Rectifier Diode Inspection

Rectifier Diode Inspection, Total:107 items.

The international standard classification for "Rectifier Diode Inspection" includes: Diodes , Electrical and electronic equipment .

The Chinese standard classification for "Rectifier Diode Inspection" includes: Technical management , Power semiconductor device and parts , Semiconductor rectifier devices , Semiconductor diode , Electronic and electrical equipment .

未注明发布机构

JEDEC JESD282B.02-2023 SILICON RECTIFIER DIODES

Professional Standard - Electron

SJ 1947-1981 Detail specification for silicon power rectifier diodes,Type 2CZ32B,2DZ32B,2CZ33B and 2DZ33B
SJ 2722-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ306
SJ 2731-1986 Detail specification for silicon high speed switching rectifier fiodes,Type 2CZ317
SJ 2720-1986 Detail specification for silicon medium speed switching recitifier diodes,Type 2CZ304
SJ 2729-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ315
SJ 2732-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ318
SJ/T 10031-1991 Detail specification for electronic component currect regulator diodes for types 2DH1~14
SJ 2718-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ302
SJ 2730-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ316
SJ 2725-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ311
SJ 2723-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ307
SJ 2719-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ204 and 2CZ205
SJ 2721-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ305
SJ 1230-1977 Methods of measurement for high frequency rectified current of germanium detector diodes
SJ 2724-1986 Detail specification for silicon high speed switching rectifier diodes,Type 2CZ308
SJ 2728-1986 Detail specification for silicon medium speed switching rectifier diodes,Type 2CZ314
SJ 2726-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ312
SJ 2717-1986 Detail specification for silicon general purpose rectifier diodes,Type 2CZ301
SJ 2727-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ313

Professional Standard - Machinery

JB/T 5841-1991 ZH Series 200A and above Case Rated High Voltage Rectifier Diode
JB/T 7624-2013 Testing Methods for Rectifier Diodes
JB/T 5836-1991 ZK Series 5A and Above Case-rated Fast Recovery Rectifier Diodes
JB/T 11983-2023 Agricultural and forestry tractors and machinery alternator rectifier diodes
JB/T 5837-1991 ZP Series 2000A and above Case - Rated Rectifier Diodes

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 6351-1998 Semiconductor devices--Discrete devices Part 2:Rectifier diodes Section One--Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rate
GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes
GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A

Taiwan Provincial Standard of the People's Republic of China

CNS 3998-1989 Method of Test for Small Signal Diodes
CNS 6121-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(Continuous Applying Voltage Test of Rectifier Diodes)
CNS 6125-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices(High Temperature for Applying Voltage Test of Rectifier Diodes)
CNS 6119-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Continuous Operation Test of Rectifier Diodes)
CNS 6123-1988 Environmental Testing Methods and Endurance Testing Methods for Discrete Semiconductor Devices (Intermittent Appling Voltage Test of Rectifier Diodes)

Professional Standard - Automobile

QC/T 706-2004 Technical specification of silicon avalanche rectification for motor vehicles
QC/T 422-2000 Automobile silicon rectifier diode

机械电子工业部

JB 5837-1991 ZP series case rated rectifier diodes above 2000A

Guizhou Provincial Standard of the People's Republic of China

DB52/T 861-2013 Detail specification for 2CB003 type silicon avalanche rectifier diode

National Metrological Verification Regulations of the People's Republic of China

JJG(电子) 04044-1991 Verification regulations of YWS2980A rectifier diode I _FSN and I ² t tester

Japanese Industrial Standards Committee (JISC)

JIS C 7033:1975 Testing methods for semiconductor rectifier diodes
JIS C 7222:1978 Reliability assured low current rectifier diodes
JIS C 7225:1982 Reliability assured rectifier diodes (medium and high current)

YU-JUS

JUS N.R1.421-1979 Rectffiar diodes. Measuring methods
JUS N.R1.372-1979 Semiconductor diodes. Essential ratmgs and characteristics: rectifier diodes

RU-GOST R

GOST 21011.5-1978 High-voltage kenotrons. Methods of measurement of cathode heatting time and readiness time controlling
GOST 21011.1-1976 High-voltage kenotrons. The anode current measurement method
GOST 21011.4-1977 High-voltage kenotrons. Test methods of electric strength
GOST 20693-1975 Hign-voltage kenotrons. Terms and definitions
GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
GOST 21011.3-1977 High-voltage kenotrons. Heater current measuring method
GOST 21011.7-1980 High-voltage kenotrons. The emission current measurement method
GOST 21011.6-1978 High-voltage kenotrons. Test method for multiple switching on and switching off the heating voltage
GOST 19656.2-1974 Semiconductor UHF mixer diodes. Measurement method of rectified current

