 VALID NOTICE 3-2011 Semiconductor Device, Transistor, Types 2N1173 and 2N1174 (Navy)
• DLA MIL-S-19500/49 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Types 2N464, 2N465, 2N467
• DLA MIL-PRF-19500/695 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N4033UE1 JAN, JANTX, JANJ
• DLA MIL-S-19500/227 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N995M (Navy)
• DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
• DLA MIL-PRF-19500/686 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, PNP, Silicon, Switching, Type 2N2907AUE1 JAN, JANTX, JANJ
• DLA MIL-PRF-19500/672 VALID NOTICE 2-2011 Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Type 2N2222AUE1 JAN, JANTX, JANJ
• DLA MIL-S-19500/72 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium Types 2N499 and 2N499A
• DLA DSCC-DWG-04029-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5927
• DLA MIL-S-19500/330 A VALID NOTICE 4-2011 Semiconductor Device, Transistor PNP, Germanium Types 2N1557A through 2N1560A
• DLA MIL-S-19500/58 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N665
• DLA MIL-S-19500/36 C VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, High-Power Type 2N297A
• DLA MIL-S-19500/80 E VALID NOTICE 4-2011 Semiconductor Device, Transistor, NPN, Silicon, Low-Power Type 3N35
• DLA DSCC-DWG-04030-2005 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER TYPE 2N5926
• DLA MIL-S-19500/25 B VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N240
• DLA MIL-S-19500/51 E VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low Power Type 2N466
• DLA MIL-S-19500/68 A VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Switching Type 2N1120
• DLA MIL-S-19500/44 D VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP, Germanium, Low-Power Type 2N428
• DLA MIL-S-19500/338 VALID NOTICE 4-2011 Semiconductor Device, Transistor, PNP Germanium, Switching Type 2N3449
• DLA MIL-S-19500/13 B VALID NOTICE 3-2011 Semiconductor Device, Transistor, PNP, Germanium, High Power Type 2N174A
• DLA DESC-DWG-84002-1984 HEAT SINKS FOR SEMICONDUCTOR DEVICES

Military Standards (MIL-STD)

• MIL MIL-S-19500/530-1979 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906
• MIL MIL-S-19500/529-1978 SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3904
• MIL MIL-S-19500/288-1964 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPE 2N2377
• MIL MIL-S-19500/289-1964 Semiconductor Device, Transistor, PNP, Silicon Type 2N2378
• MIL MIL-S-19500/352-1966 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
• MIL MIL-S-19500/303-1964 Semiconductor Device, Transistor, Types 2N2631 and 2N2876
• MIL MIL-S-19500/298-1964 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A
• MIL MIL-PRF-19500/686-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ
• MIL MIL-PRF-19500/695-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UEI JAN, JANTX, JANJ
• MIL MIL-PRF-19500/672-2001 SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC,NPN, SILICON, SWITCHING, TYPE 2N222AUE1 JAN, JANTX, JANJ
• MIL MIL-S-19500/215-1961 SEMICONDUCTOR DEVICE, TRANSISTOR, TYPES 2N1173 AND 2N1174 (NAVY)
• MIL MIL-S-19500/340-1965 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH POWER TYPE 2N2079A
• MIL MIL-S-19500/227-1962 SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M (NAVY)
• MIL MIL-S-19500/364-1966 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE IN1838
• MIL MIL-S-19500/310-1965 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N2834 (NO S/S DOCUMENT)
• MIL MIL-S-19500/338-1965 SEMICONDUCTOR DEVICE, TRANSISTOR, PNP GERMANIUM, SWITCHING TYPE 2N3449
• MIL MIL-S-19500/229-1962 SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830AM (NAVY)
• MIL MIL-S-19500/247-1962 SEMICONDUCTOR DEVICES TRANSISTOR, NPN, SILICON TYPE 2N1493 (NO S/S DOCUMENT)
• MIL MIL-S-19500/360-1966 SEMICONDUCTOR DEVICE, TRANSISTOR TYPES 2N2996 AND 2N2997 (NO S/S DOCUMENT)
• MIL MIL-S-19500/163-1961 SEMICONDUCTOR DEVICE TRANSISTOR, NPN, SILICON TYPE 2N1072 (NO S/S DOCUMENT)

