Conductors and Electrical Appliances

Conductors and Electrical Appliances, Total:289 items.

The international standard classification for "Conductors and Electrical Appliances" includes: Power stations in general , Rectifiers. Convertors. Stabilized power supply , Other methods of testing of metals , Semiconductor devices , Electrical engineering (Vocabularies) , Cryogenic vessels , Other semiconductor devices , Integrated circuits. Microelectronics , Semiconductor devices in general , Plug-and-socket devices. Connectors , Measurement of force, weight and pressure , Other electromechanical components , Optoelectronics. Laser equipment , Other electrical accessories .

The Chinese standard classification for "Conductors and Electrical Appliances" includes: Power transmission and transformation engineering , Power semiconductor device and parts , Basic standards and general methods , Semiconductor integrated circuit , Packaging material and container , Microcircuit in general , Optoelectronic device assembly , Technical management , Technical management , Technical management , Technical management , Transformer , Industrial automation and control device in general , Laser device .

Taiwan Provincial Standard of the People's Republic of China

CNS 7011-1981 Numbering of Electrodes in Multiple Electrode Semiconductor Devices and Designation of Units in Multiple Unit Semiconductor Devices
CNS 11816-1987 Markings and Arrangements of Mainconnections and Small-Wiring for Marine Use
CNS 11900-1987 Fixed Ceramic Capacitors for Electronic Equipment (Semiconductor)
CNS 11794-1986 Minimum Length Between the Cable Entrances and the Terminals of Electric Machinery and Equipment for Marine Use

Professional Standard - Electricity

DL/T 2602-2023 Selection and test guidelines for protective apparatus of electric DC power system
DL/T 5222-2021 Code for design of the conductor and electrical equipment selection
DL/T 2269-2021 Guide to determining of replacement and reuse for distribution transformer
DL/T 2000-2019 Guide for on-site united partial discharge measurement for 1000kV main transformer with voltage regulating and compensating transformer
DL/T 5222-2005 Design technical rule for selecting conductor and electrical equi
DL/T 1560-2016 Guidelines of onsite assembly and test for disassembly transportation power transformer

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China

GB/T 2900.32-1994 Electrotechnical terminology - Power semiconductor device
GB/T 13422-2013 Semiconductor converters—Electrical test methods
GB/T 31481-2015 Guidance for gas/materials compatibility of cryogenic vessels
GB 7085-1986 Detail specification for electronic component--Semiconductor integrated circuit--CJ0450 Dual peripheral positive AND drivers
GB/T 8446.1-1987 Heat sink for power semiconductor device
GB 12565-1990 Sectional Specification for Semiconductor Devices and Optoelectronic Devices
GB/T 10236-1988 Guide for evaluation of interference effects and compatibility technology between semiconductor convertors and power supply systen
GB 15651.4-2017 Semiconductor devices Discrete devices Part 5-4: Optoelectronic devices Semiconductor lasers
GB/T 13422-1992 Power semiconductor converters－Electrical test methods
GB/T 31522-2015 Matrix to superconductor volume ratio measurement―Copper to non-copper volume ratio of Nb 3Sn composite superconducting wires
GB/T 17950-2000 Semiconductor converter - Part 6: Application guide for the protection of semiconductor converters against overcurrent by fuses
GB/T 2900.66-2004 Electrotechnical terminology - Semiconductor devices and integrated circuits
GB/T 32817-2016 Semiconductor devices - Micro-electromechanical devices - Generic specification for MEMS
GB/T 15651.5-2024 Semiconductor devices—Part 5-5: Optoelectronic devices—Photocouplers
GB/T 3859.3-1993 Semiconductor convertors—Transformers and reactors
GB/T 10236-2006 Guide for compatibility and protection of interference effects between semiconductor convertors and power supply system
GB/T 42836-2023 Microwave semiconductor integrated circuits—Frequency mixer
GB/T 42837-2023 Microwave semiconductor integrated circuits—Amplifier

Professional Standard - Hydroelectric Power

SDGJ 14-1986 Design technical regulations for selecting conductor and electrical equipment

