diode cp

diode cp, Total:427 items.

The international standard classification for "diode cp" includes: Electronic display devices , Optoelectronics. Laser equipment , Capacitors , Flat steel products and semi-products , Diodes , Aerospace electric equipment and systems , Glass products , Fluorescent lamps. Discharge lamps .

The Chinese standard classification for "diode cp" includes: Technical management , Technical management , Technical Management , Special electronic technology material , Computer peripherals , Microwave and millimeter wave diode and triode , Steel sheet and strip , Semiconductor diode , Electronic components , Power semiconductor device and parts , Semiconductor rectifier devices , Industrial technical glass , Semiconductor emitting device , Optical communication equipment , Electric light source products .

Professional Standard - Education

JY 182-1984 vacuum diode

工业和信息化部

SJ/T 11767-2020 Measurement method of low-frequency noise parameters for diodes
SJ/T 11624-2016 Specifications of LED devices for LED displays
SJ/T 2749-2016 Semiconductor Laser Diode Test Methods
QC/T 1038-2016 Light-emitting diodes (LED) and modules for automotive
QB/T 5478-2020 LED-UV curing offset ink

Professional Standard - Military and Civilian Products

WJ 2100-2004 Test method for silicon photodiodes and silicon avalanche photodiodes
WJ 2506-1998 Verification Regulations for Photodiode Dynamic Tester
WJ 2539-1999 Verification Regulations for Temperature Measuring Diode Meter
WJ 2265-1995 Specifications for Preamplified Silicon Avalanche Photodiodes

未注明发布机构

ANSI C82.16-2015 Light-Emitting Diode Drivers — Methods of Measurement
JEDEC JESD282B.02-2023 SILICON RECTIFIER DIODES
ANSI C78.51-2016 Electric Lamps — LED (Light Emitting Diode) Lamps — Method of Designation

Professional Standard - Electron

SJ 909-1974 Detail specification for silicon voltage regulator diodes,Type 2CW50~149
SJ 2727-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ313
SJ 2750-1987 Outline dimensions for semiconductor laser diodes
SJ 1228-1977 Detail specification for germanium wideband detector diodes,Type 2AP30~2AP31
SJ 1806-1981 Detail specification for silicon band switching varialbe capacitance diodes,Type 2CC110,2CC210,2CC310,2CC410,2CC130
SJ/T 11281-2007 Test methods of LED panels
SJ 2749-1987 Method of measurement for semiconductor laser diodes
SJ/T 11401-2009 Series program for semiconductor light emitting diodes
SJ 1805-1981 Detail specification for silicon frequency modulated variable capacitance diodes,Type 2CC126
SJ/T 11281-2017 Measure methods of light emitting diode (LED) displays
SJ/T 2216-2015 Technical specification for photodiode of silicon
SJ 1386-1978 Measurement conditions for noise-generator diodes and gas discharge noise tubes
SJ 2216-1982 Silicon photodiodes
SJ 1946-1981 Detail specification for silicon voltage booster diodes,Type 2CN4C,2DN4C,2CN5C and 2DN5C
SJ 1381-1978 Structure and technology of test diode
SJ 2218-1982 Semiconductor photocouplers in the diode mode
SJ 1229-1977 Detail specification for germanium switching diodes,Type 2AK1~20
SJ 1392-1978 Methods of measurement for excess noise power of noise-generator diodes
SJ 1225-1977 Detail specification for germanium detector diodes,Type 2AP11~2AP17
SJ 1947-1981 Detail specification for silicon power rectifier diodes,Type 2CZ32B,2DZ32B,2CZ33B and 2DZ33B
SJ 2725-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ311
SJ 2717-1986 Detail specification for silicon general purpose rectifier diodes,Type 2CZ301
SJ 2726-1986 Detail specification for general purpose silicon rectifier diodes,Type 2CZ312
SJ/T 11470-2014 Epitaxial wafers of light-emitting diodes
SJ 1226-1977 Detail specification for germanium detector diodes,Type 2AP9~2AP10
SJ 20788-2000 Measurment method for thermal impedance of semiconductor diodes
SJ/T 2354-2015 Measuring methods for photodiodes of PIN、APD
SJ 2747-1987 Blank detail specification for step-function recovery diodes
SJ 1389-1978 Methods of measurement for diodes leakage current between electrodes of noise-generator diodes
SJ/T 2354-2015/0352 Measuring methods for photodiodes of PIN、APD
SJ/T 11397-2009 Phosphors for light emitting diodes
SJ 1227-1977 Detail specification for germanium detector diodes,Type 2AP1~2AP8,2AP21 and 2AP27
SJ 1388-1978 Methods of measurement for anode conductance of noise-generator diodes
SJ/T 11394-2009 Measure methods of semiconductor light emitting diodes
SJ/T 11399-2009 Measurement methods for chips of light emitting diodes
SJ 20785-2000 Measuring methods for super luminescent diode module
SJ 910-1974 Detail specification for silicon voltage regulator diodes,Type 3DW50~202
SJ 2140-1982 Methods of measurement for limiting voltage of silicon current regulator diodes
SJ 2137-1982 General procedures of measurement for silicon current-regulator diodes
SJ 2005-1982 Detail specification for N channel junction pair field-effect transistors,Type CS34
SJ/T 11141-2017 Generic specification for LED displays
SJ/T 11471-2014 Measurement methods for epitaxial wafers of light-emitting diodes

