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Database: 365,228(8 Aug 2026)
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GB/T 36477-2018 in English

GB/T 36477-2018 in English

VALID

Semiconductor integrated circuit—Measuring methods for flash memory

  • Issued on:2018-06-07
  • Implemented on:2019-01-01
  • File Format:PDF
  • Delivery:Via email within 1~3 business days
Price(USD): $250.00
$243.00
Standard No: GB/T 36477-2018
Document status: VALID
Title in English: Semiconductor integrated circuit—Measuring methods for flash memory
Title in Chinese: 半导体集成电路 快闪存储器测试方法
Language: English
File Format: Electronic (PDF)
Delivery: Via email within 1~3 business days
Issued on: 2018-06-07
Implemented on: 2019-01-01
ICS Classification: 31.200-Integrated circuits. Microelectronics
Chinese Classification: L56-Semiconductor integrated circuit
Professional Classification: GB-National Standard
Related Keywords: flash memory
flash memory scopethis standard
memory cell functions
circuit measuring methods
memory
Related Topics: memory
testing machine
Integration Test Trials
semiconductor integrated circuit
fast+
flash test
memory circuit
Ways to Speed Up Testing
memory voltage
flash
new semiconductor integration
Semiconductor Test Technology
Integrated Circuit Testing Principles and Methods
Modern IC Testing Technology
flash
GBT36477
GB/T 36477-2018
Semiconductor integrated circuit driving test method
Test method for semiconductor integrated circuit driver
integrated circuit
ferroelectric memory
Rigid body current collector
dds conductivity measurement circuit
Memory function test
Semiconductor integrated circuit chip general
Semiconductor memory country-related
How to store mercury
Overseas integrated circuit testing
Integrated circuit testing related
. Platinum electrode storage method
How to store sodium
How to store conductivity meter electrodes
gb/t 36477-2018

《GB/T 36477-2018半导体集成电路 快闪存储器测试方法》由TC599(全国集成电路标准化技术委员会)归口,主管部门为工业和信息化部(电子)。


Scope

This standard specifies the basic methods for testing electrical parameters, time parameters and memory cell functions of semiconductor integrated circuit flash memory. This standard applies to the testing of electrical parameters, time parameters and memory cell functions of flash memory in the field of semiconductor integrated circuits.

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