Military Standard of the People's Republic of China-General Armament Department

GJB/Z 41.3-1993 Military semiconductor discrete device series spectrum semiconductor optoelectronic devices
GJB 5018-2001 General requirements for screening and acceptance of semiconductor optoelectronic devices
GJB 33/17-2011 Semiconductor optoelectronic device.Detail specification for type GO11 semiconductor photocoupler
GJB 597/2A-1994 Detailed specifications for semiconductor integrated circuit CMOS AND gates and NAND gates
GJB 33/16-2011 Semiconductor optoelectronic device.Detail specification for type 3DU32 semiconductor phototransistor
GJB 8119-2013 General specification for semiconductor optoelectronic device
GJB 9793-2020 Specification for surface-coated core-shell powders for conductive and electromagnetic shielding purposes
GJB/Z 42.3-1993 Military microcircuit series type spectrum semiconductor integrated circuit microcomputer and memory integrated circuit

Professional Standard - Electron

SJ 2247-1982 Outlines dimension for semiconductor optoelectronic devices
SJ/T 2215-2015 Measuring methods for semiconductor photocouplers
SJ/T 10824-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2010 HTL Quad 2-input positive-NAND gate
SJ/T 10820-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2001 HTL dual 4-input positive-NAND gate
SJ/T 10822-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2008 HTL dual 4-input positive-NAND gate
SJ/T 10828-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CJ0452 HTL dual peripheral positive NAND drivers
SJ/T 10849-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CE10121 ECL4-channel 3-3-3-3 input AND-OR/OR-NAND gate (Applicable for certification)
SJ 50597.3-1994 Detail specification for types JH009 and JH2010 HTL NAND gate of semiconductor integrated circuits
SJ/T 10848-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CE10117 ECL dual 2-channel 2-3-input AND-OR/OR-NAND gate (Applicable for certification)
SJ 2555-1984 Technical guidelines designing and applications of shock and vibration isolators for equipment electronic
SJ/T 10826-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CJ0450 HTL dual peripheral positive AND drivers
SJ/T 10816-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1040 TTL dual 4-input positive-NAND buffer (Applicable for certification)
SJ/T 10823-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CH2009 HTL triple 3-input positive-NAND gate
SJ/T 10042-1991 Detail specification for electronic components.Semiconductor integrated circuit.CT54LS00/CT74LS00 quadruple 2-input positive-NAND gate
SJ/T 10827-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CJ0451 HTL dual peripheral positive AND drivers
SJ/T 10815-1996 Detailed specifications for electronic components - Semiconductor integrated circuits - CT1030 TTL8 input positive-NAND gate (Applicable for certification)
SJ/T 10084-1991 Detail specification for electronic components. Semiconductor integrated circuit CT54H20/CT74H20 dual 4-input positive-NAND gate

Professional Standard - Aerospace

QJ 3297-2008 General Specification for Distributors of Missle and Launch Vehicle
QJ 3092-1999 Detailed Specifications for Semiconductor Integrated Circuit HCT or Gate or Not Gate

Professional Standard - Machinery

JB/T 7483-1994 Semiconductor resistance strain sensor
JB/T 10097-2000 Case for power semiconductor device
JB/T 10096-1999 Selection Guidance of Case for Power Semiconductor Device
JB/T 7061-1993 Silicon Wafers Intended to Be Used in Power Semiconductor Devices
JB/T 10501-2005 Ceramic parts of case for power semiconductor devices
JB/T 9684-2000 Selecting guide of heat sink for power semiconductor device
JB/T 8757-1998 Hot Pipe Radiators Intended to be Used in Power Semiconductor Devices
JB/T 5844-1991 Directional relays and power relays with two input energizing quantities (IEC 60255-12: 1980 NEQ)
JB/T 5843-2005 Connectors for power semiconductor devices
JB/T 9687.2-1999 Tungsten disk for power semiconductor devices
JB/T 4277-1996 Packing of Power Semiconductor Parts
JB/T 7063-1993 Rated Voltage and Current of Power Semiconductor Devices
JB/T 5843-1991 Connectors for Power Semiconductor Devices
JB/T 10096-2000 Selection guidance of case for power semiconductor device
JB/T 7483-2005 Semiconductor resistance strain gauge force stransducer/sensor
JB/T 10097-1999 Cases for Power Semiconductor Devices
JB/T 9687.1-1999 Molybdenum Disk for Power Semiconductor Devices
JB/T 9644-1999 Reactor for semiconductor electric drive