Taiwan Provincial Standard of the People's Republic of China

CNS 13810-1997 Lead Frames for Light Emitting Diodes
CNS 13808-1997 Epitaxial Wafers for Light Emitting Diodes
CNS 13652-1996 Reliability Testing for Light Emitting Diode(for Communication)
CNS 13654-1996 Measuring Methods for Photodiode(for Communication)
CNS 13648-1996 Measuring Methods for Laser Diode(for Communication)
CNS 13092-1992 Measuring Method for LED Outdoor Display Panels
CNS 13807-1997 Methods of Test of Epoxy for Light Emitting Diodes
CNS 11830-1987 Measuring Methods for Light Emitting Diodes (for Indication)
CNS 3998-1989 Method of Test for Small Signal Diodes
CNS 8383-1982 Forward Transient Measurement on Semiconductor Diodes
CNS 13651-1996 Measuring Methods for Light Emitting Diode(for Communication)
CNS 13811-1997 Numerical-Type Reflectors for Light Emitting Diodes
CNS 13809-1997 Light Emitting Diode Dice
CNS 13655-1996 Reliability Testing for Photodiode(for Communication)
CNS 11829-1987 Light Emitting Diodes (for Indication)

Professional Standard - Ferrous Metallurgy

YB/T 4215-2010 Cold rolled precision strip for the lead frame of diode

Jiangxi Provincial Standard of the People's Republic of China

DB36/T 579-2010 LED(Light emitting diode)Road light

Professional Standard - Aerospace

QJ 2493-1993 Acceptance specification for microwave diodes and transistors
QJ 1299-1987 Specification for Screening of Silicon Microwave Mixer and Detector Diodes
QJ 2362-1992 Screening Specification for Step Recovery Diodes
QJ 1907-1990 PIN Diode Screening Specifications

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e
GB/T 6570-1986 Measuring methods for microwave diodes
GB/T 15137-1994 Blank detail specification for Gunn diodes
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle
GB/T 15178-1994 Blank detail specification for variable capacitance diodes
GB/T 6351-1998 Semiconductor devices--Discrete devices Part 2:Rectifier diodes Section One--Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rate
GB/T 16894-1997 Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A
GB 51209-2016 Code for design of light emitting diode plant

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

GB/T 35846-2018 Lighting glass tube for light emitting diode

Professional Standard - Machinery

JB/T 5841-1991 ZH Series 200A and above Case Rated High Voltage Rectifier Diode
JB/T 10875-2008 Measuring methods for optical proerties of LEDs
JB/T 7624-2013 Testing Methods for Rectifier Diodes
JB/T 5837-1991 ZP Series 2000A and above Case - Rated Rectifier Diodes
JB/T 5186-1991 Silicon photodiodes for cameras

Fujian Provincial Standard of the People's Republic of China

DB35/T 2107-2022 Ultraviolet light-emitting diode evaluation method
DB35/T 1611-2016 COB Package White Light Emitting Diode Technical Specifications
DB35/T 1370-2013 Light-emitting diode chip point test method
DB35/T 1176-2011 Power LEDs for road lighting
DB35/T 1193-2011 Semiconductor LED chip

Professional Standard - Urban Construction

CJ/T 361-2011 Light emitting diode (LED) lamp used in waterscape

Military Standard of the People's Republic of China-General Armament Department

GJB 3930-2000 General specification for infrared emitting diodes
GJB 2146A-2011 General specification for semiconductor light-emitting diode devices
GJB 2146-1994 General specification for light-emitting diode solid-state displays
GJB 3519-1999 General Specification for Semiconductor Laser Diodes

Group Standards of the People's Republic of China

T/QDAS 070-2021 Formula of boron diffusion liquid source for diode diffuser
T/QGCML 097-2021 Diode diffuser packaging technical specification
T/CSA 047-2019 Measurement Method for Real Thermal Resistance and Impedance of Light Emitting Diodes
T/COEMA 004LCD-2022 Polarizer film for the Organic Light-Emitting Diode TV Display
T/QGCML 030-2020 Conventional Electrical Standards for Diode Diffusion Sheets
T/CSA 015-2012 Organic light emitting diode (OLED) lighting—Measuring methods
T/CIECCPA 003-2019 Specification for green production and processing of LED
T/CSTM 01039-2023 Substrate glass for mini light emitting diodes
T/ZZB 2332-2021 Polished sapphire substrate for LED
T/CPIA 0052-2023 Module diodes for photovoltaic module junction boxes
T/QDAS 094-2022 Mixed Acid Formula for Diode GPP Groove Cleaning
T/QGCML 3251-2024 Light-emitting diode thermal impedance test method
T/DZJN 210-2023 Light emitting diode (LED) intelligent all-in-one machine
T/CVIA 11-2016 Organic Light Emitting Diode (OLED) TV Measurement Methods
T/QDAS 050-2020 Research and development procedures for diode diffusers

邮电部

YD/T 0835-1996 Avalanche photodiode detection method
YD/T 0834-1996 Distributed feedback laser diode detection method

