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UV semiconductor detection

UV semiconductor detection, Total:78 items.

The international standard classification for "UV semiconductor detection" includes: Optics and optical measurements , Integrated circuits. Microelectronics , Semiconductor devices .

The Chinese standard classification for "UV semiconductor detection" includes: Semiconductor emitting device , Technical management , Inorganic chemicals in general , Microcircuit in general , Semiconductor triode , Thermal Measurement .


Professional Standard - Electron

  • SJ/T 11818.2-2022 Semiconductor UV Emitting Diodes Part 2: Chip Specifications
  • SJ/T 11818.1-2022 Semiconductor UV-emitting diodes Part 1: Test methods
  • SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
  • SJ/T 11818.3-2022 Semiconductor UV-emitting diodes Part 3: Device Specifications
  • SJ 2658.1-1986 Methods of Measurement for Semiconductor Infrared Diodes - General Rules

国家市场监督管理总局、中国国家标准化管理委员会

  • GB/T 37131-2018 Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy
  • GB/T 7092-2021 Outline dimensions of semiconductor integrated circuits

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

  • GB/T 37131-2018e Nanotechnologies—Test method of semiconductor nanopowder using UV-Vis diffuse reflectance spectroscopy
  • GB/T 7092-1993 Outline dimensions of semiconductor integrated circuits
  • GB/T 7581-1987 of outlines for semiconductor discrete devices
  • GB/T 37131-2018(英文版) Nanotechnology - Testing method of UV-visible diffuse reflectance spectrum of semiconductor nanopowder materials

Group Standards of the People's Republic of China

机械工业部

National Metrological Verification Regulations of the People's Republic of China

Military Standard of the People's Republic of China-General Armament Department

  • GJB 1420A-1999 General Specification for Semiconductor Integrated Circuit Enclosures
  • GJB 33/15-2011 Semiconductor optoelectronic device.Detail specification for type BT401 semiconductor infrared-emitting diode

Association Francaise de Normalisation

  • NF ISO 10677:2011 Céramiques techniques - Sources lumineuses UV destinée aux essais des matériaux photocatalytiques semi-conducteurs
  • NF B44-103*NF ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials
  • NF EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IDO system - Part 1: Acoustic variation detection test method
  • NF EN 60749-3:2017 Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 3 : examen visuel externe

British Standards Institution (BSI)

  • BS IEC 60747-14-11:2021 Semiconductor devices - Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • BS EN 60749-3:2017 Semiconductor devices. Mechanical and climatic test methods - External visual examination
  • 19/30390371 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • 18/30362458 DC BS IEC 60747-14-11. Semiconductor devices. Part 14-11. Semiconductor sensors. Test method of surface acoustic wave based integrated sensor for measuring ultra violet, illumination and temperature
  • BS ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics). Ultraviolet light source for testing semiconducting photocatalytic materials
  • BS EN IEC 63364-1:2022 Semiconductor devices. Semiconductor devices for IoT system - Test method of sound variation detection

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

HU-MSZT

International Organization for Standardization (ISO)

  • ISO 10677:2011 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet light source for testing semiconducting photocatalytic materials

German Institute for Standardization

  • DIN 50443-1:1988 Testing of materials for use in semiconductor technology; detection of crystal defects and inhomogeneities in silicon single crystals by X-ray topography
  • DIN EN 60749-3:2018-01 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination (IEC 60749-3:2017); German version EN 60749-3:2017 / Note: DIN EN 60749-3 (2003-04) remains valid alongside this standard until 2020-04-07.
  • DIN 50447:1995 Testing of materials for semiconductor technology - Contactless determination of the electrical sheet resistance of semiconductor layers with the eddy-current method
  • DIN 50446:1995 Testing of materials for semiconductor technology - Determination of defect types and defect densities of silicon epitaxial layers
  • DIN 50449-1:1997 Testing of materials for semiconductor technology - Determination of impurity content in semiconductors by infrared absorption - Part 1: Carbon in gallium arsenide

International Electrotechnical Commission (IEC)

  • IEC 60747-14-11:2021 Semiconductor devices - Part 14-11: Semiconductor sensors - Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
  • IEC 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination

KR-KS

  • KS L ISO 10677-2023 Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet light source for testing semiconducting photocatalytic materials
  • KS C IEC 60749-3-2019 Semiconductor devices — Mechanical and climatic test methods — Part 3: External visual examination

GSO

  • OS GSO ISO 10677:2015 Fine ceramics (advanced ceramics, advanced technical ceramics) -- Ultraviolet light source for testing semiconducting photocatalytic materials
  • GSO ISO 10677:2015 Fine ceramics (advanced ceramics, advanced technical ceramics) -- Ultraviolet light source for testing semiconducting photocatalytic materials
  • OS GSO IEC 60749-3:2014 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual inspection
  • GSO IEC 60749-3:2014 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual inspection

Korean Agency for Technology and Standards (KATS)

  • KS D 2717-2008(2018) Evaluation of metallic/semiconducting ratio of single-walled carbon nanotube soots using UV-VIS-NIR absorption spectroscopy
  • KS C IEC 60749-3:2019 Semiconductor devices — Mechanical and climatic test methods — Part 3: External visual examination
  • KS C IEC 60748-11-1-2020 Semiconductor devices-Integrated circuits-Part 11-1:Internal visual examination for semiconductor integrated circuits excluding hybrid circuits
  • KS C IEC 60748-11-1:2004 Semiconductor devices-Integrated circuits-Part 11-1:Internal visual examination for semiconductor integrated circuits excluding hybrid circuits

SE-SIS

  • SIS SS IEC 759:1986 Nuclear instrumentation —Test procedures for semiconductor X-ray energy spectrometers

TR-TSE

  • TS 2643-1977 Test Procedures For Bemiconductor Detectors For Ionizing Radiation

ES-UNE

  • UNE-EN 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination (Endorsed by Asociación Española de Normalización in July of 2017.)

SCC

  • CEI EN 60749-3:2017 Semiconductor devices - Mechanical and climatic test methods Part 3: External visual examination
  • CEI EN IEC 63364-1:2023 Semiconductor devices - Semiconductor devices for IoT system Part 1: Test method of sound variation detection
  • DANSK DS/EN IEC 63364-1:2023 Semiconductor devices – Semiconductor devices for IoT system – Part 1: Test method of sound variation detection

Indonesia Standards

AENOR

  • UNE-EN 60749-3:2003 Semiconductor devices - Mechanical and climatic test methods -- Part 3: External visual examination.

American Society for Testing and Materials (ASTM)

  • ASTM F584-06 Standard Practice for Visual Inspection of Semiconductor Lead-Bonding Wire
  • ASTM F584-06e1 Standard Practice for Visual Inspection of Semiconductor Lead-Bonding Wire

Defense Logistics Agency

YU-JUS

American National Standards Institute (ANSI)

IN-BIS