中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

GB/T 15651.4-2017 Semiconductor devices-Discrete devices-Part 5-4:Optoelectronic devices-Semiconductor lasers

国家机械工业局

JB 9644-1999 Reactor for semiconductor electric transmission

未注明发布机构

DIN 41772 Beiblatt 2:1979 Static power convertors; semiconductor rectifier equipment, examples of characteristic curves for equipment operating in parallel with batteries

Group Standards of the People's Republic of China

T/CEEIA 301-2018 The selection and use of guidelines of low-voltage device for isolation and fuses
T/CSEE 0157-2020 Guidelines for Operation and Maintenance of 1000kV Transformers in Power Plants

机械电子工业部

JB 5843-1991 Connectors for power semiconductor devices

国家市场监督管理总局、中国国家标准化管理委员会

GB/T 8446.1-2022 Heat sinks for power semiconductor devices—Part 1: Radiators

Professional Standard - Building Materials

JC/T 2778-2023 Test method for conductivity of solid electrolyte for gas sensors

SCC

BS IEC 60747-7:2000 Discrete semiconductor devices and integrated circuits-Bipolar transistors
DIN IEC 60747-10:1987 Semiconductor devices; generic specification for semiconductor devices and integrated circuits; identical with IEC 60747-10, edition 1984
BS IEC 60747-14-3:2001 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-Pressure sensors
UNE-EN 61788-5:2002 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors.
CEI EN 61788-5:2014 Superconductivity Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
BS PD CEN ISO/TR 9241-308:2015 Ergonomics of human-system interaction-Surface-conducting electron-emitter displays (SED)
DANSK DS/EN 61788-5:2013 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
AENOR UNE-EN 61788-5:2002 Superconductivity. Part 5: Measurement of the ratio between matrix and superconductor volumes. Relationship between copper and superconductor volumes of Cu/Nb-Ti composite superconductors.
BS IEC 60747-14-1:2000 Discrete semiconductor devices and integrated circuits. Semiconductor devices. Semiconductor sensors-General and classification-Sensor generals and classification for semiconductor sensors
BS 3839:1965 Oxygen free high conductivity copper for electronic tubes and semiconductor devices
DANSK DS/EN 61788-12:2013 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
CEI EN 61788-12:2014 Superconductivity Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
DIN EN 61788-5 E:2011 Draft Document - Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductor (IEC 90/272/CD:2011)
UNE-EN 61788-12:2004 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
CEI EN 62047-15:2016 Semiconductor devices - Micro-electromechanical devices Part 15: Test method of bonding strength between PDMS and glass
BS EN 60747-5-5:2011+A1:2015 Semiconductor devices. Discrete devices-Optoelectronic devices. Photocouplers
DANSK DS/EN 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
CEI EN 62047-15/AB:2016 Semiconductor devices - Micro-electromechanical devices Part 15: Test method of bonding strength between PDMS and glass
AS 1955.2:1978 Semiconductor convertors - Semiconductor self-commutated convertors
AENOR UNE-EN 61788-12:2004 Superconductivity. Part 12: Measurement of the ratio between matrix and superconductor volumes. Relationship between volumes of copper and the rest of the superconducting wires composed of Nb3Sn.
DANSK DS/EN IEC 60747-5-5:2020 Semiconductor devices – Part 5-5: Optoelectronic devices – Photocouplers
CEI EN IEC 60747-5-5:2021 Semiconductor devices Part 5-5: Optoelectronic devices - Photocouplers
CEI EN 62415:2011 Semiconductor devices - Constant current electromigration test
DANSK DS/EN IEC 63244-1:2021 Semiconductor devices – Semiconductor devices for wireless power transfer and charging – Part 1: General requirements and specifications
CEI EN IEC 63244-1:2022 Semiconductor devices - Semiconductor devices for wireless power transfer and charging Part 1: General requirements and specifications
CSA C57-1998(R2015) Electric Power Connectors for Use in Overhead Line Conductors
DANSK DS/EN 62415:2010 Semiconductor devices - Constant current electromigration test
BS 3363:1961 Schedule of letter symbols for light-current semiconductor devices
DANSK DS/EN 62047-19:2013 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
MIL MIL-DTL-24231/19E-2013 Connector, Single Cable, Type III, 65-Conductor
CEI EN 62047-19:2014 Semiconductor devices - Micro-electromechanical devices Part 19: Electronic compasses
AS 2547.1.5:1986 Semiconductor devices, Part 1.5: Discrete devices - Optoelectronic devices
DIN EN 61788-12 E:2011 Draft Document - Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb<(Index)3>Sn composite superconducting wires; (IEC 90/273/CD:2011)