Japanese Industrial Standards Committee (JISC)

• JIS C 7012:1982 Type designation system for discrete semiconductor devices
• JIS C 5630-2:2009 Semiconductor devices -- Micro-electromechanical devices-- Part 2: Tensile testing method of thin film materials
• JIS C 5630-18:2014 Semiconductor devices -- Micro-electromechanical devices -- Part 18: Bend testing methods of thin film materials

International Electrotechnical Commission (IEC)

• IEC 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
• IEC 62951-5:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 5: Test method for thermal characteristics of flexible materials
• IEC 60747-14-4:2011 Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers
• IEC 60747-15:2024 RLV Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
• IEC 60747-15:2024 Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
• IEC 60747-5-4:2024 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• IEC 60747-5-4:2022+AMD1:2024 CSV Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
• IEC 60747-14-2:2000 Semiconductor devices - Part 14-2: Semiconductor sensors; Hall elements
• IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
• IEC 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions

German Institute for Standardization

• DIN IEC 60747-11:1992 Semiconductor devices; sectional specification for semiconductor devices; identical with IEC 60747-11:1985
• DIN EN IEC 62969-2:2018-09*VDE 0884-69-2:2018-09 Semiconductor devices – Semiconductor interface for automotive vehicles
• DIN EN IEC 62969-4:2019-03*VDE 0884-69-4:2019-03 Semiconductor devices – Semiconductor interface for automotive vehicles
• DIN IEC 60747-10:1987 Semiconductor devices; generic specification for semiconductor devices and integrated circuits; identical with IEC 60747-10, edition 1984
• DIN EN IEC 62969-1:2018-08*VDE 0884-69-1:2018-08 Semiconductor devices – Semiconductor interface for automotive vehicles
• DIN VDE V 0884-11:2017-01*VDE V 0884-11:2017-01 Semiconductor devices
• DIN EN IEC 62969-3:2018-12*VDE 0884-69-3:2018-12 Semiconductor devices – Semiconductor interface for automotive vehicles
• DIN EN IEC 60747-17:2021-10*VDE 0884-17:2021-10 Semiconductor devices
• DIN EN IEC 60747-5-5:2021-10*VDE 0884-5:2021-10 Semiconductor devices
• DIN EN 62779-1:2017-01*VDE 0884-79-1:2017-01 Semiconductor devices – Semiconductor interface for human body communication
• DIN IEC 60747-10:1987-10 Semiconductor devices; generic specification for semiconductor devices and integrated circuits; identical with IEC 60747-10, edition 1984
• DIN EN 62779-3:2017-03*VDE 0884-79-3:2017-03 Semiconductor devices – Semiconductor interface for human body communication
• DIN EN 62779-2:2017-01*VDE 0884-79-2:2017-01 Semiconductor devices – Semiconductor interface for human body communication
• DIN EN 60747-15:2012-08 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (IEC 60747-15:2010); German version EN 60747-15:2012 / Note: DIN EN 60747-15 (2004-08) remains valid alongside this standard until 2014-01-20.
• DIN IEC 747-11:1992 Semiconductor devices; Sectional specification for semiconductor devices
• DIN 41885:1976 Cases type 101 for semiconductor devices; main dimensions
• DIN EN 62047-2:2007-02 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials (IEC 62047-2:2006); German version EN 62047-2:2006
• DIN EN 62047-10:2012-03 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
• DIN 44476-1:1982 Types of semiconductor devices and integrated circuit memories

Czech Standards Institute (UNMZ)

• CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices

Korean Agency for Technology and Standards (KATS)