国家市场监督管理总局、中国国家标准化管理委员会

GB/T 36613-2018 Probe test method for light emitting diode chips

Professional Standard - Post and Telecommunication

YD/T 835-1996 Test Method of Avalanche Photodiodes
YD/T 834-1996 Test Method of Distributed Feedback Laser Diodes
YD/T 701-1993 Test Method for Semiconductor Laser Diode Assembly

机械电子工业部

JB 5837-1991 ZP series case rated rectifier diodes above 2000A

Guangdong Provincial Standard of the People's Republic of China

DB44/T 1630-2015 3528/5050 Encapsulated Chip LED

Military Standard of the People's Republic of China-Commission of Science,Technology and Industry for National Defence

GJB 5905-2006 Specification for fast recovery diodes, 600A and above

Professional Standard - Aviation

HB 5831-1983 Technical Requirements of Semiconductor Diode and Triode for Aviation

Professional Standard - Light Industry

QB/T 4057-2010 LEDs for general lighting—Performance requirements

International Electrotechnical Commission (IEC)

IEC 60747-3-1:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section One: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
IEC 60747-3:2013 Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
IEC 60747-3:1985 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes.
IEC 60747-3-2:1986 Semiconductor devices. Discrete devices. Part 3 : Signal (including switching) and regulator diodes. Section Two: Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference d
IEC 60747-3/AMD1:1991 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 1
IEC 60747-3/AMD2:1993 Semiconductor devices; discrete devices; part 3: signal (including switching) and regulator diodes; amendment 2
IEC TS 62504:2011 General lighting - LEDs and LED modules - Terms and definitions
IEC 91/926/PAS:2010 Electronic circuit board for high-brightness LEDs
IEC TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
IEC 62931:2017 GX16t-5 capped tubular led lamp - Safety specifications
IEC 60747-2-1:1989 Semiconductor devices; discrete devices; part 2: rectifier diodes; section one: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A
IEC 60747-5-8:2019 Semiconductor devices - Part 5-8: Optoelectronic devices - Light emitting diodes - Test method of optoelectronic efficiencies of light emitting diodes
IEC 60747-2-2:1993 Semiconductor devices; discrete devices; part 2: rectifier diodes; section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
IEC 62979:2017 Photovoltaic modules - Bypass diode - Thermal runaway test

Korean Agency for Technology and Standards (KATS)

KS C IEC 60747-3-1:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3-2:2006 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
KS C IEC 60747-3:2016 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes
KS C IEC 60747-3:2006 Semiconductor devices-Discrete devices-Part 3:Signal (including switching) and regulator diodes
KS C 5205-2002 RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
KS C 7120-1990 Light Emitting Diodes(for Indication)
KS C IEC 60747-3-1-2006(2021) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C IEC 60747-3-1-2006(2016) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diod
KS C 7120-2021 Light Emitting Diodes(for Indication)
KS C IEC 60747-3-1-2021 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section one：Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
KS C IEC 60747-3-2-2021 Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diodes
KS C 7120-1990(2016) Light Emitting Diodes(for Indication)
KS C 7120-1990(2021) Light Emitting Diodes(for Indication)
KS C 7003-1981 Measuring methods for small signal diodes
KS C IEC 60747-3-2-2006(2016) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
KS C 5205-1980(2000) RELIABILITY ASSURED VOLTAGE REGULATOR DIODES AND VOLTAGE REFERENCE DIODES
KS C 7003-1996 Measuring methods for small signal diodes
KS C IEC 60747-3-2-2006(2021) Semiconductor devices－Discrete devices－Part 3：Signal (including switching) and regulator diodes－Section Two：Blank detail specification for voltage-regulator diodes and voltage-reference diodes, exclud
KS C 7104-2020 Standard of measuring the performance of light emitting diodes
KS C 6990-2001 General rules of photodiodes for fiber optic transmission
KS C 7003-2017(2022) Measuring methods for small signal diodes
KS C 7003-2017 Measuring methods for small signal diodes
KS C 5300-1992 General rules of light emitting diodes for fiber optic transmission
KS C 7121-1990 Measuring Methods for Light Emitting Diodes (for Indication)
KS C 5203-1980 RELIABILITY ASSURED SMALL SIGNAL DIODES
KS C 6045-1991(2001) TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 6905-2001 General rules of laser diodes for fiber optic transmission
KS C 7121-1990(2021) Measuring Methods for Light Emitting Diodes (for Indication)
KS C 5203-1980(2000) RELIABILITY ASSURED SMALL SIGNAL DIODES
KS C 5300-1992(2022) General rules of light emitting diodes for fiber optic transmission
KS C 5301-1992 Test methods of light emitting diodes for fiber optic transmission
KS C 6045-1986 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 6905-2001(2021) General rules of laser diodes for fiber optic transmission
KS C 6991-2001 Test methods of photodiodes for fiber optic transmission
KS C IEC 60747-2-1-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C IEC 60747-2-1-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 7121-2021 Measuring Methods for Light Emitting Diodes (for Indication)
KS C 6045-2002 TESTING METHODS FOR SEMICONDUCTOR RECTIFIER DIODES
KS C 5203-2002 RELIABILITY ASSURED SMALL SIGNAL DIODES
KS C 5213-1981(1997) RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
KS C IEC 60747-2-2-2021 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C 5213-1981 RELIABILITY ASSURED LOW CURRENT SWITCHING DIODES
KS C 6906-2001 Test methods of laser diodes for fiber optic transmission
KS C IEC 60747-2-1-2021 Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section one：Blank detail specification for rectifier diodes(including avalanche rectifier diodes),ambient and case-rated, up to 100 A
KS C 6991-2013 TEST METHODS OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION
KS C 6942-2014 General rule of laser diode modules for fiber optic transmission
KS C 6942-2019 General rule of laser diode modules for fiber optic transmission
KS C IEC 60747-2-2:2006 Semiconductor devices-Discrete devices-Part 2:Rectifier diodes-Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 A
KS C IEC 60747-2-2-2006(2021) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C IEC 60747-2-2-2006(2016) Semiconductor devices－Discrete devices－Part 2：Rectifier diodes－Section Two : Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for current
KS C 7104-2005 Standard of measuring the performance of light emitting diodes
KS C 6990-2013 GENERAL RULES OF PHOTODIODES FOR FIBER OPTIC TRANSMISSION