British Standards Institution (BSI)

BS IEC 60747-5-4:2022 Semiconductor devices - Optoelectronic devices. Semiconductor lasers
BS IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Optoelectronic devices - Semiconductor lasers
BS IEC 60747-14-2:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
BS IEC 60747-14-2:2000 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - Hall elements
BS IEC 60747-14-1:2001 Discrete semiconductor devices and integrated circuits - Semiconductor devices - Semiconductor sensors - General and classification - Sensor generals and classification for semiconductor sensors
BS EN IEC 60747-5-5:2020 Semiconductor devices. Optoelectronic devices. Photocouplers
BS IEC 62951-4:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
BS IEC 60747-14-5:2010 Semiconductor devices - Semiconductor sensors - PN-junction semiconductor temperature sensor
BS IEC 62951-6:2019 Semiconductor devices. Flexible and stretchable semiconductor devices - Test method for sheet resistance of flexible conducting films
BS IEC 60747-6:2000 Discrete semiconductor devices and integrated circuits - Thyristors
BS IEC 60747-6:2001 Discrete semiconductor devices and integrated circuits - Thyristors
BS DD IEC/PAS 61338-1-5:2010 Waveguide type dielectric resonators - General information and test conditions - Measurement method of conductivity at interface between conductor layer and dielectric substrate at microwave frequency
BS IEC 60747-14-4:2011 Semiconductor devices. Discrete devices. Semiconductor accelerometers
BS EN 61338-1-5:2015 Waveguide type dielectric resonators. General information and test conditions. Measurement method of conductivity at interface between conductor layer and dielectric substrate at microwave frequency
BS EN 60747-5-5:2011 Semiconductor devices. Discrete devices. Optoelectronic devices. Photocouplers
19/30404095 DC BS EN IEC 60747-5-4. Semiconductor devices. Part 5-4. Optoelectronic devices. Semiconductor lasers
BS EN 61788-4:2016 Superconductivity. Residual resistance ratio measurement. Residual resistance ratio of Nb-Ti and Nb3Sn composite superconductors
BS EN 61788-5:2013 Superconductivity. Matrix to superconductor volume ratio measurement. Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
BS EN 61788-5:2001 Superconductivity - Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors
BS EN 61788-5:2003 Superconductivity - Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors
BS EN 61788-12:2013 Superconductivity. Matrix to superconductor volume ratio measurement. Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
13/30264600 DC BS EN 60747-14-8. Semiconductor devices. Part 14-8. Semiconductor sensors. Capacitive degradation sensor of liquid
BS IEC 60748-11:1991 Semiconductor devices. Integrated circuits. Sectional specification for semiconductor integrated circuits excluding hybrid circuits
BS 6493-2.1:1985 Semiconductor devices - Integrated circuits - General
23/30473272 DC BS IEC 60747-5-4 AMD 1. Semiconductor devices - Part 5-4. Optoelectronic devices. Semiconductor lasers
BS IEC 60748-11:2000 Semiconductor devices - Integrated circuits - Sectional specification for semiconductor integrated circuits excluding hybrid circuits
BS EN 61788-12:2003 Superconductivity - Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
BS EN IEC 62969-1:2018 Semiconductor devices. Semiconductor interface for automotive vehicles. General requirements of power interface for automotive vehicle sensors
BS EN 61788-12:2002 Superconductivity - Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
BS EN 60747-16-1:2002+A2:2017 Semiconductor devices - Microwave integrated circuits. Amplifiers
BS 3839:1978 Specification for oxygen-free high-conductivity copper for electronic tubes and semiconductor devices
BS EN IEC 63244-1:2021 Semiconductor devices. Semiconductor devices for wireless power transfer and charging. General requirements and specifications
BS EN IEC 60747-16-6:2019 Semiconductor devices. Microwave integrated circuits. Frequency multipliers
BS EN 60747-16-3:2002+A2:2017 Semiconductor devices - Microwave integrated circuits. Frequency converters
BS IEC 60748-1:2002 Semiconductor devices - Integrated circuits - General
BS EN 60747-16-1:2002+A1:2007 Semiconductor devices — Part 16-1: Microwave integrated circuits — Amplifiers
BS EN 60747-16-5:2013+A1:2020 Semiconductor devices - Microwave integrated circuits. Oscillators
BS IEC 60747-14-3:2009 Semiconductor devices - Semiconductor sensors - Pressure sensors
BS EN 62415:2010 Semiconductor devices - Constant current electromigration test
BS IEC 62951-1:2017 Semiconductor devices. Flexible and stretchable semiconductor devices - Bending test method for conductive thin films on flexible substrates
BS IEC 62830-7:2021 Semiconductor devices. Semiconductor devices for energy harvesting and generation. Linear sliding mode triboelectric energy harvesting
BS IEC 60747-14-1:2010 Semiconductor devices - Semiconductor sensors - Generic specification for sensors
BS EN 60747-5-1:2001 Discrete semiconductor devices and integrated circuits - Optoelectronic devices - General
BS EN 60747-15:2004 Discrete semiconductor devices. Isolated power semiconductor devices
BS IEC 60747-5-1:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. General
BS EN 60747-5-1:1998 Discrete semiconductor devices and integrated circuits. Optoelectronic devices. General
BS IEC 60748-2:1998 Semiconductor devices. Integrated circuits. Digital integrated circuits
BS IEC 62830-2:2017 Semiconductor devices - Semiconductor devices for energy harvesting and generation. - Part 2: Thermo power based thermoelectric energy harvesting
BS IEC 60748-2:1997 Semiconductor devices - Integrated circuits - Digital integrated circuits
BS EN 62047-19:2013 Semiconductor devices. Micro-electromechanical devices. Electronic compasses
BS IEC 60748-4:1997 Semiconductor devices. Integrated circuits. Interface integrated circuits