• KS C 7013-2004 TYPE DESIGNATION SYSTEM FOR SEMICONDUCTOR DEVICES
• KS C IEC 62047-18-2021 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
• KS C IEC 62047-22-2021 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
• KS C IEC 62047-22:2016 Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials
• KS C IEC 62047-22-2016(2021) Semiconductor devices ― Micro-electromechanical devices ― Part 18: Bend testing methods of thin film materials

Danish Standards Foundation

• DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• DANSK DS/EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
• DANSK DS/EN 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
• DANSK DS/EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials

Aerospace Industries Association/ANSI Aerospace Standards

• NAS4121-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Formed
• NAS4119-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Press-On Type
• NAS4119-2011 HEAT SINK@ ELECTRONIC COMPONENT@ SEMICONDUCTOR DEVICES@ PRESS-ON TYPE (Rev 1)

Kingdom of Bahrain Testing and Metrology Directorate

• BH GSO IEC 60747-15:2016 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• BH GSO IEC 62047-10:2016 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
• BH GSO IEC 60747-5-4:2016 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• BH GSO IEC 60747-14-2:2016 Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements

Swedish Institute for Standards

• SS-EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• SS-EN IEC 60749-39:2022 Semiconductor devices - Mechanical and climatic test methods - Part 39: Measurement of moisture diffusivity and water solubility in organic materials used for semiconductor components
• SS-EN 62047-10:2012 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials
• SS-EN 62047-18:2013 Semiconductor devices - Micro-electromechanical devices - Part 18: Bend testing methods of thin film materials
• SS-EN 62047-2:2007 Semiconductor devices: Part 2: Micro-electromechanical devices - Tensile testing methods of thin film materials

Association Francaise de Normalisation

• NF EN IEC 60747-15:2024 Semiconductor devices - Part 15 : discrete devices - Isolated power semiconductor devices
• NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15: isolated semiconductor power devices
• NF C96-050-18*NF EN 62047-18:2014 Semiconductor devices - Micro-electromechanical devices - Part 18 : bend testing methods of thin film materials
• NF C96-779-3*NF EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3 : functional type and its operational conditions
• NF C96-015*NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15 : isolated power semiconductor devices
• NF C96-015:2005 Discrete semiconductor devices - Part 15: isolated power semiconductor devices
• NF EN 62047-18:2014 Semiconductor devices - Microelectromechanical devices - Part 18: bending test methods for thin film materials
• NF EN 62047-2:2006 Semiconductor devices - Microelectromechanical devices - Part 2: tensile testing methods for thin film materials
• NF C96-050-21*NF EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21 : test method for Poisson's ratio of thin film MEMS materials

The Directorate General of Specifications and Metrology (DGSM)

• OS GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• OS GSO IEC 60747-5-4:2014 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
• OS GSO IEC 62047-2:2014 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials

Comitato Elettrotecnico Italiano

• CEI EN 60747-15:2012 Semiconductor devices - Discrete devices Part 15: Isolated power semiconductor devices
• CEI EN IEC 60747-15:2025 Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices

Thai Industrial Standards Institute (TISI)

• TIS 1864-2009 Semiconductor devices.part 7: bipolar transistors
• TIS 1863-2009 Semiconductor devices.discrete devices

Spanish Association for Standardization (UNE)

• UNE-EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices (Endorsed by AENOR in June of 2012.)
• UNE-EN 62047-10:2011 Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (Endorsed by AENOR in December of 2011.)

GCC Standardization Organization

• GSO IEC 60747-14-2:2014 Semiconductor devices - Part 14-2: Semiconductor sensors - Hall elements
• GSO IEC 62047-2:2014 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
• GSO IEC 62779-3:2021 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions

European Committee for Electrotechnical Standardization（CENELEC）

• EN IEC 60747-15:2024 Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
• EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions
• EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
• EN 60747-15:2004 Discrete semiconductor devices Part 15: Isolated power semiconductor devices

Finnish Standards Institute

• SFS-EN IEC 60747-15:2024 Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices
• SFS-EN 62779-3:2016 Semiconductor devices - Semiconductor interface for human body communication - Part 3: Functional type and its operational conditions

Others: New semiconductor materials and devices