British Standards Institution (BSI)

BS IEC 60747-3:2013 Semiconductor devices. Discrete devices: Signal, switching and regulator diodes
BS IEC 60747-5-8:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of optoelectronic efficiencies of light emitting diodes
BS EN 120001:1993 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS 9300 C199-276:1971 Detail specification for silicon voltage-regulator diodes
BS 9300 C678-721:1980 Detail specification for silicon voltage regulator diodes
BS 9300 C780-831:1971 Detail specification for silicon voltage regulator diodes
BS PD IEC/TS 62861:2017 Guidelines for principal component reliability testing for LED light sources and LED luminaires
BS 9300 C678-721:1971 Detail specification for silicon voltage regulator diodes
BS EN 120001:1991 Harmonized system of quality assessment for electronic components - Blank detail specification - Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
BS 9300 C405-429:1971 Detail specifications for silicon voltage-regulator diodes
BS 9300 C841-849:1971 Detail specification for silicon voltage regulator diodes
BS 9300 C771-772:1971 Detail specification for coaxial mixer diodes
BS 9300 C377-378:1971 Detail specifications for silicon coaxial mixer diodes
24/30490678 DC BS IEC 60747-5-18 Semiconductor devices - Part 5-18: Optoelectronic devices - Light emitting diodes - Test method light emitting diodesof the macro photoluminescence for epitaxial wafers of micro light emitting diodes
BS IEC 60747-5-11:2019 Semiconductor devices. Optoelectronic devices. Light emitting diodes. Test method of radiative and nonradiative currents of light emitting diodes
BS E9375:1975 Specification - Harmonized system of quality assessment for electronic components - Blank detail specification: voltage regulator diodes and voltage reference diodes excluding precision-voltage temperature-compensated reference diodes
BS EN 62931:2017 GX16t-5 capped tubular LED lamp - Safety specifications
BS 9300 C776-777:1971 Detail specification for germanium coaxial mixer diodes
BS 9300 C476:1973 Detail specification for silicon avalanche rectifier diode
BS 9300 C667-668:1971 Detail specification for silicon avalanche rectifier diodes
BS 9300 C762:1971 Detail specification for mixer diodes for use at X-band frequencies
BS EN 60747-2:2016 Semiconductor devices. Discrete devices. Rectifier diodes
BS 9300 C762:1980 Detail specification for mixer diodes for use at X-band frequencies
BS IEC 60747-4:2008 Semiconductor devices - Discrete devices - Microwave diodes and transistors

Defense Logistics Agency

DLA MIL-L-376 C-1983 LEAD DIOXIDE, TECHNICAL
DLA MIL-L-376 C (1)-1994 LEAD DIOXIDE, TECHNICAL
DLA MIL-L-376 C NOTICE 1-1998 LEAD DIOXIDE, TECHNICAL
DLA MIL-PRF-19500/735-2006 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS
DLA DSCC-DWG-91011 REV B-2003 SEMICONDUCTOR DEVICE, DIODE, ULTRA FAST
DLA MIL-PRF-19500/681 C-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/656 A-2008 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS
DLA MIL-S-19500/236 A VALID NOTICE 3-2011 Semiconductor Device, Diode, Silicon Type 1N31
DLA MIL-PRF-19500/187 B (1)-2012 SEMICONDUCTOR DIODE, DILICON, HIGH-VOLTAGE TYPE JAN1N2361
DLA MIL-S-19500/298 VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon Type 1N1742A
DLA MIL-S-19500/229 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N830AM (Navy)
DLA DSCC-DWG-94022 REV G-2000 SEMICONDUCTOR DEVICE, DIODE, STANDARD RECOVERY
DLA MIL-PRF-19500/730 A-2011 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/227 VALID NOTICE 3-2011 Semiconductor Device, Diode, Type 1N995M (Navy)
DLA MIL-PRF-19500/730 B-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-S-19500/191 A (1)-1971 SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, MIXER TYPE 1N263
DLA MIL-PRF-19500/608 D-2009 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL-PRF-19500/608 D (1)-2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
DLA MIL PRF 19500/670A VALID NOTICE 2-2013 SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