Association Francaise de Normalisation

NF C32-018:1993 Conductors for wires and cables with small cross-sectional areas
NF C96-015:2005 Discrete semiconductor devices - Part 15: isolated power semiconductor devices
NF C96-015*NF EN 60747-15:2013 Semiconductor devices - Discrete devices - Part 15 : isolated power semiconductor devices
NF C96-050-7*NF EN 62047-7:2011 Semiconductor devices - Micro-electromechanical devices - Part 7 : MEMS BAW filter and duplexer for radio frequency control and selection
NF C86-010:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Discrete semiconductor devices. Generic specification.
NF C96-017*NF EN 62374:2008 Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
NF C86-503:1986 Semiconductor devices. Harmonized system of quality assessment for electronic components. Phototransistors, photodarlington transistors and phototrasistor-arrays. Blank detail specification CECC 20 003.
NF EN IEC 60747-5-5:2020 Dispositifs à semiconducteurs - Partie 5-5 : dispositifs optoélectroniques - Photocoupleurs
NF C80-201*NF EN 62415:2010 Semiconductor devices - Constant current electromigration test.
NF EN 62415:2010 Dispositifs à semiconducteurs - Essai d'électromigration en courant constant
NF EN 62047-19:2014 Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 19 : compas électroniques

RU-GOST R

GOST 29283-1992 Semiconductor devices. Discrete devices and integrated circuits. Part 5. Optoelectronic devices
GOST 29209-1991 Semiconductor devices. Discrete devices and integrated circuits. Part 2. Rectifire diodes
GOST 29210-1991 Semiconductor devices. Discrete devices. Part 3. Signal (including switching) and regulator diodes
GOST 26284-1984 Semiconductor power converters. Conventional designations
GOST 26567-1985 Semiconductor energy converters. Test methods
GOST 18986.14-1985 Semiconductor diodes. Methods for measuring differential and slope resistances
GOST 13350-1978 SSI conductometric liguid analysers. General specifications

GSO

GSO IEC 60747-15:2014 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
GSO IEC 61788-5:2014 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
OS GSO IEC 61788-5:2014 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
BH GSO IEC 61788-5:2016 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
GSO IEC 60747-5-4:2014 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
OS GSO IEC 60747-5-4:2014 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
BH GSO IEC 60747-5-4:2016 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
OS GSO IEC 61788-12:2014 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
BH GSO IEC 61788-12:2016 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
GSO IEC 61788-12:2014 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
GSO IEC 60747-14-5:2015 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
GSO IEC 62047-19:2021 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
BH GSO IEC 62047-19:2022 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses
BH GSO IEC 60747-5-7:2022 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors
GSO IEC 60747-5-7:2021 Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors

Government Electronic & Information Technology Association

GEIA-STD-0002-1-2005 Aerospace Qualified Electronic Component (AQEC) Requirements, Volume 1 ?Integrated Circuits and Semiconductors

Korean Agency for Technology and Standards (KATS)