IECQ - IEC: Quality Assessment System for Electronic Components

PQC 75-1991 Semiconductor Devices - Discrete Devices - Rectifier Diodes Blank Detail Specification: Rectifier Diodes (Including Avalanche Rectifier Diodes)@ Ambient and Case-Rated@ Greater Than 100 A

GOST

GOST R 70873-2023 Semiconductor rectifier diodes and poles. Parameters system

European Standard for Electrical and Electronic Components

CECC 50 008- 005 Ambient Rated Rectifier Diode (En)
CECC 50 008- 004 Ambient Rated Rectifier Diode (En)
EN 150009:1992 Blank detail specification: case-rated rectifier diodes
CECC 50 008- 014 UTE C 86-818/014; Ambient Rated Rectifier Diodes (Fr)
EN 150008:1992 Blank detail specification: ambient-rated rectifier diodes

Korean Agency for Technology and Standards (KATS)

KS C 5204-1980(2000) RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
KS C 5204-1980 RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C IEC 60747-2-1-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 60747-2-1-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 5204-2002 RELIABILITY ASSURED LOW CURRENT RECTIFIER DIODES
KS C IEC 60747-2-2-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C IEC 60747-2-2-2021 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C 6045-2002 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C IEC 60747-2-1-2021 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 5217-1983 RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)
KS C IEC 60747-2-1:2006 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 5217-2002 RELIABILITY ASSURED RECTIFIER DIODES (MEDIUM AND HIGH CURRENT)

SCC

BS 9300 C556-563:1971 Detail specifications for silicon power rectifier diodes
BS 9300 C564-571:1971 Detail specifications for silicon power rectifier diodes
BS 9300 C572-579:1971 Detail specifications for silicon power rectifier diodes
DIN EN 150009:1993 Blank detail specification: case-rated rectifier diodes; German version EN 150009:1991
DIN EN 150008:1993 Blank detail specification: ambient-rated rectifier diodes; German version EN 150008:1992
MIL MIL-PRF-19500/228R-2013 Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN and JANTX
MIL MIL-PRF-19500/228T-2015 Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN and JANTX
MIL MIL-PRF-19500/228U-2018 Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN and JANTX
MIL MIL-PRF-19500/228P-2011 Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN and JANTX
MIL MIL-PRF-19500/228N-2010 Diode, Silicon, Rectifier, Types 1N3611, 1N3612, 1N3613, 1N3614, 1N3957, JAN and JANTX
BS 6493-1.2:1984 Semiconductor devices. Discrete devices-Recommendations for rectifier diodes

International Electrotechnical Commission (IEC)

IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
IEC 60747-2:2016 Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60747-2:1983 Semiconductor devices. Discrete devices. Part 2 : Rectifier diodes

TH-TISI

TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a

British Standards Institution (BSI)

BS 9300 C476:1973 Detail specification for silicon avalanche rectifier diode
BS 9300 C667-668:1971 Detail specification for silicon avalanche rectifier diodes
BS EN 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
BS IEC 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes

Association Francaise de Normalisation

NF C96-821:1981 Semiconductor Devices High Power rectifier diodes
NF C86-818/A1:1981 Rectifier diodes at specified ambient temperature

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD282B.01-2002 Silicon Rectifier Diodes Revision of EIA-JESD282-B

Danish Standards Foundation

DS/IEC 747-2-1:1990 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. Section one: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
DS/IEC 747-2:1985 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes

CZ-CSN

CSN IEC 747-2-1:1993 Semiconductor devices. Diskrete devices. Part 2: Rectifier diodes. Section 1 - Blank detail specification for rectifier diodes (including avalanche diodes), ambient and case-rated, up to 100A

SE-SIS

SIS SS-CECC 50009-1991 Blank detail specification:Case-rated rectifier diodes
SIS SS-CECC 50008-1991 Blank detail specification: Ambient-rated rectifier diodes

RO-ASRO

STAS 10228-1984 SILICON RECTIFIER DIODES General tehnical requirements lor quality

Defense Logistics Agency

DLA DSCC-DWG-03021-2003 SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, MODULE, HIGH VOLTAGE, 1N5597, 1N5600, 1N5603, TX AND TXV

Standard Association of Australia （SAA）

AS 2547.1.2:1986 Semiconductor devices, Part 1.2: Discrete devices - Rectifier diodes