Japan Electronics and Information Technology Industries Association

EIAJ ED 4910-1995 Light Emitting Diodes

JP-JEITA

JEITA ED4912-2008 Light emitting diodes

Association Francaise de Normalisation

NF C96-832:1981 Semiconductors. Microwave diodes. Schottky diodes. General requirements.
NF C93-120-001*NF EN 120001:1992 Blank detail specification : light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
NF EN 120001:1992 Particular framework specification: light-emitting diodes, light-emitting diode arrays, light-emitting diode displays without resistance or internal logic circuits
NF EN 120002:1992 Particular framework specification: infrared emitting diodes, networks of infrared emitting diodes
NF C93-120-002*NF EN 120002:1992 Blank Detail Specification : Infrared emitting diodes, infrared emitting diode arrays
NF EN 120005:1992 Special frame specification: photodiodes, photodiode arrays (Not intended for optical fiber applications}
NF C93-871:1987 Digital transmitters with light emitting diodes.
NF C93-120-005*NF EN 120005:1992 Blank detail specification : photodiodes, photodiode arrays (not intended for fibre optic applications)
NF C86-502:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Infrared emitting diodes, infrared emitting diodes arrays.
NF C86-508:1993 Blank detail specification. Light emitting diodes and infrared emitting diodes for fibre optic system or sub-system.
NF C86-501:1983 Harmonized system of quality assessment for electronic components. Blank detail specification. Light emitting diodes, light emitting diode arrays.
NF C86-818/A1:1981 Rectifier diodes at specified ambient temperature
NF C96-821:1981 Semiconductor Devices High Power rectifier diodes
NF C93-872:1987 Digital receivers with pin photodiode.
NF C86-815:1981 Harmonised system of quality assessment for electronic components. Blank detail specification : voltage regulator diodes and voltage reference diodes.
NF C57-379*NF EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test
NF EN 62979:2017 Photovoltaic modules - Bypass diode - Thermal runaway test

Danish Standards Foundation

DS/IEC 747-3-2:1987 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes. Section 2: Blank detail specification for voltage regulator diodes and voltage reference diodes, excluding temperature compensated precision refere di
DS/IEC 747-3:1986 Semiconductor devices. Discrete devices. Part 3: Signal (including switching) and regulator diodes
DS/IEC 747-3-1:1987 Semiconductor devices - Discrete devices - Part 3: Signal (including switching) and regulator diodes - Section 1: Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
DS/IEC 747-2-1:1990 Semiconductor devices. Discrete devices. Part 2: Rectifier diodes. Section one: Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, up to 100 A

ES-UNE

UNE-EN 120001:1992 BDS: LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS, LIGHT EMITTING DIODE DISPLAYS WITHOUT INTERNAL LOGIC AND RESISTOR. (Endorsed by AENOR in September of 1996.)
UNE-EN 120002:1992 Blank Detail Specification: Infrared emitting diodes, infrared emitting diode arrays
UNE-EN 120005:1992 BDS: PHOTODIODES, PHOTODIODE ARRAYS (NOT INTENDED FOR FIBRE OPTIC APPLICATIONS). (Endorsed by AENOR in September of 1996.)
UNE-EN 120008:1993 BDS: LIGHT EMITTING DIODES AND INFRARED EMITTING DIODES FOR FIBRE OPTIC SYSTEM OR SUB-SYSTEM. (Endorsed by AENOR in September of 1996.)
UNE-EN 120006:1992 BDS: PIN-PHOTODIODES FOR FIBRE OPTIC APPLICATIONS. (Endorsed by AENOR in September of 1996.)
UNE-EN 62979:2017 Photovoltaic module - Bypass diode - Thermal runaway test (Endorsed by Asociación Española de Normalización in October of 2018.)

IECQ - IEC: Quality Assessment System for Electronic Components

PQC 105-1992 Blank Detail Specification for Light Emitting Diodes@ Light Emitting Diode Arrays
PQC 75-1991 Semiconductor Devices - Discrete Devices - Rectifier Diodes Blank Detail Specification: Rectifier Diodes (Including Avalanche Rectifier Diodes)@ Ambient and Case-Rated@ Greater Than 100 A
QC 750101-1986 Semiconductor Devices Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes@ Section One - Blank Detail Specification for Signal Diodes@ Switching Diodes and Controlled-Avalanche Diodes (IEC 747-3-1 ED 1)
QC 750105-1986 Semiconductor Devices; Discrete Devices Part 3: Signal (Including Switching) and Regulator Diodes Section Two-Blank Detail Specification for Voltage-Regulator Diodes and Voltage-Reference Diodes@ Exluding Temperature-Compensated Precision Ref. Diodes (IEC
QC 750101/GB 0001 ISSUE 1-1990 Silicon Ambient Rated High Speed Switching Diode in Plastic Encapsulation

German Institute for Standardization

DIN IEC 60747-3:1992 Semiconductor devices; discrete devices; part 3: signal diodes and regulator diodes; identical with IEC 60747-3:1985
DIN EN 120001:1993-06 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120002:1997-02 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays; German version EN 120002:1992
DIN EN 120005:1996 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992
DIN EN 120001:1993 Blank detail specification: light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor; German version EN 120001:1992
DIN EN 120002:1997 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays; German version EN 120002:1992
DIN EN 120005:1996-11 Blank detail specification - Photodiodes, photodiode-arrays (not intended for fibre optic applications); German version EN 120005:1992