KS C IEC 61788-5-2021 Superconductivity－Part 5：Matrix to superconductor volume ratio measurement－Copper to superconductor volume ratio of Cu/Nb－Ti composite superconductors
KS C IEC 61788-5:2016 Superconductivity－Part 5：Matrix to superconductor volume ratio measurement－Copper to superconductor volume ratio of Cu/Nb－Ti composite superconductors
KS C IEC 61788-5-2016(2021) Superconductivity－Part 5：Matrix to superconductor volume ratio measurement－Copper to superconductor volume ratio of Cu/Nb－Ti composite superconductors
KS C IEC 60050-521-2002(2022) Semiconductor devices and integrated circuits
KS C IEC 60050-521-2002(2017) Semiconductor devices and integrated circuits
KS C IEC 60050-521-2022 Semiconductor devices and integrated circuits
KS C IEC 60747-5:2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices

Institute of Electrical and Electronics Engineers (IEEE)

IEEE 444-1973 Practices and requirements for thyristor converters and motor drives; part 1: converters for dc motor armature supplies

KR-KS

KS C IEC 61788-5-2016 Superconductivity－Part 5：Matrix to superconductor volume ratio measurement－Copper to superconductor volume ratio of Cu/Nb－Ti composite superconductors
KS C IEC 60747-5-2020 Semiconductor devices — Discrete devices —Part 5: Optoelectronic devices

Danish Standards Foundation

DS/EN 61788-5:2001 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors
DS/EN 61788-5:2013 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
DS/EN 61788-12:2002 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
DS/EN 61788-12:2013 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
DS/EN 62415:2010 Semiconductor devices - Constant current electromigration test
DS/EN IEC 63244-1:2021 Semiconductor devices – Semiconductor devices for wireless power transfer and charging – Part 1: General requirements and specifications

International Electrotechnical Commission (IEC)

IEC 60747-5-4:2022 Semiconductor devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
IEC 60747-5-4:2006 Semiconductor devices - Discrete devices - Part 5-4: Optoelectronic devices - Semiconductor lasers
IEC 60747-15:2010 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
IEC 60747-15:2003 Discrete semiconductor devices - Part 15: Isolated power semiconductor devices
IEC 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
IEC 62951-4:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 4: Fatigue evaluation for flexible conductive thin film on the substrate for flexible semiconductor devices
IEC 62951-6:2019 Semiconductor devices - Flexible and stretchable semiconductor devices - Part 6: Test method for sheet resistance of flexible conducting films
IEC 60747-14-5:2010 Semiconductor devices - Part 14-5: Semiconductor sensors - PN-junction semiconductor temperature sensor
IEC 62415:2010 Semiconductor devices - Constant current electromigration test
IEC 61788-12:2013 Superconductivity.Part 12: Matrix to superconductor volume ratio measurement.Copper to non-copper volume ratio of Nb<(Index)3>Sn composite superconducting wires
IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
IEC TR 60146-6:1992 Semiconductor convertors - Part 6: Application guide for the protection of semiconductor convertors against overcurrent by fuses
IEC 60747-14-4:2011 Semiconductor devices - Discrete devices - Part 14-4: Semiconductor accelerometers

YU-JUS

JUS N.C0.048-1985 Electrical power and lighting. Testing of insulated conductors and cables. Separability of cores of flat twin insulated conductors

Underwriters Laboratories (UL)

UL 1557-2011 Electrically isolated semiconductor devices
UL 1557-1993 Electrically isolated semiconductor devices
UL 1557-2006 UL Standard for Safety Electrically Isolated Semiconductor Devices Fourth Edition; Reprint with Revisions through and Including 6/26/2006
UL 1557-1997 Electrically isolated semiconductor devices

ES-UNE

UNE-EN 61788-5:2013 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires (Endorsed by AENOR in October of 2013.)
UNE-EN 61788-12:2013 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires (Endorsed by AENOR in November of 2013.)
UNE-EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers (Endorsed by Asociación Española de Normalización in October of 2020.)
UNE-EN 62415:2010 Semiconductor devices - Constant current electromigration test (Endorsed by AENOR in September of 2010.)
UNE-EN 62047-19:2013 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses (Endorsed by AENOR in November of 2013.)

Japanese Industrial Standards Committee (JISC)

JIS H 7304:2002 Superconductivity -- Part 5: Matrix to superconductor volume ratio measurement -- Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors
JIS H 7304:2017 Superconductivity -- Matrix to superconductor volume ratio measurement -- Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires
JIS C 7012:1982 Type designation system for discrete semiconductor devices

Lithuanian Standards Office

LST EN 61788-5-2002 Superconductivity. Part 5: Matrix to superconductor volume ratio measurement. Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors (IEC 61788-5:2000)
LST EN 61788-12-2003 Superconductivity. Part 12: Matrix to superconductor volume ratio measurement. Copper to non-copper volume ratio of Nb3Sn composite superconducting wires (IEC 61788-12:2002)

European Committee for Electrotechnical Standardization（CENELEC）

EN 60747-15:2012 Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
EN 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
EN 61788-12:2013 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
EN 62374:2007 Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films
EN IEC 60747-5-5:2020 Semiconductor devices - Part 5-5: Optoelectronic devices - Photocouplers
EN 61788-5:2013 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement - Copper to superconductor volume ratio of Cu/Nb-Ti composite superconducting wires

CENELEC - European Committee for Electrotechnical Standardization

EN 60747-15:2004 Discrete semiconductor devices Part 15: Isolated power semiconductor devices
EN 61788-12:2002 Superconductivity Part 12: Matrix to superconductor volume ratio measurement - Copper to non-copper volume ratio of Nb3Sn composite superconducting wires
EN 62415:2010 Semiconductor devices - Constant current electromigration test

Indonesia Standards

SNI 04-3580-1994 Requirements of copper and alumunium conductor for electric cable insulation
SNI 19-0429-1989 Guide for sampling of liquid and semi solid materials

DIN

DIN EN 61788-5:2001 Superconductivity - Part 5: Matrix to superconductor volume ratio measurement; Copper to superconductor volume ratio of Cu/Nb-Ti composite superconductors (IEC 61788-5:2000); German version EN 61788-5:2001
DIN EN 61788-12:2003 Superconductivity - Part 12: Matrix to superconductor volume ratio measurement; Copper to non-copper volume ratio of Nb<(Index)3>Sn composite superconducting wires (IEC 61788-12:2002); German version EN 61788-12:2002

ZA-SANS

SANS 6101:2007 Adherence of dielectric to conductor of supporting cores of aerial bundled conductors
SANS 60146-6:1992 Semiconductor convertors Part 6: Application guide for the protection of semiconductor convertors against overcurrent by fuses