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE 256-1963 SEMICONDUCTOR DIODES
IEEE 503-1978 STANDARD FOR MEASUREMENT AND CHARACTERIZATION OF DIODE-TYPE CAMERA TUBES

U.S. Military Regulations and Norms

ARMY MIL-PRF-49169B-1999 LIGHT-EMITTING DIODE ARRAY
ARMY MIL-PRF-49169 B-1999 LIGHT-EMITTING DIODE ARRAY
ARMY MIL-PRF-49169 B VALID NOTICE 1-2013 Light-Emitting Diode Array
ARMY MIL-N-63400 (2)-1988 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-N-63400 NOTICE 1-1997 NETWORKS, CAPACITOR-RESISTOR
ARMY MIL-C-48487 C-1995 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C REINST NOTICE 2-1996 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-C-48487 C NOTICE 3-1997 CIRCUIT CARD ASSEMBLY - LAMP DIODES
ARMY MIL-PRF-32243-2009 LIGHT EMITTING DIODE (LED) MILITARY DRIVING HEADLAMP

Lithuanian Standards Office

LST EN 120001-2001 Blank detail specification. Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
LST EN 120002-2001 Blank detail specification. Infrared emitting diodes, infrared emitting diode arrays
LST EN 120005-2001 Blank detail specification. Photodiodes, photodiode-arrays (not intended for fibre optic applications)

SE-SIS

SIS SS-CECC 20001-1991 Blank detail specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
SIS SS CECC 20002-1984 Blank detail specification: Infrared emitting diodes, infrared emitting diode arrays
SIS SS CECC 20005-1988 Blank detail specification: Photodiodes, photodiode-arrays (not intended for fibre optic aoolications)
SIS SS-CECC 50009-1991 Blank detail specification:Case-rated rectifier diodes

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

JEDEC JESD211-2009 Zener and Voltage Regulator Diode Rating Verification and Characterization Testing
JEDEC JESD381A-1992 Method of Diode “Q” Measurement
JEDEC JESD307-1992 Voltage Regulator Diode Noise Voltage Measurement
JEDEC JESD320-A-1992 Conditions for Measurement of Diode Static Parameters [Superseded: JEDEC EIA-302, JEDEC 302]
JEDEC JESD282B.01-2002 Silicon Rectifier Diodes Revision of EIA-JESD282-B

SCC

DANSK DS/EN 120001:2016 Blank Detail Specification: Light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
DANSK DS/EN 120002:2016 Blank Detail Specification: Infrared emitting diodes, infrared emitting diode arrays
NACE SP0575-2022 Internal Cathodic Protection (CP) Systems in Oil-Treating Vessels
DANSK DS/EN 120005:2016 Blank Detail Specification: Photodiodes, photodiode arrays (not intended for fibre optic applications)
BS 9300 C397-403:1971 Detail specification for silicon variable capacitance diodes
BS QC 750001:1986 Specification for harmonized system of quality assessment for electronic components. Semiconductor discrete devices. Blank detail specification. Signal diodes, switching diodes and controlled avalanche diodes
MIL MIL-PRF-19500/735C-2020 Diode, Silicon, Schottky, Dual, Center Tap, Type 1N7041CCU1 and Single Diode Type 1N7045T3, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/735B-2015 Diode, Silicon, Schottky, Dual, Center Tap, Type 1N7041CCU1 and Single Diode Type 1N7045T3, JAN, JANTX, JANTXV, and JANS
BS 9300 C155-168:1971 Detail specifications for silicon voltage-regulator diodes
MIL MIL-PRF-19500/620D-2001 SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, TECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N822US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC (SUPERSEDING MIL-PRF-19500/620C) (S/S BY MIL-PRF-19500/620E)
DIN EN 120008:1995 Blank detail specification: Light emitting diodes and infrared emitting diodes for fibre optic system or sub-system; German version EN 120008:1993
MIL MIL-PRF-19500/735A-2009 Diode, Silicon, Schottky, Dual, Center Tap, Type 1N7041CCU1 and Single Diode Type 1N7045T3, JAN, JANTX, JANTXV, and JANS
10/30231573 DC BS EN 60747-3. Semiconductor devices. Part 3. Signal (including switching diodes) and regulator diodes
MIL MIL-S-19500/352-1966 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
MIL MIL-S-19500/298-1964 SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N1742A
MIL MIL-PRF-32243A-2019 Light Emitting Diode (LED) Military Driving Headlamp
CSA C865.2-2023 Light-emitting diode drivers — Performance characteristics
MIL MIL-PRF-49169B-1999 LIGHT-EMITTING DIODE ARRAY (SUPERSEDING MIL-L-49169A)
MIL MIL-PRF-32243-2009 Light Emitting Diode (LED) Military Driving Headlamp
BS 9300 C556-563:1971 Detail specifications for silicon power rectifier diodes
DIN EN 60747-3 E:2010 Draft Document - Semiconductor devices - Part 3: Signal (including switching diodes) and regulator diodes (IEC 47E/395/CD:2010)
BS 9300 C564-571:1971 Detail specifications for silicon power rectifier diodes
CAN/ULC-S8752-2012 STANDARD FOR ORGANIC LIGHT EMITTING DIODE (OLED)PANELS
CAN/ULC S8752-2012 Standard for Organic Light Emitting Diode (LED) Panels
BS 9300 C572-579:1971 Detail specifications for silicon power rectifier diodes
BS CECC 20001:1983 Specification for harmonized system of quality assessment for electronic components. Blank detail specification: light emitting diodes, light emitting diode arrays
MIL MIL-PRF-19500/735-2006 SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS
MIL MIL-S-19500/227-1962 SEMICONDUCTOR DEVICE, DIODE, TYPE 1N995M (NAVY)
MIL MIL-S-19500/229-1962 SEMICONDUCTOR DEVICE, DIODE, TYPE 1N830AM (NAVY)
MIL MIL-PRF-19500/761B-2020 Diode, Silicon, Schottky, Type 1N7069T1, JAN, JANTX, JANTXV, and JANS
MIL MIL-PRF-19500/761-2010 Diode, Silicon, Schottky, Type 1N7069T1, JAN, JANTX, JANTXV, and JANS
CSA C865.1-2023 Pilotes de diodes électroluminescentes — méthodes de mesure

European Standard for Electrical and Electronic Components

EN 120002:1992 Blank detail specification: infrared emitting diodes, infrared emitting diode arrays
EN 120005:1992 Blank detail specification: photodiodes, photodiode-arrays (not intended for fibre optic applications)
EN 120001:1992 Blank detail specification; light emitting diodes, light emitting diode arrays, light emitting diode displays without internal logic and resistor
CECC 50 008- 004 Ambient Rated Rectifier Diode (En)
CECC 50 008- 005 Ambient Rated Rectifier Diode (En)
EN 150009:1992 Blank detail specification: case-rated rectifier diodes
CECC 50 001- 026 ISSUE 3-1994 NL-CECC 50 001-26; Signal Diodes Type Number: BA314 (En)

Japanese Industrial Standards Committee (JISC)

JIS C 7035:1985 Light emitting diodes (for indication)
JIS C 8152-2:2012 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines
JIS C 5942:2010 General rules of laser diodes used for recording and playback
JIS C 5942:1997 General rules of laser diodes used for recording and playback
JIS C 8152-2 AMD 1:2014 Photometry of white light emitting diode for general lighting -- Part 2: LED modules and LED light engines (Amendment 1)
JIS C 8152-1:2012 Photometry of white light emitting diode for general lighting -- Part 1: LED packages
JIS C 5943:2010 Measuring methods of laser diodes used for recording and playback
JIS C 5943:1997 Measuring methods of laser diodes used for recording and playback
JIS C 5990:1997 General rules of photodiodes for fiber optic transmission
JIS C 7223:1978 Reliability assured voltage regulator diodes and voltage reference diodes
JIS C 5950:1997 General rules of light emitting diodes for fiber optic transmission
JIS C 7031:1993 Measuring methods for small signal diodes
JIS C 5940:1997 General rules of laser diodes for fiber optic transmission
JIS C 7036:1985 Measuring methods for light emitting diodes (for indication)
JIS C 7221:1978 Reliability assured small signal diodes
JIS C 7033:1975 Testing methods for semiconductor rectifier diodes
JIS C 5991:1997 Measuring methods of photodiodes for fiber optic transmission

TH-TISI

TIS 1970-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section one-blank detail specification for signal diodes,switching diodes and controlled-avalanchediodes
TIS 1971-2000 Semiconductor devices discrete devices part 3:signal (including switching)and regulator diodes section two-blank detail specification for voltage-regulator diodes and voltage-reference diodes,excluding temperature-compensated precision reference diodes
TIS 1596-1999 Semiconductor devices.discrete devices.part 2: rectifier diodes section 2: blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100 a

RU-GOST R

GOST R 54814-2011 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
GOST R 54814-2018 Light emitted diodes and light emitting diode modules for general application. Terms and definitions
GOST 21011.1-1976 High-voltage kenotrons. The anode current measurement method
GOST 17465-1980 Semiconductor diodes. Basic parameters
GOST 28625-1990 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes. Section 2. Blank detail specification for voltage-regulator diodes and voltage-reference diodes, excluding temperature-compensated precision reference diod
GOST R 51106-1997 Lazers injection, lazer heads, lazers diodes matices, lazers diodes. Methods for measurement of parameters
GOST 18986.10-1974 Semiconductor diodes. Methods for measuring inductance
GOST 20693-1975 Hign-voltage kenotrons. Terms and definitions
GOST 21011.2-1976 High-voltage kenotrons. The anode current measurement method within the voltage pulse
GOST 18986.4-1973 Semiconductor diodes. Methods for measuring capacitance
GOST 18986.6-1973 Semiconductor diodes. Method for measuring recovery charge

CZ-CSN

CSN 35 8736-1964 Semiconductor diodes. Measurement of interelectrode capacitanoe
CSN 35 8775-1987 Light-emitting diodes. Noise measurement in forward direction
CSN 35 8732-1964 Semiconductor diodes. Measurement of forward current
CSN 35 8786-1983 Varicaps. Electric parameter measurement methods
CSN IEC 747-2-1:1993 Semiconductor devices. Diskrete devices. Part 2: Rectifier diodes. Section 1 - Blank detail specification for rectifier diodes (including avalanche diodes), ambient and case-rated, up to 100A
CSN 35 8734-1975 Semieonductor devices. Diodcs. Measurement of reverse current.