German Institute for Standardization

DIN 41772 Beiblatt 2:1979-02 Static power convertors; semiconductor rectifier equipment, examples of characteristic curves for equipment operating in parallel with batteries
DIN EN 62374:2008 Semiconductor devices - Time Dependent Dielectric Breakdown (TDDB) test for gate dielectric films (IEC 62374:2007); German version EN 62374:2007
DIN EN 62415:2010-12 Semiconductor devices - Constant current electromigration test (IEC 62415:2010); German version EN 62415:2010
DIN IEC 60747-11:1992 Semiconductor devices; sectional specification for semiconductor devices; identical with IEC 60747-11:1985
DIN EN 62047-19:2014-04 Semiconductor devices - Micro-electromechanical devices - Part 19: Electronic compasses (IEC 62047-19:2013); German version EN 62047-19:2013

Defense Logistics Agency

DLA MIL-S-19500/230 C VALID NOTICE 4-2011 Semiconductor Device, Diode, Silicon, High-Conductance Type JAN- 1N3207
DLA DSCC-DWG-90025 REV C-2013 SEMICONDUCTOR DEVICE, POWER SWITCHING REGULATOR ASSEMBLY

PH-BPS

PNS IEC 62830-2:2021 Semiconductor devices - Semiconductor devices for energy harvesting and generation - Part 2: Thermo power based thermoelectric energy harvesting

IEEE - The Institute of Electrical and Electronics Engineers@ Inc.

IEEE C37.10-1995 Guide for Diagnostics and Failure Investigation of Power Circuit Breakers

AIA/NAS - Aerospace Industries Association of America Inc.

NAS4121-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Formed
NAS4122-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Extruded
NAS4119-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Press-On Type
NAS4124-1996 Heat Sink@ Electrical- Electronic Component@ Semiconductor Devices@ Dual Link

CZ-CSN

CSN 35 8740-1973 Semiconduotor deviees. Transistore. Measurement of saturation voltage
CSN 35 1609-1983 Power semiconductor devices. Heat sinks. Testing methodo
CSN 35 8701-1975 Terminology of semiconductors and semiconductor devices

American Society for Testing and Materials (ASTM)

ASTM B354-23 Standard Terminology Relating to Uninsulated Metallic Electrical Conductors

PL-PKN

PN T01305-1992 Semiconductor devices. Integrated circuits. Sectional specificatiion for semiconductor integrated circuits excluding hybrid circuits

IPC - Association Connecting Electronics Industries

IPC TM-650 2.5.4.1-1987 Conductor Temperature Rise Due to Current Changes in Conductors
IPC TM-650 2.5.4.1A-1997 Conductor Temperature Rise Due to Current Changes in Conductors

Aerospace Industries Association

AIA NAS 4124-1996 Heat Sink, Electrical- Electronic Component, Semiconductor Devices, Dual Link

TN-INNORPI

NT AB 023-1970 Draden en kabels voor uitrustingen met massieve of verdeelde geleiders, met pvc geisoleerd, onder scherm, met een geleider of een tweedraads- groen.

GOSTR

GOST 18577-1980 Thermoelectric semiconductor devices. Terms and definitions

RO-ASRO

STAS 11381/13-1981 Graphical symbols for electrical diagrams SEMICONDUCTOR DEVICES
STAS 12258/3-1985 Optoelectronic semiconductor devices PHOTOTRANSISTORS Terminology and essential characteristics

TR-TSE

TS 2751-1977 Heat-Resisting (190 C) Electrical Cables With Copper Conductors For Aircraft

(U.S.) Ford Automotive Standards

FORD ESF-M99B155-A-2002 CHEMICAL INK, CONDUCTOR (THICK FILM CONDUCTING PASTE) ***TO BE USED WITH FORD WSS-M99P1111-A***

GOST

GOST R 71070-2023 Electronic semiconductor devices. Terms and definitions

CO-ICONTEC

ICONTEC 2215-1986 Electronics. Conductor and terminal connector for soldering of conductors with copper

ICEA - Insulated Cable Engineers Association Inc.

T-32-645-1993 Establishing Compatibility of Sealed Conductor Filler Compounds with Conducting Stress Control Materials

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