GOST

GOST R 70998-2023 Injection lasers, laser heads, laser diodes matrices, laser diodes. Parameters system
GOST R 70873-2023 Semiconductor rectifier diodes and poles. Parameters system
GOST R 70743-2023 Varicaps. Parameter system
GOST R 70870-2023 High-voltage kenotrons. Parameters system
GOST R 70999-2023 Semiconductor diodes. Parameters system
GOST R 70744-2023 Semiconductor tunnel diodes. Parameter system
GOST R 71081-2023 Microwave semiconductor diodes. Parameters system

YU-JUS

JUS N.R1.421-1979 Rectffiar diodes. Measuring methods
JUS A.A4.302-1990 Tabular layouts ofarticle characteristics for semiconductor diodes
JUS N.R1.374-1980 Semiconductor diodes. Essentialratings and chdracteristics. Ttmneldiodes
JUS N.R1.375-1980 Semiconductor diode s. Essential ratings and characteristics. Variable capacitance diodes
JUS N.R1.372-1979 Semiconductor diodes. Essential ratmgs and characteristics: rectifier diodes
JUS N.R1.422-1980 Low-power signal di ode?. Measuring methods
JUS N.R1.321-1979 Terms and definitions for semiconductor devices. Diodes

International Commission on Illumination (CIE)

CIE 127-1997 Measurement of LEDs

PL-PKN

PN T04804-1967 Low-power elec?ronic ?ubes Electrical ?es?s of yacuum diodes
PN T01010 ArkusZ05-1974 Electronic tubes Vacuum diodes Terms and definitions
PN T01504-67-1987 Diodes Measuring methods Series equivalent resistance
PN T01504-61-1987 Diodes Measuring methods Recovered charge Q,

RO-ASRO

STAS 7128/7-1986 LETTER SYMBOLS FOR SEMICONDUCTOR DEVICES AND INTEGRATED C1RCUITS Symbols for variable capacitance diodes and mixer diodes
STAS 12123/3-1983 Semiconductor devices VOLTAGE REFERENCE DIODES AND VOLTAGE REGULATOR DIODES Measuring methodes for electrical characteristics
STAS 12123/2-1983 Semiconductor devices LOW POWER SIGNAL DIODES, INCLUDING SWITCHING DIODES Measuring methods for electrical characteristics

AIA/NAS - Aerospace Industries Association of America Inc.

NAS717-1963 Semiconductor Diodes (Rev 1)

PT-IPQ

NP 3234-2-1987 Electronic originals. Electroluminescent diodes. Electroluminescent diode matrix, detailed specifications
NP 3234-3-1987 Electronic originals. Infrared emitting diodes. Infrared emitting diode matrix, detailed specifications

Underwriters Laboratories (UL)

UL 8752-2018 Organic light emitting diode (OLED) panels
UL 8752-2012 Organic light emitting diode (OLED) panels
UL SUBJECT 8752-2011 Outline of Investigation for Organic Light Emitting Diode(Oled) Panels

United States Navy

NAVY A-A-59781-2005 LIGHT EMITTING DIODES FOR USE AS INDICATOR LIGHTS

Indonesia Standards

SNI 7397-2008 LED (Light Emmiting Diode) signal lamps on the trains

Institute of Electrical and Electronics Engineers (IEEE)

IEEE No 256-1963 IEEE Test Procedure for Semiconductor Diodes

National Aeronautics and Space Administration (NASA)

NASA-TM-73726-1977 Two phase choke flow in tubes with very large L/D

CENELEC - European Committee for Electrotechnical Standardization

EN 120008:1993 Blank Detail Specification: Light Emitting Diodes and Infrared Emitting Diodes for Fibre Optic System or Sub-System
EN 150006:1991 Blank Detail Specification: Variable Capacitance Diodes

(U.S.) Telecommunications Industries Association

TIA-455-130-2007(2014) Elevated Temperature Life Test for Laser Diodes
TIA-455-130-2001 Elevated Temperature Life Test for Laser Diodes

Society of Automotive Engineers (SAE)

SAE ARP6253-2011 LEDs and Aircraft Applications
SAE ARP5873-2007 LED Passenger Reading Light Assembly
SAE J1889-2011 L.E.D. Signal and Marking Lighting Devices

SAE - SAE International

SAE ARP6253A-2017 LEDs and Aircraft Applications

GSO

GSO IEC 60747-3:2014 Semiconductor devices - Part 3: Discrete devices: Signal, switching and regulator diodes
BH GSO IEC 62979:2022 Photovoltaic modules - Bypass diode - Thermal runaway test

National Association of Corrosion Engineers (NACE)

NACE SP0575-2007 Internal Cathodic Protection (CP) Systems in Oil-Treating Vessels Item No. 21015
NACE SP0575-1995 Internal Cathodic Protection (CP) Systems in Oil-Treating Vessels (Item No. 21015)

Canadian Standards Association (CSA)

CAN/CSA-C22.2 NO.250.13-2014 Appareillages à diodes électroluminescentes (DEL) pour applications d’éclairage (deuxième édition)
CAN/CSA-E61965-2004 Mechanical Safety of Cathode Ray Tubes (Second Edition)